DPG30C200PC HiPerFRED VRRM = 200 V I FAV = 2x 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C200PC Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 200 V TVJ = 25C 1 A VR = 200 V TVJ = 150C 0.08 mA TVJ = 25C 1.26 V 1.51 V 1.01 V IF = forward voltage drop min. 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 150 C TC = 145C rectangular 1.29 V T VJ = 175 C 15 A TVJ = 175 C 0.69 V d = 0.5 for power loss calculation only 18 m 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 20 pF I RM max. reverse recovery current TVJ = 25 C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.25 TC = 25C 15 A; VR = 130 V -di F /dt = 130 A/s 90 240 W A TVJ = 125C 6.5 A TVJ = 25 C 35 ns TVJ = 125C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C Weight FC 2 20 mounting force with clip Product Marking D P G 30 C 200 PC IXYS Zyyww Logo 60 N Part number XXXXXXXXX Part No. g Assembly Line = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-263AB (D2Pak) (2) 000000 Date Code Assembly Code Ordering Standard Part Number DPG30C200PC Similar Part DPG30C200PB DPG30C200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG30C200PC Package TO-220AB (3) TO-247AD (3) * on die level Delivery Mode Tape & Reel Code No. 506675 Voltage class 200 200 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.69 V R 0 max slope resistance * 14.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PC Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200PC Fast Diode 80 0.5 16 TVJ = 125C 70 30 A VR = 130 V IF = 30 A 14 IF = 15 A 0.4 60 12 50 IF [A] IRM 10 0.3 [C] 40 7.5 A 8 [A] 0.2 30 IF = 7.5 A 15 A Qrr TVJ = 25C 150C 6 20 4 0.1 10 TVJ = 125C 2 0 0.0 0.0 0.5 1.0 1.5 2.0 VR = 130 V 0 2.5 0 VF [V] 100 200 300 400 500 600 0 100 200 300 400 500 600 -diF /dt [A/s] -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt Fig. 1 Forward current IF versus VF Fig. 3 Typ. peak reverse current IRM versus -diF /dt 70 1.4 400 16 TVJ = 125C 14 VR = 130 V 1.2 TVJ = 125C 60 1.0 0.8 0.6 IF = 30 A 50 trr Kf VFR 10 0.2 IRM [ns] 40 Qrr 30 [ns] 6 4 7.5 A 20 20 40 60 80 100 120 140 160 0 0 100 200 300 400 500 600 0 -diF /dt [A/s] TVJ [C] tfr VFR 2 Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 100 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1.8 16 14 1.6 12 [J] tfr 200 [V] 15 A 0.0 0 300 8 0.4 Erec IF = 15 A VR = 130 V 12 IF = 30 A 1.4 IF = 15 A 10 ZthJC IF = 7.5 A 8 1.2 [K/W] 1.0 6 4 0.8 TVJ = 125C 2 VR = 130 V 0.6 0 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: DPG30C200PC