KIC7TWO04FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT SEMICONDUCTOR TECHNICAL DATA KEC 3 INVERTERS The KIC7WO4FU is a high speed CMOS BUFFER apy - fabricated with silicon gate CMOS technology. [] [] ] f] The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Bl B COU 4 a [lL FEATURES * High Speed : tpa=6ns(Typ.) at Vec=5V. * Low Power Dissipation : Icc=1#A(Max.) at Ta=25T. * High Noise Immunity : Van=Vnw=28% Vec(Min.). * Output Drive Capability : 10 LSTTL Loads. * Symmetrical Output Impedance : |Ios|=Ior=4mA(Min.) oo * Balanced Propagation Delays : tprn=tpn. + Wide Operating Voltage Range : Vectopry=2~6V. 1 A A B Bi D G H SM8 MAXIMUM RATINGS (Ta=25T) CHARACTERISTIC SYMBOL RATING UNIT MARKING Supply Voltage Range Vec -0.9~7 Vv Type Name DC Input Voltage Vin -0.5~ Vect0.5 Vv O 04 DC Output Voltage Voor | -05~Vect05 | V _ Input Diode Current lik +20 mA [| [| Output Diode Current lox +20 mA LItit DE Output Current Four #25 mA PIN CONNECTION(TOP VIEW) DC Vec/Ground Current Tec +25 mA A Vee Power Dissipation Pp 300 mW pL Storage Temperature Tstg -65 ~ 150 Cc a <q a Lead Temperature (10s) TL 260 Cc eA P Is] 3A GND 2y 1999. 8. 7 Revision No : 2 KEC 1/3 KIC7WO04FU LOGIC DIAGRAM TRUTH TABLE A Y i ay L H 2A (3) (6) 2Y u 3A (8) @) 3Y RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Veco 2~6 Vv Input Voltage Vin O~Vec Vv Output Voltage Vout O0~Vec Vv Operating Temperature Topr -40~85 Cc 0~1000 (Vcc=2.0V) Input Rise and Fall Time t, te O~ 500 (Vcc=4.5V) ns Q~ 400 (Vcc=6.0V) DC ELECTRICAL CHARACTERISTICS Ta=25 Ta=-40~85C CHARACTERISTIC |SYMBOL] | TEST CONDITION UNIT Veco | MIN. | TYP. |MAX.| MIN. | MAX. 20 | 15 = = 15 = ner wa Vin - 45 | 315 | - - | 315 | - V put vouage 60 | 42 - - 42 - 20; - = 05 = 05 ane : Vi - 45 | - - 141935} - | 135] v pu g 60 | - - 18 - 18 20 | 19 | 20 = 19 = a Ton=-20A 45 | 44 | 45 - 4A - oe me Vou | Viw=Vit 60 | 59 | 60 - 5.9 - V MEDUE YoMage Tou=-4mA 45 | 418 | 431 | - [413] - Ton=-5.2mA 60 | 568 | 580 | - | 563} - 20; - 0.0 | 01 - 0.1 Low-Level To. =20UA 45 | - 0.0 | 01 - 0.1 O t t Volta e VoL Vin=Vin 6.0 _ 0.0 0.1 _ 0.1 Vv EDU & To =4mA 45 | - | 017 | 026 | - | 0233 Toi =5.2mA 60 | - | 018 | 026 | - | 033 Input Leakage In | Vin=Vec or GND 60 | - - |+o1] - | 10 Current WA Quiescent Ice | ViveVec or GND 60 | - | - | 10 | - | 100 Supply Current 1999. 8. 7 Revision No : 2 KEC 2/3 KIC7WO04FU AC ELECTRICAL CHARACTERISTICS (Ci=15pF, Vec=5V, Ta=25C) Ta=25C CHARACTERISTIC SYMBOL TEST CONDITION UNIT MIN. | TYP. | MAX. Output Transition Time bruit - - A 8 ns tra. . . re tply Propagation Delay Time t - - 6 12 ns pHI. AC ELECTRICAL CHARACTERISTICS (Ci=50pF, Input t:=tr=6ns) Ta=25C Ta=-40~ 85C CHARACTERISTIC SYMBOL TEST CONDITION UNIT Vec | MIN. | TYP. | MAX.} MIN. | MAX. tr 2.0 - 30 15 - 95 Output Transition Time bee - 4.5 - 8 15 - 19 ns Tr 6.0 - 7 13 - 16 t 2.0 - 27 75 - 95 Propagation Delay Time eo - 45 - 9 15 - 19 ns pu 6.0 - 8 13 - 16 Input Capacitance Cin - - 5 10 - 10 Tas pF Power Dissipation Cp (Note 1) _ 20 _ _ _ Capacitance Note 1 : Cpp is defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. Iccto=Crp* Vec*fintlcc/3 (per gate) SWITCHING CHARACTERISTICS OPERATING CURRENT TEST CIRCUIT CONSUMPTION TEST CIRCUIT Vcc 6ns 6ns Van eBV * 90% Vcc cc= VIN N 50% 10% GND P.G VIN VouT G. P.G. o tTHL tTLH 2 S | VoH 3 Cy, Vout 90% 50% nels : J 10% This input waveform is equal to VoL SWITCHING CHARACTERISTICS TEST CIRCUIT input waveform. tpHL UpLH 1999. 8. 7 Revision No : 2 KEC 3/3