ON Semiconductor NPN TIP100 TIP101* Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. TIP102 * PNP * High DC Current Gain -- * * * * TIP105 hFE = 2500 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage -- @ 30 mAdc VCEO(sus) = 60 Vdc (Min) -- TIP100, TIP105 = 80 Vdc (Min) -- TIP101, TIP106 = 100 Vdc (Min) -- TIP102, TIP107 Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc Monolithic Construction with Built-in Base-Emitter Shunt Resistors TO-220AB Compact Package TIP106 * TIP107 * *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII IIIIIIIII III III IIII IIII IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIII IIIII IIIIII III DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS 80 WATTS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25C Derate above 25C Symbol VCEO VCB TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Unit 60 80 100 Vdc 60 80 100 Vdc VEB IC 5.0 IB PD Vdc 8.0 15 Adc 1.0 Adc 80 0.64 Watts W/C Unclamped Inductive Load Energy (1) E 30 mJ Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 Watts W/C TJ, Tstg -65 to +150 C Operating and Storage Junction Temperature Range 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.56 C/W 62.5 C/W Thermal Resistance, Junction to Ambient RJA (1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 . Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 10 1 Publication Order Number: TIP100/D TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 1.0 20 0 0 TA 0 20 40 60 80 100 T, TEMPERATURE (C) 120 Figure 1. Power Derating http://onsemi.com 2 140 160 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 -- -- -- -- -- -- 50 50 50 -- -- -- 50 50 50 -- 8.0 1000 200 20,000 -- -- -- 2.0 2.5 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Vdc Adc ICEO Adc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) (IC = 8.0 Adc, IB = 80 mAdc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) -- 2.8 hfe 4.0 -- Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) -- Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob TIP105, TIP106, TIP107 TIP100, TIP101, TIP102 pF -- -- 300 200 (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5.0 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA SCOPE V2 approx +8.0 V t, TIME (s) TUT RB 51 0 V1 approx -12 V D1 8.0 k 120 25 s tr, tf 10 ns DUTY CYCLE = 1.0% 0.7 0.5 0.3 0.1 0.07 0.05 0.1 for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities. tf 1.0 0.2 +4.0 V PNP NPN ts 3.0 2.0 Figure 2. Switching Times Test Circuit VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times http://onsemi.com 3 5.0 7.0 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 4. Thermal Response IC, COLLECTOR CURRENT (mA) 20 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown 5ms 5.0 100 s 1ms d TJ = 150C c BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2.0 1.0 0.5 0.2 0.1 TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 0.05 0.02 1.0 2.0 5.0 20 50 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active-Region Safe Operating Area 300 5000 3000 2000 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc TJ = 25C 200 C, CAPACITANCE (pF) h fe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 100 50 30 20 10 1.0 5.0 100 Cib 70 50 PNP NPN 2.0 Cob 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 Figure 6. Small-Signal Current Gain PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 100 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 NPN TIP100, TIP101, TIP102 PNP TIP105, TIP106, TIP107 20,000 20,000 VCE = 4.0 V 5000 TJ = 150C 25C 3000 2000 -55C 1000 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 TJ = 150C 25C 3000 2000 -55C 1000 700 500 300 200 0.1 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 3.0 TJ = 25C 2.6 2.2 IC = 2.0 A 4.0 A 6.0 A 1.8 1.4 1.0 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IB, BASE CURRENT (mA) 20 30 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 5.0 7.0 10 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25C TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 0.5 0.1 0.5 0.7 1.0 1.5 2.0 3.0 5.0 7.0 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 VCE(sat) @ IC/IB = 250 0.2 0.3 2.0 VCE(sat) @ IC/IB = 250 0.5 0.1 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 5 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 6 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 Notes http://onsemi.com 7 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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