FEATURES
DTrenchFETr Power MOSFET
Pb-free
Available
Si4925DY
Vishay Siliconix
Document Number: 71795
S-50402—Rev. E, 07-Mar-05
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
30
0.032 @ VGS = −10 V −6.3
−30 0.045 @ VGS = −4.5 V −5.3
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4925DY
Si4925DY-T1 (with Tape and Reel)
: Si4925DY—E3 (Lead (Pb)-Free)
Si4925DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS −30
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ = 150
_
C)a
TA = 25_C
ID
−6.3 −4.7
Continuous Drain Current (TJ = 150_C)a
TA = 70_CID−5.0 −3.7
A
Pulsed Drain Current IDM −40 A
Continuous Source Current (Diode Conduction)aIS−1.7 −0.9
Maximum Power Dissipationa
TA = 25_C
PD
2 1.1
W
Maximum Power Dissipationa
TA = 70_CPD1.3 0.70 W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ Max Unit
Mi J ti tAbit
a
t v 10 sec
R
45 62.5
Maximum Junction-to-Ambienta
Steady-State RthJA 85 110 _C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 28 35
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Si4925DY
Vishay Siliconix
www.vishay.com
2Document Number: 71795
S-50402—Rev. E, 07-Mar-05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min TypaMax Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA−1−3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V −1
mA
Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V, TJ = 55_C−25 mA
On-State Drain CurrentbID(on) VDS v −5 V, VGS = −10 V −20 A
Drain Source On State Resistanceb
rDS( )
VGS = −10 V, ID = −6.3 A 0.024 0.032
W
Drain-Source On-State Resistance
b
rDS(on) VGS = −4.5 V, ID = −5.3 A 0.036 0.045 W
Forward Transconductancebgfs VDS = −15 V, ID = −6.3 A 14 S
Diode Forward VoltagebVSD IS = −1.7 A, VGS = 0 V −0.8 −1.2 V
Dynamica
Total Gate Charge Qg27 50
Gate-Source Charge Qgs VDS = −15 V, VGS = −10 V, ID = −6.3 A 6 nC
Gate-Drain Charge Qgd 4.5
Turn-On Delay Time td(on) 16 20
Rise Time trVDD = −15 V, RL = 15 W10 20
Turn-Off Delay Time td(off)
,
ID ^ −1 A, VGEN = −10 V, Rg = 6 W55 80 ns
Fall Time tf20 40
Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms 40 90
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
8
16
24
32
40
012345
0
8
16
24
32
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS = 10 thru 5 V
25_C
TC = −55_C
125_C
3 V
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
4 V
Si4925DY
Vishay Siliconix
Document Number: 71795
S-50402—Rev. E, 07-Mar-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.00
0.04
0.08
0.12
0.16
0.20
0246810
0.00
0.02
0.04
0.06
0.08
0.10
0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
0 6 12 18 24 30
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
0
400
800
1200
1600
2000
2400
0 5 10 15 20 25 30
Crss
Coss
Ciss
VDS = 15 V
ID = 6.3 A
VGS = 10 V
ID = 6.3 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
VGS − On-Resistance (rDS(on) W)
ID − Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
1.5
1
10
40
0 0.3 0.6 0.9
TJ = 25_C
TJ = 150_C
Source-Drain Diode Forward Voltage
VSD − Source-to-Drain Voltage (V)
− Source Current (A)IS
ID = 6.3 A
On-Resistance vs. Gate-to-Source Voltage
− On-Resistance (rDS(on) W)
VGS − Gate-to-Source Voltage (V)
VGS = 4.5 V
1.2
rDS(on) − On-Resiistance
(Normalized)
Si4925DY
Vishay Siliconix
www.vishay.com
4Document Number: 71795
S-50402—Rev. E, 07-Mar-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
15
30
5
10
Power (W)
Single Pulse Power
Time (sec)
20
25
10−310−21 10 60010−1100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
10−310−211010−1
10−4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1 100 6001010−1
10−3
−0.4
−0.2
0.0
0.2
0.4
0.6
0.8
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ − Temperature (_C)
10−2
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http://www.vishay.com/ppg?71795.
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Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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