IMX8
DUAL NPN SMALL SIGNAL SURF ACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (IMT4)
• Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device, Note 4 and 5
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
• Marking Information: KX8, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.016 grams (approximate)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
F ⎯ ⎯ 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8° ⎯
All Dimens ons in mm i
A
M
JL
DF
BC
H
K
B
2
B
1
E
1
C
2
E
2
C
1
B
2
B
1
E
1
C
2
E
2
C
1
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 120 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current - Continuous IC50 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 120 ⎯ ⎯ V IC = 50μA
Collector-Emitter Breakdown Voltage V(BR)CEO 120 ⎯ ⎯ V IC = 1.0mA
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ⎯ ⎯ V IE = 50μA
Collector Cutoff Current ICBO ⎯ ⎯ 0.5 μA VCB = 100V
Emitter Cutoff Current IEBO ⎯ ⎯ 0.5 μA VEB = 4.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 180 ⎯ 820 ⎯ IC = 2.0mA, VCE = 6.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 0.5 V IC = 10mA, IB = 1.0mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT⎯ 140 ⎯ MHz VCE = 12V, IC = 2.0mA,
f = 100MHz
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30304 Rev. 8 - 2 1 of 3
www.diodes.com IMX8
© Diodes Incorporated
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Max Power Dissipation vs.
Am bi ent Tem per at ure
A
150
200
250
300
350
0
0
100
200
300
1.0 10.0 100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C,
400
500
600
T = 25C
A
°
T = -25C
A
°
T = 75C
A
°
0.1
1.0
100
10.0
00
.9
DS30304 Rev. 8 - 2 2 of 3
www.diodes.com IMX8
© Diodes Incorporated
0.80.70.60.1 0.2 0.3 0.4 0.5
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(mA)
C
V , BASE-EMITTER VOL TAGE (V)
Fig. 3 Typical Collector Current vs.
Base-Emitter Vol t age
BE(ON)
0.010
0.100
1.0
110 100 1,000
V,
T = 25C
A
°
T = -25C
A
°
T= 75C
A
°
E
R
T
T
C
O
LLE
C
T
O
R
T
O
EMI
SATURATION VOLT AGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter V oltage
vs. C ollector Cu r r ent
C
T = 150C
A
°
T = -50C
A
°
T = 25C
A
°
1
10
1,000
100
110 100
f,
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Gain Bandwidth Product
vs. Collector Current
C
V = 5 Volts
CE
0
0
1
2
3
4
5
6
0.5 1.5122.5 3.53445
I,
.5
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(mA)
C
V , COLLECTOR-EMITTER VOL TAGE (V)
Fig. 6 Typical Collector Current vs.
Colle c tor - Emitt er Voltage
CE
I = 16µA
B
I = 1µA
B
4
I = 1µA
B
2
I = 1µA
B
0
I = µA
B
8
I = µA
B
6
I = µA
B
4
Ordering Information (Note 5 & 6 )
Device Packaging Shipping
IMX8-7-F SOT-26 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KX8
YM
KX8 = Product Type Marking Code
YM = Date Code Marking
Y =Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30304 Rev. 8 - 2 3 of 3
www.diodes.com IMX8
© Diodes Incorporated
