a Ol DE 3875081 GE SOLID STATE Standard Power MOSFETs 387508) Oo1a17? 4 T O1E 18177 DB 7-39~/3 RFM18N08, RFM18N10, RFP18N08, RFP18N10 N-Channel Enhancment-Mode Power Field-Effect Transistors 18 A, 80 V 100 Vv Tos(On): 0.10 Features: = SOA is power-dissipation limited a Nanosecond Switching speeds m Linear transfer characteristics = High input impedance m Majority carrier device The RFM18NO8 and RFM18N10 and the RFP18NO8 and RFP18N10* are n-channel! enhancement-mode sillcon-gate Power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The RFM-series types are supplied in the JEDEC To- 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. The RFM and REP series were formerly RCA developmental numbers TA9286 and TA9287, respectively. File Number 1446 s 9209-3378 N-Channel Enhancement Mode TERMINAL DESIGNATIONS RFM18NO08 ORAIN RFMIEN10 SOURCE (FLANGE) @) & GATE 92s-37801 JEDEC TO-204AA RFP18N08 RFP18Ni0 source oS (FLANGE) I O DRAIN tcare TOP VIEW 9205-39526 JEDEC TO-220A8 MAXIMUM RATINGS, Absolute-Maximum Values (Te=25C): RFM18N08 AFM18N10 RFP18N08 RFP18N10 DRAIN-SOURCE VOLTAGE Voss 80 100 80 100 Vv DRAIN-GATE VOLTAGE (Res=1 MQ) Voer 80 100 80 100 Vv GATE-SOURCE VOLTAGE Ves - +20 Vv DRAIN CURRENT RMS Continuous Ib 18 A Pulsed tom 45 A POWER DISSIPATION @ Tc=25C P, 100 100 75 75 Ww Derate above Tc=25C 08 0.8 0.6 0.6 WC OPERATING AND STORAGE TEMPERATURE Ty. Tg | -_________. ~5 to +160 _-________ C G E SOLID STATE OL Dep) 2875081 0018178 & I 3875081 GE SOLID STATE . OT 18178 O S9-/5 Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 ELECTRICAL CHARACTERISTICS Ai Case Temperature (T.) = 25 C unless otherwise specified LIMITS RFM16NO08 REM18N10 TEST RFP18N08 RFP18N10 CHARACTERISTICS SYMBOL CONDITIONS MIN. |MAX.| MIN. | MAX. | UNITS lp = Drain-Source Breakdown Voltage BVoss 1 u 80 _ 100 _ Vv Gs = Ves = Vos Gate Threshold Voitage Vesem 2 4 2 4 Vv lp =1mA Vos = 65 V - 1 - - . Vos = 80 V - - 1 Zero Gate Volt. D Ci t ero Gate Voltage Drain Curren loss Te = 125C uA Vos = 65 V - 50 - - Vos = 80 V - - _ 50 Gate-Source Leakage Current lass Yes = ** v _ 100 _ 100 nA os ~ ; ve a ey |108} | 1.08 Drain-Source On Voltage Vos(on)* ke Vv Ip=18A _ 3.0 _ 4.0 Ves = 10 V . Static Drain-Source On Resistance ros(on)* lb =9A _ 0.10 _ 0.10 a Ves =10V Forward Transconductance On" Vos = 10V 5 - 5 - mho IDp=9A input Capacitance Ciss Vos = 25 V - 1700 _ 1700 Output Capacitance Coss Vas = OV - 750 _ 750 pF Reverse Transfer Capacitance Crs f= 1MHz _ 300 = 300 Turn-On Delay Time ta(on) Voo=50 V 60(typ.)} | 90 | 6O(typ.) | 90 Rise Time t, lo =9A 300(typ.) | 450 | 300(typ.) | 450 ns Turn-Off Delay Time te(off) Roon = Ros = 50 1] 150(typ.) | 225 | 150(typ.) | 225 Fail Time t Ves = 10 V 150(typ.) | 225 | 150(typ.) | 225 ~ RFM18NO08, - 2) - 2 Thermal Resistance ReIC RFM16N10 1.25 1.26 CW Junction-to-Case RFP18NO08, _ 1.67 _ 1.67 RFP18N10 . . *Pulsed: Pulse duration = 300 ws max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS TEST RFM18N08 RFP16N08 CHARACTERISTIC SYMBOL | CONDITIONS RFM18N10 RFPienio _ | UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vsp Isp=9 A _ 1.4 = 1.4 Vv Reverse Recovery Time ty hr tani Alus 150(typ) 150(typ) ns *Pulse Test: Width <= 300 ys, duty cycle < 2%. 121 ee ee : on vel 3875081 0018175 3 Ey 3875081 G SOLID STATE O1E 18179 07-39-13 Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 160 | CASE TEMPERATURE (Tc) = 25 Cc i (CURVES MUST BE DERATED 6] LINEARLY WITH INCREASE IN | TEMPERATURE ) to oS a 5 ii ec a 2 . o z = : & ! Al ' 19 100 tooo ORAIN-TO-SOURCE VOLTAGE (Vpg}-V 92CN- 36/50RAI Fig. 1 Maximum operating areas for ali types. fu iz = | 7 2 Zz 2 & & a o o = w = 6 = oo =F reat . CASE TEMPERATURE (Tc) C SUNCTION {Ty " 92cs-34018 9205-34815 ig. 2 i i . mperature derating curve . : . . Fig. 2 one apse ation vs. case tempera 9 Fig. 3 Typical normalized gate threshold voltage as a function . of junction temperature for ail types. 210 CASE TEMPERATURE PULSE TEST: > PULSE OURATION 80 uS DUTY CYCLE 5 2% Ip=4A Veg 10 NORMALIZED DRAIN-TO SOURCE ON RESISTANCE Posten d z z z w # 5 F z z 7 . . JUNCTION TEMPERATURE (Ty! GATE-TO~SOURCE VOLTAGE {gg)V 925-36180 8208-36148 Fig. 4 - Normalized drain-to-source on resistance to junction tem- Fig. 5 Typical transfer characteristics for all types. perature for all types. 422 _ OO bene cue vere G E SOLID STATE Oo. vel 3475081) 0018180 4 t 3875081 G E SOLID STATE D1e 18180 0 7-39-13 Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 T T, T T 8oss GATE L SOURCE -le 7s VOLTAGE < oo = Yoss Yoo= Yoss i RL= $500 a zor (g{MEF) = 1 mA 45 e 3 Vgg = 10 2 a 1 sl 075 Voss 975 Yoss: a Fob 50 Voss 50 Ypss 4439 9 25 Ypss 0 28 Yoss z g PULSE TEST 28) PULSE DURATION *80uS 42 DUTY CYCLE < 2% CASE TEMPERATURE {Ti DRAIN SOURCE VOLTAGE ea a o tg (REF) fq (REF) 20 80 3 ig (ACT) tq (act) ORAIN~TOSOURCE VOLTAGE {Vp5)V TIME Microneconds s2csaress 9208-35146 Fig. 6 - Normalized switching waveforms for constant gate-current Fig. 7 Typical saturation characteristics for all types. drive. CAPACITANCE (C)~ oF DRAIN=TO=SOURCE ON RESISTANCE ( yg (on)] = OHMS! 9 to 20 30 40 50. 60 70 ORAIR CURRENT (Ip}~A ORAIN-TO-SOURCE VOLTAGE (Vgg}V 92cs-S6144 925-36143n1 Fig. 8 - Typical drain-to-source on resistance as a function of Fig. 9 Capacitance as a function of drain-to-source voltage for drain current for ail types. ali types. 552 A) & 4 = = a 2 | TO SCOPE - & ! 8 | l = Yoox z i Sov 8 I I KELVIN zZ | ! CONTACT a . { & I z | = . ! & | 1] | low 2d & 9208-37362 ORAIN CURRENT{Ip)-A 9203-36145 Fig. 10 Typical forward transconductance as a function of drain Fig. 11 Switching Time Test Circuit current for ail types. : nono ns 128