VDD (2.5 V)
AD0
AD1
AD2
AD3
ENSMB
SCL(2)
READ_EN
SDA(2)
GND (DAP)
(1) Schematic shows connection for SMBus Slave Mode (ENSMB=1k to VDD)
For SMBus Master Mode or Pin Mode configuration, the connections are different.
(2) SMBus signals need to be pulled up elsewhere in the system.
(3) Schematic requires different connections for 2.5 V mode.
VIN
0.1F (x2)
SMBus Slave Mode(1)
INA+
INA-
OUTA+
OUTA-
SMBus Slave Mode(1)
VDD_SEL
VIN (3.3 V)
INB+
INB- OUTB+
OUTB-
RXDET
RATE
PRSNT
From PCIe
PRSNT signal
Address straps
(pull-up to VIN or
pull-down to GND)(1)
1F
3.3V(3)
10F
ALL_DONE
SMBus Slave Mode(1)
SD_TH
To SMBus/I2C
Host Controller
DS80PCI102
DS80PCI102
System Board
Root Complex
Add-in Card
End Point
DS80PCI102
Board
Trace
PCIe
Connector
PCIe
Connector
TX
RX
RX
TX 4
4
4
4
Product
Folder
Sample &
Buy
Technical
Documents
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Support &
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DS80PCI102
SNLS344G JULY 2011REVISED AUGUST 2015
DS80PCI102 2.5-Gbps / 5.0-Gbps / 8.0-Gbps 1-Lane PCI-Express™
Repeater With Equalization and De-Emphasis
1 Features 2 Applications
PCI Express Gen-1, Gen-2, and Gen-3
1 Comprehensive Family, Proven System
Interoperability 3 Description
DS80PCI102: x1 PCIe The DS80PCI102 is a low-power, 1-lane repeater
Gen-1, Gen-2, and Gen-3 with 4-stage input equalization, and an output de-
DS80PCI402: x4 PCIe emphasis driver to enhance the reach of PCI-Express
Gen-1, Gen-2, and Gen-3 serial links in board-to-board or cable interconnects.
The device is ideal for x1 PCI-Express configuration,
DS80PCI800: x8/x16 PCIe and it automatically detects and adapts to Gen-1,
Gen-1, Gen-2, and Gen-3 Gen-2, and Gen-3 data rates for easy system
Automatic Rate-Detect and Adaptation to upgrade.
Gen-1, Gen-2, and Gen-3 Speeds DS80PCI102 offers programmable transmit de-
Seamless Support for Gen-3 Transmit FIR emphasis (up to 12 dB), transmit VOD (up to
Handshake 1300 mVp-p), and receive equalization (up to 36 dB)
Receiver EQ (up to 36 dB), Transmit De- to enable longer distance transmission in lossy
Emphasis (up to -12 dB) copper cables (10 meters or more), or backplanes
Adjustable Transmit VOD: 0.7 to 1.3 Vp-p (Pin (40 inches or more) with multiple connectors. The
receiver can open an input eye that is completely
Mode) closed due to inter-symbol interference (ISI)
0.2 UI of Residual Deterministic Jitter at 8 Gbps introduced by the interconnect medium.
After 40 Inches of FR4 or 10 m 30-awg PCIe The programmable settings can be applied easily
Cable through pins or software (SMBus/I2C), or can be
Low Power Dissipation With Ability to Turn Off loaded through an external EEPROM. When
Unused Channels: 65 mW/Channel operating in the EEPROM mode, the configuration
Automatic Receiver Detect (Hot-Plug) information is automatically loaded on power up,
Multiple Configuration Modes: Pins/SMBus/Direct- which eliminates the need for an external
microprocessor or software driver.
EEPROM Load
Flow-Thru Pinout in 4-mm × 4-mm 24-Pin Device Information(1)
Leadless WQFN Package PART NUMBER PACKAGE BODY SIZE (NOM)
Single Supply Voltage: 2.5 V or 3.3 V (Selectable) DS80PCI102 WQFN (24) 4.00 mm x 4.00 mm
±5-kV HBM ESD Rating (1) For all available packages, see the orderable addendum at
40°C to 85°C Operating Temperature Range the end of the data sheet.
Typical Application Block Diagram Simplified Schematic Diagram
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DS80PCI102
SNLS344G JULY 2011REVISED AUGUST 2015
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Table of Contents
7.6 Register Maps......................................................... 20
1 Features.................................................................. 18 Application and Implementation ........................ 35
2 Applications ........................................................... 18.1 Application Information............................................ 35
3 Description............................................................. 18.2 Typical Application ................................................. 35
4 Revision History..................................................... 29 Power Supply Recommendations...................... 37
5 Pin Configuration and Functions......................... 39.1 3.3-V or 2.5-V Supply Mode Operation................... 37
6 Specifications......................................................... 59.2 Power Supply Bypass............................................. 38
6.1 Absolute Maximum Ratings ..................................... 510 Layout................................................................... 39
6.2 ESD Ratings.............................................................. 510.1 Layout Guidelines ................................................. 39
6.3 Recommended Operating Conditions....................... 510.2 Layout Example .................................................... 39
6.4 Electrical Characteristics........................................... 611 Device and Documentation Support ................. 40
6.5 Electrical Characteristics Serial Management Bus
Interface .................................................................... 911.1 Device Support...................................................... 40
6.6 Timing Diagrams..................................................... 10 11.2 Documentation Support ........................................ 40
6.7 Typical Characteristics............................................ 11 11.3 Community Resources.......................................... 40
11.4 Trademarks........................................................... 40
7 Detailed Description............................................ 12 11.5 Electrostatic Discharge Caution............................ 40
7.1 Overview................................................................. 12 11.6 Glossary................................................................ 40
7.2 Functional Block Diagram....................................... 12
7.3 Feature Description................................................. 13 12 Mechanical, Packaging, and Orderable
Information........................................................... 40
7.4 Device Functional Modes........................................ 15
7.5 Programming........................................................... 16
4 Revision History
Changes from Revision F (October 2014) to Revision G Page
Changed pin mapping for VIN and VDD to correct typo ........................................................................................................ 5
Added full SMBus-to-EEPROM table mapping.................................................................................................................... 20
Changed description of EEPROM bits to match corresponding SMBus register map description ..................................... 20
Changed location of CHB VOD in Table 7 to match correct location in EEPROM map...................................................... 23
Changed address start and end numbers for Devices 0-3 to reflect correct bytes per device ........................................... 25
Changed EEPROM bit description to match the description in the corresponding SMBus register map ........................... 25
Changed location of CHA VOD in Table 9 to match correct location in EEPROM map ..................................................... 27
Added information in Register Map about register bits saved to EEPROM ........................................................................ 29
Changes from Revision E (February 2013) to Revision F Page
Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
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INA+
INA-
OUTB+
VDD_SEL
VIN
18
INB+
INB-
17
14
13
16
RATE
VOD_SEL/READEN
RXDET/DONE
SD_TH
OUTA+
OUTA-
OUTB-
15
VDD
24
23
22
21
20
19
11
12
8
10
9
7
EQB1/AD2
ENSMB
1
2
5
6
3
SCL/DEMB
EQB0/AD3
SDA/DEMA
4
VDD
PRSNT
AD1/EQA1
AD0/EQA0
TOP VIEW
DAP = GND
DS80PCI102
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SNLS344G JULY 2011REVISED AUGUST 2015
5 Pin Configuration and Functions
RTW Package
24 Pins
Top View
Pin Functions(1)(2)(3)(4)
PIN I/O, TYPE DESCRIPTION
NAME NO.
DIFFERENTIAL HIGH SPEED I/O'S
Inverting and noninverting differential inputs to the equalizer. A gated on-chip 50-Ω
INA+, INA-, 24, 23 termination resistor connects INn+ to VDD and INn- to VDD depending on the state of
I, CML
INB+, INB- 11, 12 RXDET. See Table 4
AC coupling required on high-speed I/O
OUTA+, OUTA-, 7, 8 Inverting and noninverting 50-Ωdriver outputs with de-emphasis. Compatible with AC-
O, CML
OUTB+, OUTB- 20, 19 coupled CML inputs.
CONTROL PINS SHARED (LVCMOS)
System management bus (SMBus) enable pin
I, 4-LEVEL, Tie 1 kΩto VDD (2.5-V mode) or VIN (3.3-V mode) = Register access SMBus slave mode
ENSMB 3 LVCMOS FLOAT = Read external EEPROM (master SMBUS mode)
Tie 1 kΩto GND = Pin mode
(1) LVCMOS inputs without the “FLOAT” conditions must be driven to a logic low or high at all times or operation is not verified.
(2) Input edge rate for LVCMOS/FLOAT inputs must be faster than 50 ns from 10% to 90%.
(3) For 3.3-V mode operation, VIN pin = 3.3 V and the VDD for the 4-level input is 3.3 V.
(4) For 2.5-V mode operation, VDD pin = 2.5 V and the VDD for the 4-level input is 2.5 V.
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Pin Functions(1)(2)(3)(4) (continued)
PIN I/O, TYPE DESCRIPTION
NAME NO.
ENSMB = 1 (SMBus SLAVE MODE)
SCL 5 I, 2-LEVEL, In SMBus Slave Mode, this pin is the SMBus clock I/O. Clock input or open drain output.
LVCMOS, O, External 2-kΩto 5-kΩpullup resistor to VDD or VIN recommended as per SMBus interface
open drain standards.(5)
SDA 4 I, 2-LEVEL, In both SMBus Modes, this pin is the SMBus data I/O. Data input or open drain output.
LVCMOS, O, External 2-kΩto 5-kΩpullup resistor to VDD or VIN recommended as per SMBus interface
open drain standards.(5)
AD0-AD3 10, 9, 2, 1 I, 4-LEVEL, SMBus Slave Address Inputs. In both SMBus Modes, these pins are the user set SMBus
LVCMOS slave address inputs.
External 1-kΩpullup or pulldown recommended.
READEN 17 I, 2-LEVEL, When in SMBus Slave Mode the READEN pin must be tied LOW for the AD[3:0] to be
LVCMOS active. If this pin is tied HIGH or FLOAT, the device slave address is 0xB0.
ENSMB = FLOAT (SMBus MASTER MODE)
I, 2-LEVEL, Clock output when loading EEPROM configuration, reverting to SMBus clock input when
LVCMOS, O, EEPROM load is complete (DONE = 0).
SCL 5 open drain External 2-kΩto 5-kΩpullup resistor to VDD or VIN recommended as per SMBus interface
standards.(5)
I, 2-LEVEL, In both SMBus Modes, this pin is the SMBus data I/O. Data input or open drain output.
SDA 4 LVCMOS, O, External 2-kΩto 5-kΩpullup resistor to VDD or VIN recommended as per SMBus interface
open drain standards.(5)
I, 4-LEVEL, SMBus Slave Address Inputs. In both SMBus Modes, these pins are the user set SMBus
AD0-AD3 10, 9, 2, 1 LVCMOS slave address inputs.
External 1-kΩpullup or pulldown recommended.
I, 2-LEVEL, A logic low on this pin starts the load from the external EEPROM.(6)
READEN 17 LVCMOS Once EEPROM load is complete (DONE = 0), this pin functionality remains as READEN. It
does not revert to an SD_TH input.
O, 2-LEVEL, Valid register load status output
DONE 18 LVCMOS HIGH = External EEPROM load failed or incomplete
LOW = External EEPROM load passed
ENSMB = 0 (PIN MODE)
EQA[1:0] and EQB[1:0] control the level of equalization on the input pins. The pins are active
only when ENSMB is deasserted (LOW).
EQA0, EQA1 10, 9 I, 4-LEVEL, When ENSMB goes high the SMBus registers provide independent control of each lane, and
EQB0, EQB1 1, 2 LVCMOS the EQA[1:0] and EQB[1:0] pins are converted to SMBUS AD[3:0] inputs.
See Table 2.
DEMA DEMB controls the level of de-emphasis. The DEMA/B pins are only active when
ENSMB is deasserted (LOW). DEMA controls the A channel and DEMB controls the B
I, 4-LEVEL,
DEMA, DEMB 4, 5 channel. When ENSMB goes high the SMBus registers provide independent control of each
LVCMOS channel and the DEM pins are converted to SMBUS SDA and SCL pins.
See Table 3.
CONTROL PINS BOTH PIN AND SMBUS MODES (LVCMOS)
I, 2-LEVEL, Cable Present Detect input. High when a cable is not present per PCIe Cabling Spec. 1.0.
PRSNT 6 LVCMOS Puts part into low power mode. When LOW (normal operation) part is enabled.
See Table 4.
I, 4-LEVEL, VOD Select pin. See Table 3.
VOD_SEL 17 LVCMOS
I, LVCMOS Controls the internal regulator.
FLOAT = 2.5-V mode
VDD_SEL 16 Tie GND = 3.3-V mode
See Figure 16.
The RXDET pin controls the receiver detect function. Depending on the input level, a 50-Ωor
I, 4-LEVEL,
RXDET 18 > 50-kΩtermination to the power rail is enabled.
LVCMOS See Table 4.
(5) SCL and SDA pins can be tied either to 3.3 V or 2.5 V, regardless of whether the device is operating in 2.5-V mode or 3.3-V mode.
(6) When READEN is asserted low, the device attempts to load EEPROM. If EEPROM cannot be loaded successfully, for example due to
an invalid or blank hex file, the DS80PCI102 waits indefinitely in an unknown state where SMBus access is not possible. DONE pin
remains high in this situation.
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Pin Functions(1)(2)(3)(4) (continued)
PIN I/O, TYPE DESCRIPTION
NAME NO.
I, 4-LEVEL, RATE control pin selects GEN 1,2 and GEN 3 operating modes.
LVCMOS Tie 1 kΩto GND = GEN 1,2
RATE 13 FLOAT = AUTO Rate Select of Gen1/2 and Gen3 with de-emphasis
Tie 20 kΩto GND = GEN 3 without de-emphasis
Tied 1 kΩto VDD = RESERVED
I, 4-LEVEL, Controls the internal Signal Detect Threshold.
SD_TH 14 LVCMOS See Table 5.
POWER
Power In 3.3-V mode, feed 3.3 V to VIN
VIN 15 In 2.5-V mode, leave floating
Power Power supply pins
VDD 21, 22 2.5-V mode, connect to 2.5-V supply
3.3-V mode, connect 0.1-µF capacitor to each VDD pin (output of LDO)
GND DAP Power Ground pad (DAP - die attach pad).
6 Specifications
6.1 Absolute Maximum Ratings (1)(2)
MIN MAX UNIT
Supply voltage (VDD - 2.5 V) –0.5 2.75 V
Supply voltage (VIN - 3.3 V) –0.5 4.0 V
LVCMOS Input/Output Voltage –0.5 4.0 V
CML Input Voltage –0.5 VDD + 0.5 V
CML Input Current –30 30 mA
Junction Temperature 125 °C
Lead temperature soldering (4 s)(3) 260 °C
Storage temperature, Tstg –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Absolute Maximum Numbers are specified for a junction temperature range of –40° C to 125° C. Models are validated to Maximum
Operating Voltages only.
(3) For soldering specifications: See application note SNOA549.
6.2 ESD Ratings VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±5000
Charged device model (CDM), per JEDEC specification JESD22-C101, ±1250
V(ESD) Electrostatic discharge V
all pins(2)
MM, STD - JESD22-A115-A ±100
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions MIN NOM MAX UNIT
Supply Voltage (2.5-V mode) 2.375 2.5 2.625 V
Supply Voltage (3.3-V mode) 3.0 3.3 3.6 V
Ambient Temperature -40 25 85 °C
SMBus (SDA, SCL) 3.6 V
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6.4 Electrical Characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER
VIN = 3.3-V supply, 50 63
EQ = Enabled, RXDET = 1, mA
VOD = 1.0 Vp-p,
PRSNT = LOW
IDD Supply Current VIN = 3.3-V supply, 9 12 mA
PRSNT = HIGH
VDD = 2.5 V, 6 9 mA
PRSNT = HIGH
LVCMOS / LVTTL DC SPECIFICATIONS
VIH25 High-level input voltage 2.5-V Mode 2.0 VDD V
(READ_EN pin)
VIH33 High-level input voltage 3.3-V Mode 2.0 VIN V
(READ_EN pin) 2.5-V Mode 0.9 × VDD VDD
High Level Input Voltage
VIH V
(PRSNT pin) 3.3-V Mode 0.9 × VIN VIN
VIL Low Level Input Voltage 0 0.7 V
VOH High Level Output Voltage (DONE pin) IOH =4 mA 2.0 V
VOL Low Level Output Voltage (DONE pin) IOL = 4 mA 0.4 V
Input High Current (PRSNT pin) VIN Supply = 3.6 V, –15 15 µA
Input = 3.6 V
Input High Current with internal +20 80
IIH resistors µA
(4–level input pin)
Input Low Current (PRSNT pin) VIN = 3.6 V, –15 15 µA
Input = 0 V
Input Low Current with internal –160 -40
IIL resistors µA
(4–level input pin)
CML RECEIVER INPUTS (IN_N+, IN_N-)
0.05 to 1.25 GHz –16 dB
RLRX-DIFF RX Differential return loss 1.25 to 2.5 GHz –16 dB
2.5 to 4.0 GHz –14 dB
0.05 to 2.5 GHz –12 dB
RLRX-CM RX Common mode return loss 2.5 to 4.0 GHz –8 dB
ZRX-DC RX DC single-ended impedance VDD = 2.5 V 40 50 60 Ω
ZRX-DIFF-DC RX DC differential mode impedance VDD = 2.5 V 80 100 120 Ω
VID - Differential RX peak to peak 1.2
VRX-DIFF-DC V
input voltage VID = 0 to 200 mV, 50
ZRX-HIGH-IMP- DC Input common mode impedance ENSMB = 0, RXDET = 0, kΩ
DC-POS for V > 0 VDD = 2.5 V
SD_TH = Float, 180
VRX-SIGNAL-DET- Signal detect assert level for active 0101 pattern at 8 Gbps mVp-p
DIFF-PP data signal Measured at pins
SD_TH = Float, 110
VRX-IDLE-DET- Signal detect deassert level for 0101 pattern at 8 Gbps mVp-p
DIFF-PP electrical idle Measured at pins
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Electrical Characteristics (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
HIGH SPEED OUTPUTS
Differential measurement with 0.8 1.0 1.1
OUT_n+ and OUT_n-,
terminated by 50 Ωto GND,
VTX-DIFF-PP Output voltage differential swing Vp-p
AC-Coupled, VID = 1.0 Vp-p,
DEMA/B = 0,
VOD_SEL = Float, (1)
VOD = 1.0 Vp-p, –3.5
VTX-DE- TX de-emphasis ratio DEMA/B = Float, dB
RATIO_3.5 VOD_SEL = Float, (GEN 1, 2 only)
VOD = 1.0 Vp-p, –6
VTX-DE-RATIO_6 TX de-emphasis ratio DEMA/B = 20 kΩto GND, dB
VOD_SEL = Float, (GEN 1, 2 only)
VID = 800 mV, 0101 pattern, 8.0 0.3
Gbps,
TTX-RJ Random Ritter ps RMS
VOD = 1.0 V, EQ = 0x00,
DE = 0 dB
VID = 800 mV, 0.05
PRBS15, 8.0 Gbps
TTX-DJ Deterministic Jitter UIpp
VOD = 1.0 V, EQ = 0x00,
DE = 0 dB
20% to 80% of differential output 34 45
TTX-RISE-FALL TX rise/fall time ps
voltage, (2)
20% to 80% of differential output 0.01
TRF-MISMATCH TX rise/fall mismatch UI
voltage, (2)
0.05 to 1.25 GHz –16 dB
RLTX-DIFF TX Differential return loss 1.25 to 2.5 GHz –12 dB
2.5 to 4 GHz –11 dB
0.05 to 2.5 GHz –12 dB
RLTX-CM TX Common mode return loss 2.5 to 4 GHz –8 dB
ZTX-DIFF-DC DC differential TX impedance 100 Ω
VOD = 1.0 Vp-p, 100
VTX-CM-AC-PP TX AC common mode voltage DEMA/B = 0, mVp-p
VOD_SEL = Float, (2)
Total current the transmitter can 20
ITX-SHORT TX short circuit current limit mA
supply when shorted to VDD or GND
VTX-CM-DC- (2) 100
Absolute delta of DC common mode
ACTIVE-IDLE- mV
voltage during L0 and electrical idle
DELTA
VTX-CM-DC-LINE- Absolute delta of DC common mode (2) 25 mV
DELTA voltgae between TX+ and TX-
Max time to transition to differential VID = 1.0 Vp-p, 8 Gbps 3.5
TTX-IDLE-DATA ns
DATA signal after IDLE
Max time to transition to IDLE after VID = 1.0 Vp-p, 8 Gbps 6.5
TTX-DATA-IDLE ns
differential DATA signal
High-to-Low and Low-to-High DE = 0, EQ = 0x00, (3) 200
TPLHD/PHLD ps
Differential Propagation Delay
TLSK Lane-to-lane skew T = 25ºC, VDD = 2.5 V 25 ps
TPPSK Part-to-part propagation delay skew T = 25ºC, VDD = 2.5 V 40 ps
(1) In GEN3 mode, the output VOD level is not fixed. It will be adjusted automatically based on the VID input amplitude level. The output
VOD level set by DEMA/B[1:0] in GEN3 mode is dependent on the VID level and the frequency content. The DS80PCI102 repeater in
GEN3 mode is designed to be transparent, so the TX-FIR (de-emphasis) is passed to the RX to support the PCIe GEN3 handshake
negotiation link training.
(2) Parameter is characterized but not tested in production.
(3) Propagation Delay measurements will change slightly based on the level of EQ selected. EQ = 0x00 will result in the shortest
propagation delays.
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Electrical Characteristics (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
EQUALIZATION
35” 4mils FR4, 0.14
Residual deterministic jitter at
DJE1 VID = 0.8 Vp-p, PRBS15, UIpp
8 Gbps EQ = 0x1F, DEM = 0 dB
35” 4mils FR4, 0.1
Residual deterministic jitter at
DJE2 VID = 0.8 Vp-p, PRBS15, UIpp
5 Gbps EQ = 0x1F, DEM = 0 dB
35” 4mils FR4, 0.05
DJE3 Residual deterministic jitter at 2.5 Gbps VID = 0.8 Vp-p, PRBS15, UIpp
EQ = 0x1F, DEM = 0 dB
10 meters 30-awg cable, 0.16
Residual deterministic jitter at
DJE4 VID = 0.8 Vp-p, PRBS15, UIpp
8 Gbps EQ = 0x2F, DEM = 0 dB
10 meters 30-awg cable, 0.1
Residual deterministic jitter at
DJE5 VID = 0.8 Vp-p, PRBS15, UIpp
5 Gbps EQ = 0x2F, DEM = 0 dB
10 meters 30-awg cable, 0.05
DJE6 Residual deterministic jitter at 2.5 Gbps VID = 0.8 Vp-p, PRBS15, UIpp
EQ = 0x2F, DEM = 0 dB
DE-EMPHASIS (GEN 1&2 MODE ONLY)
10” 4mils FR4, 0.1
Residual deterministic jitter at 2.5 Gbps VID = 0.8 Vp-p, PRBS15,
DJD1 UIpp
and 5.0 Gbps EQ = 0x00, VOD = 1.0 Vp-p,
DEM = 3.5 dB
20” 4mils FR4, 0.1
Residual deterministic jitter at 2.5 Gbps VID = 0.8 Vp-p, PRBS15,
DJD2 UIpp
and 5.0 Gbps EQ = 0x00, VOD = 1.0 Vp-p,
DEM = 9 dB
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6.5 Electrical Characteristics Serial Management Bus Interface
Over recommended operating supply and temperature ranges unless other specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SERIAL BUS INTERFACE DC SPECIFICATIONS
VIL Data, Clock Input Low Voltage 0.8 V
VIH Data, Clock Input High Voltage 2.1 3.6 V
IPULLUP Current Through Pullup Resistor or High Power Specification 4 mA
Current Source
VDD Nominal Bus Voltage 2.375 3.6 V
ILEAK-Bus Input Leakage Per Bus Segment (1) -200 200 µA
ILEAK-Pin Input Leakage Per Device Pin -15 µA
CICapacitance for SDA and SCL (1) (2) 10 pF
RTERM External Termination Resistance Pullup VDD = 3.3 V(1) (2) (3) 2000 Ω
pull to VDD = 2.5 V ± 5% OR 3.3 V Pullup VDD = 2.5 V(1) (2) (3) 1000 Ω
± 10%
SERIAL BUS INTERFACE TIMING SPECIFICATIONS
FSMB Bus Operating Frequency ENSMB = VDD (Slave Mode) 400 kHz
ENSMB = FLOAT (Master Mode) 280 400 520 kHz
TBUF Bus Free Time Between Stop and 1.3 µs
Start Condition
THD:STA Hold time after (Repeated) Start At IPULLUP, Max
Condition. After this period, the first 0.6 µs
clock is generated.
TSU:STA Repeated Start Condition Setup 0.6 µs
Time
TSU:STO Stop Condition Setup Time 0.6 µs
THD:DAT Data Hold Time 0 ns
TSU:DAT Data Setup Time 100 ns
TLOW Clock Low Period 1.3 µs
THIGH Clock High Period (4) 0.6 50 µs
tFClock/Data Fall Time (4) 300 ns
tRClock/Data Rise Time (4) 300 ns
tPOR Time in which a device must be (4) (5) 500 ms
operational after power-on reset
(1) Recommended value.
(2) Recommended maximum capacitance load per bus segment is 400 pF.
(3) Maximum termination voltage should be identical to the device supply voltage.
(4) Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1
SMBus common AC specifications for details.
(5) Specified by Design. Parameter not tested in production.
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SP
tBUF tHD:STA
tLOW
tR
tHD:DAT
tHIGH
tFtSU:DAT tSU:STA
ST SP
tSU:STO
SCL
SDA
ST
IN 0V
tPLHD
OUT 0V
tPHLD
+
-
+
-
0V
20%
80%
20%
80%
tFALL
tRISE
VOD = [Out+ - Out-]
DS80PCI102
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6.6 Timing Diagrams
Figure 1. CML Output and Rise and Fall Times
Figure 2. Propagation Delay Timing Diagram
Figure 3. Transmit IDLE-DATA and DATA-IDLE Response Time
Figure 4. SMBus Timing Parameters
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1007
1010
1013
1016
1019
1021
2.375 2.5 2.625
VOD (mVp-p)
VDD (V)
T = 25°C
1012
1014
1016
1018
1020
-40 -15 10 35 60 85
VOD (mVp-p)
TEMPERATURE (°C)
VDD = 2.5 V
DS80PCI102
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6.7 Typical Characteristics
Figure 6. Output Differential Voltage (VOD = 1.0 Vp-p) vs
Figure 5. Output Differential Voltage (VOD = 1.0 Vp-p) vs Temperature
Supply Voltage (VDD)
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B Channel
Digital Core and SMBus Registers
SCL
SDA
AD[3:0]
PRSNT Internal
3.3 V to 2.5 V
Regulator
READEN
DONE
INA+
INA- EQ OUTA+
OUTA-
A Channel
Term
Driver
Rate
Detect Signal
Detect
RATE
RXDET
VDD (x2)
ENSMB
EQA[1:0]
DEMA
VIN
VDD_SEL
EQB[1:0]
DEMB
INB+
INB- EQ Driver OUTB+
OUTB-
Rx
Detect
Term
Rate
Detect Signal
Detect Rx
Detect
VOD_SEL
Note: This diagram is representative of device signal flow
only; Channels A and B are bi-directional channels.
DS80PCI102
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7 Detailed Description
7.1 Overview
The DS80PCI102 provides input CTLE and output De-emphasis equalization for lossy printed circuit board trace
and cables. The DS80PCI102 operates in three modes: Pin Control Mode configuration (ENSMB = 0), SMBus
Slave Mode (ENSMB = 1) for register configurations from host controller or SMBus Master Mode (ENSMB =
Float) for loading the register configurations from an external EEPROM.
7.2 Functional Block Diagram
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7.3 Feature Description
7.3.1 4-Level Input Configuration Guidelines
The 4-level input pins use a resistor divider to help set the four valid levels. There is an internal 30-kΩpullup and
a 60-kΩpulldown connected to the package pin. These resistors, together with the external resistor connection
combine to achieve the desired voltage level. Using the 1-kΩpullup, 1-kΩpulldown, no connect, or 20-kΩ
pulldown provide the optimal voltage levels for each of the four input states.
Table 1. 4-Level Input Voltage
LEVEL SETTING 3.3-V MODE 2.5-V MODE
0 1 kΩto GND 0.1 V 0.08 V
R 20 kΩto GND 0.33 × VIN 0.33 × VDD
F FLOAT 0.67 × VIN 0.67 × VDD
1 1 kΩto VDD/VIN VIN 0.05 V VDD 0.04 V
Typical 4-level input thresholds:
Level 1 to 2 = 0.2 VIN or VDD
Level 2 to 3 = 0.5 VIN or VDD
Level 3 to 4 = 0.8 VIN or VDD
To minimize the start-up current associated with the integrated 2.5-V regulator, the 1-kΩpullup and pulldown
resistors are recommended. If several 4-level inputs require the same setting, it is possible to combine two or
more 1-kΩresistors into a single lower value resistor. As an example; combining two inputs with a single 500-Ω
resistor is a good way to save board space. For the 20 kΩto GND, this should also scale to 10 kΩ.
Table 2. Equalizer Settings(1)
EQA1 EQA0 dB at dB at dB at
LEVEL EQ 8 BITS [7:0] SUGGESTED USE
EQB1 EQB0 1.25 GHz 2.5 GHz 4 GHz
1 0 0 0000 0000 = 0x00 2.1 3.7 4.9 FR4 < 5 inch trace
2 0 R 0000 0001 = 0x01 3.4 5.8 7.9 FR4 5 inch 5–mil trace
3 0 Float 0000 0010 = 0x02 4.8 7.7 9.9 FR4 5 inch 4–mil trace
4 0 1 0000 0011 = 0x03 5.9 8.9 11.0 FR4 10 inch 5–mil trace
5 R 0 0000 0111 = 0x07 7.2 11.2 14.3 FR4 10 inch 4–mil trace
6 R R 0001 0101 = 0x15 6.1 11.4 14.6 FR4 15 inch 4–mil trace
7 R Float 0000 1011 = 0x0B 8.8 13.5 17.0 FR4 20 inch 4–mil trace
8 R 1 0000 1111 = 0x0F 10.2 15.0 18.5 FR4 25 to 30 inch 4–mil trace
9 Float 0 0101 0101 = 0x55 7.5 12.8 18.0 FR4 30 inch 4–mil trace
10 Float R 0001 1111 = 0x1F 11.4 17.4 22.0 FR4 35 inch 4–mil trace
11 Float Float 0010 1111 = 0x2F 13.0 19.7 24.4 10 m, 30-awg cable
12 Float 1 0011 1111 = 0x3F 14.2 21.1 25.8
13 1 0 1010 1010 = 0xAA 13.8 21.7 27.4
14 1 R 0111 1111 = 0x7F 15.6 23.5 29.0 10 m 12 m cable
15 1 Float 1011 1111 = 0xBF 17.2 25.8 31.4
16 1 1 1111 1111 = 0xFF 18.4 27.3 32.7
(1) The suggested equalizer CTLE settings are based on 0 dB of TX preshoot/de-emphasis. In PCIe Gen 3 applications which use TX
preshoot/de-emphasis, the CTLE should be set to a lower boost setting to optimize the RX eye opening.
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Table 3. Output Voltage and De-Emphasis Settings
DEMA
LEVEL VOD_SEL VOD (Vp-p) DEM (dB)(1) SUGGESTED USE
DEMB
1 0 0 0.7 0 FR4 < 5 inch 4–mil trace
2 0 R 0.7 - 6 FR4 12 inch 4–mil trace
3 0 Float 0.7 - 3.5 FR4 10 inch 4–mil trace
4 0 1 0.7 - 9 FR4 15 inch 4–mil trace
5 R 0 1.2 0 FR4 < 5 inch 4–mil trace
6 R R 1.2 - 6 FR4 12 inch 4–mil trace
7 R Float 1.2 - 3.5 FR4 10 inch 4–mil trace
8 R 1 1.2 - 9 FR4 15 inch 4–mil trace
9 Float 0 1.0 0 FR4 < 5 inch 4–mil trace
10 Float R 1.0 - 6 FR4 15 inch 4–mil trace
11 Float Float 1.0 - 3.5 FR4 10 inch 4–mil trace
12 Float 1 1.0 - 9 FR4 20 inch 4–mil trace
13 1 0 1.1 0 FR4 < 5 inch 4–mil trace
14 1 R 1.1 - 1.5 FR4 5 inch 4–mil trace
15 1 Float 1.3 - 1.5 FR4 5 inch 4–mil trace
16 1 1 1.3 - 3.5 FR4 10 inch 4–mil trace
(1) The VOD output amplitude and DEM de-emphasis levels are set with the DEMA/B[1:0] pins.
The de-emphasis levels are available in GEN1, GEN2, and GEN 3 modes when RATE = Float.
Table 4. RX-Detect Settings
PRSNT(1) RXDET SMBus REG INPUT COMMENTS
(PIN 52) (PIN 22) BIT[3:2] TERMINATION
0 0 00 Hi-Z Manual RX-Detect, input is high-impedance mode
0 Tie 20 kΩ01 Pre Detect: Hi-Z Auto RX-Detect, outputs test every 12 ms for 600 ms
to GND Post Detect: 50 Ωthen stops; termination is hi-Z until detection; once
detected input termination is 50 Ω
Reset function by pulsing PRSNT high for 5 µs then low
again
0 Float 10 Pre Detect: Hi-Z Auto RX-Detect, outputs test every 12 ms until detection
(Default) Post Detect: 50 Ωoccurs; termination is hi-Z until detection; once detected
input termination is 50 Ω
Reset function by pulsing PRSNT high for 5 µs then low
again
0 1 11 50 ΩManual RX-Detect, input is 50 Ω
1 X Hi-Z Power-down mode, input is high impedance, output
drivers are disabled
Used to reset RX-Detect State Machine when held high
for 5 µs
(1) In SMBus Slave Mode, the Rx Detect State Machine can be manually reset in software by overriding the device PRSNT function. This is
accomplished by setting the Override RXDET bit (Reg 0x02[7]) and then toggling the RXDET Value bit (Reg 0x02[6]). See Table 10 for
more information about resetting the Rx Detect State Machine.
Table 5. Signal Detect Threshold Level(1)
SD_TH SMBus REG BIT [3:2] AND [1:0] ASSERT LEVEL (TYP) DEASSERT LEVEL (TYP)
0 10 210 mVp-p 150 mVp-p
R 01 160 mVp-p 100 mVp-p
F (default) 00 180 mVp-p 110 mVp-p
1 11 190 mVp-p 130 mVp-p
(1) VDD = 2.5 V, 25°C, and 0101 pattern at 8 Gbps.
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7.4 Device Functional Modes
The DS80PCI102 is a low power media compensation 1 lane repeater optimized for PCI Express Gen 1/2 and 3.
The DS80PCI102 compensates for lossy FR-4 printed circuit board backplanes and balanced cables. The
DS80PCI102 operates in 3 modes: Pin Control Mode (ENSMB = 0), SMBus Slave Mode (ENSMB = 1) and
SMBus Master Mode (ENSMB = float) to load register information from external EEPROM; refer to Table 8 for
additional information.
7.4.1 Pin Control Mode
When in pin mode (ENSMB = 0), equalization and de-emphasis can be selected through pin for each side
independently. When de-emphasis is asserted VOD is automatically adjusted per the De- Emphasis table below.
The RXDET pins provides automatic and manual control for input termination (50 Ωor > 50 kΩ). RATE setting is
also pin controllable with pin selections (Gen 1/2, auto detect and Gen 3). The receiver electrical idle detect
threshold is also adjustable through the SD_TH pin.
7.4.2 SMBUS Mode
When in SMBus mode (ENSMB = 1), the VOD (output amplitude), equalization, de-emphasis, and termination
disable features are all programmable on a individual lane basis, instead of grouped by A or B as in the pin mode
case. Upon assertion of ENSMB, the EQx and DEMx functions revert to register control immediately. The EQx
and DEMx pins are converted to AD0-AD3 SMBus address inputs. The other external control pins (RATE,
RXDET and SD_TH) remain active unless their respective registers are written to and the appropriate override bit
is set, in which case they are ignored until ENSMB is driven low (pin mode). On power-up and when ENSMB is
driven low all registers are reset to their default state. If PRSNT is asserted while ENSMB is high, the registers
retain their current state.
Equalization settings accessible through the pin controls were chosen to meet the needs of most PCIe
applications. If additional fine tuning or adjustment is needed, additional equalization settings can be accessed
through the SMBus registers. Each input has a total of 256 possible equalization settings. The 4-Level Input
Configuration Guidelines show the 16 setting when the device is in pin mode. When using SMBus mode, the
equalization, VOD and de-emphasis levels are set by registers.
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7.5 Programming
7.5.1 System Management Bus (SMBus) and Configuration Registers
The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. ENSMB = 1 kΩ
to VDD to enable SMBus slave mode and allow access to the configuration registers.
The DS80PCI102 has the AD[3:0] inputs in SMBus mode. These pins are the user set SMBUS slave address
inputs. The AD[3:0] pins have internal pulldown. When left floating or pulled low the AD[3:0] = 0000'b, the device
default address byte is 0xB0. Based on the SMBus 2.0 specification, the DS80PCI102 has a 7-bit slave address.
The LSB is set to 0'b (for a WRITE). The device supports up to 16 address byte, which can be set with the
AD[3:0] inputs. Below are the 16 addresses.
Table 6. Device Slave Address Bytes
AD[3:0] SETTINGS ADDRESS BYTES (HEX) 7-BIT SLAVE ADDRESS (HEX)
0000 B0 58
0001 B2 59
0010 B4 5A
0011 B6 5B
0100 B8 5C
0101 BA 5D
0110 BC 5E
0111 BE 5F
1000 C0 60
1001 C2 61
1010 C4 62
1011 C6 63
1100 C8 64
1101 CA 65
1110 CC 66
1111 CE 67
The SDA/SCL pins are 3.3-V tolerant, but are not 5-V tolerant. An external pullup resistor is required on the SDA
and SCL line. The resistor value can be from 2 kΩto 5 kΩdepending on the voltage, loading, and speed.
7.5.2 Transfer of Data Through the SMBus
During normal operation the data on SDA must be stable during the time when SCL is High.
There are three unique states for the SMBus:
START: A high-to-low transition on SDA while SCL is High indicates a message START condition.
STOP: A low-to-high transition on SDA while SCL is High indicates a message STOP condition.
IDLE: If SCL and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if they
are High for a total exceeding the maximum specification for tHIGH then the bus will transfer to the IDLE state.
7.5.3 SMBus Transactions
The device supports WRITE and READ transactions. See Table 10 for register address, type (Read/Write, Read
Only), default value and function information.
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P
A
2A
1A
00S + A3
Slave Address
a
c
k01234567
Device
ID
Register Address
a
c
kSA
2A
1A
01 01234567 a
c
k
Slave Address
a
c
k
Data
+ A3
Device
ID
DS80PCI102
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7.5.4 Writing a Register
To write a register, the following protocol is used (see SMBus 2.0 specification).
1. The Host drives a START condition, the 7-bit SMBus address, and a 0 indicating a WRITE.
2. The Device (Slave) drives the ACK bit (0).
3. The Host drives the 8-bit Register Address.
4. The Device drives an ACK bit (0).
5. The Host drive the 8-bit data byte.
6. The Device drives an ACK bit (0).
7. The Host drives a STOP condition.
The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may
now occur.
7.5.5 Reading a Register
To read a register, the following protocol is used (see SMBus 2.0 specification).
1. The Host drives a START condition, the 7-bit SMBus address, and a 0 indicating a WRITE.
2. The Device (Slave) drives the ACK bit (0).
3. The Host drives the 8-bit Register Address.
4. The Device drives an ACK bit (0).
5. The Host drives a START condition.
6. The Host drives the 7-bit SMBus Address, and a 1 indicating a READ.
7. The Device drives an ACK bit 0.
8. The Device drives the 8-bit data value (register contents).
9. The Host drives a NACK bit 1 indicating end of the READ transfer.
10. The Host drives a STOP condition.
The READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may now
occur.
See Table 10 for more information.
Figure 7. Typical SMBus Write Operation
7.5.6 EEPROM Programming
The DS80PCI102 supports reading directly from an external EEPROM device by implementing SMBus Master
mode. When using the SMBus master mode, the DS80PCI102 will read directly from specific location in the
external EEPROM. When designing a system for using the external EEPROM, the following guidelines should be
followed:
Set the DS80PCI102 into SMBus Master Mode.
ENSMB (PIN 3) = Float
The external EEPROM device must support 1-MHz operation.
The external EEPROM device address byte must be 0xA0.
Set the AD[3:0] inputs for SMBus address byte. When the AD[3:0] = 0000'b, the device address byte is 0xB0.
The device address can be set with the use of the AD[3:0] input up to 16 different addresses. Use the
example below to set each of the SMBus addresses.
AD[3:0] = 0001'b, the device address byte is 0xB2
AD[3:0] = 0010'b, the device address byte is 0xB4
AD[3:0] = 0011'b, the device address byte is 0xB6
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1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
:1000000000002000000407002FED4002FED4002FC4
:10001000AD4002FAD400005F568005F5A8005F5AE9
:100020008005F5A800005454F100000000000000A8
:1000300000000000000000000000000000000000C0
:1000400000000000000000000000000000000000B0
:1000500000000000000000000000000000000000A0
:100060000000000000000000000000000000000090
:100070000000000000000000000000000000000080
:100080000000000000000000000000000000000070
:100090000000000000000000000000000000000060
:1000A0000000000000000000000000000000000050
:1000B0000000000000000000000000000000000040
:1000C0000000000000000000000000000000000030
:1000D0000000000000000000000000000000000020
:1000E0000000000000000000000000000000000010
:1000F0000000000000000000000000000000000000
:00000001FF
CRC-8 based on 40 bytes of
data in this shaded area Insert the CRC value here
CRC Polynomial = 0x07 MAX EEPROM Burst = 32
DS80PCI102
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AD[3:0] = 0100'b, the device address byte is 0xB8
The master implementation in the DS80PCI102 supports multiple devices reading from one EEPROM. When
tying multiple devices to the SDA and SCL pins, use these guidelines:
Use adjacent SMBus addresses for the 4 devices
Use a pullup resistor on SDA; value = 4.7 kΩ
Use a pullup resistor on SCL; value = 4.7 kΩ
Daisy-chain READEN (Pin 17) and DONE (Pin18) from one device to the next device in the sequence.
1. Tie READEN of the first device in the chain (U1) to GND
2. Tie DONE of U1 to READEN of U2
3. Tie DONE of U2 to READEN of U3
4. Tie DONE of U3 to READEN of U4
5. Optional: Tie DONE of U4 to a LED to show each of the devices have been loaded successfully
7.5.6.1 Master EEPROM Programming
The following example represents a 2 kbits (256 × 8-bit) EEPROM in hex format for the DS80PCI102 device. The
first 3 bytes of the EEPROM always contain a header common and necessary to control initialization of all
devices connected to the same SMBus line. There is a CRC enable flag to enable or disable CRC checking.
There is a MAP bit to flag the presence of an address map that specifies the configuration data start in the
EEPROM. If the MAP bit is not present, the configuration data start address immediately follows the 3-byte base
header. A bit to indicate an EEPROM size > 256 bytes is necessary to properly address the EEPROM. There are
37 bytes of data size for each DS80PCI102 device. For more details about EEPROM programming and Master
mode, refer to SNLA228.
Figure 8. Typical EEPROM Data Set
NOTE
The maximum EEPROM size supported is 8kbits (1024 × 8 bits).
The CRC-8 calculation is performed on the first 3 bytes of header information plus the 37 bytes of data for the
DS80PCI102, or 40 bytes in total. The result of this calculation is placed immediately after the DS80PCI102 data
in the EEPROM, which ends with "5454". The CRC-8 in the DS80PCI102 uses a polynomial = x8+ x2+x+1.
There are two pins that provide unique functions in SMBus Master mode:
DONE
READEN
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OUTA+
OUTA-
OUTB+
VDD_SEL
VIN
18
INB+
INB-
17
14
13
16
RATE
READEN#
DONE#
SD_TH
INA+
INA-
OUTB-
SMBUS AND
CONTROL
15
VDD
24
23
22
21
20
19
11
12
8
10
9
7
AD2
ENSMB
1
2
5
6
3
SCL
AD3
SDA
4
VDD
PRSNT#
AD1
AD0
OUTA+
OUTA-
OUTB+
VDD_SEL
VIN
18
INB+
INB-
17
14
13
16
RATE
READEN#
DONE#
SD_TH
INA+
INA-
OUTB-
SMBUS AND
CONTROL
15
VDD
24
23
22
21
20
19
11
12
8
10
9
7
AD2
ENSMB
1
2
5
6
3
SCL
AD3
SDA
4
VDD
PRSNT#
AD1
AD0
OUTA+
OUTA-
OUTB+
VDD_SEL
VIN
18
INB+
INB-
17
14
13
16
RATE
READEN#
DONE#
SD_TH
INA+
INA-
OUTB-
SMBUS AND
CONTROL
15
VDD
24
23
22
21
20
19
11
12
8
10
9
7
AD2
ENSMB
1
2
5
6
3
SCL
AD3
SDA
4
VDD
PRSNT#
AD1
AD0
SDA
SCL
AD0
AD1
AD2
GND
GND
GND
One or both of these lines
should float for EEPROM
larger than 256 bytes.
EEPROM
SDA
SCL
From External
SMBus Master
3.3V
FLOAT FLOAT FLOAT
Note: Set AD[3:0] of each DS80PCI102 to unique SMBus Address.
GND
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When the DS80PCI102 is powered up in SMBus master mode, it reads its configuration from the external
EEPROM when the READEN pin goes low. When the DS80PCI102 is finished reading its configuration from the
external EEPROM, it drives the DONE pin low. In applications where there is more than one DS80PCI102 on the
same SMBus, bus contention can result if more than one DS80PCI102 tries to take control of the SMBus at the
same time. The READEN and DONE pins prevent this bus contention. The system should be designed so that
the READEN pin from one DS80PCI102 in the system is driven low on power-up. This DS80PCI102 will take
command of the SMBus on power-up and will read its initial configuration from the external EEPROM. When it is
finished reading its configuration, it will drive the DONE pin low. This pin should be connected to the READEN
pin of another DS80PCI102. When this second DS80PCI102 senses its READEN pin driven low, it will take
command of the SMBus and read its initial configuration from the external EEPROM, after which it will set its
DONE pin low. By connecting the DONE pin of each DS80PCI102 to the READEN pin of the next DS80PCI102,
each DS80PCI102 can read its initial configuration from the EEPROM without causing bus contention.
Figure 9. Typical Multi-Device EEPROM Connection Diagram
7.5.6.2 EEPROM Address Mapping
A detailed EEPROM Address Mapping for a single device is shown in Table 7. For instances where multiple
devices are written to EEPROM, the device starting address definitions align starting with Byte 0x03. A register
map overview for a multi-device EEPROM address map is shown in Table 8.
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7.6 Register Maps
Table 7. Single Device with Default Value
EEPROM Address Byte BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0
Address Map EEPROM > 256 DEVICE DEVICE DEVICE DEVICE
Description CRC_EN Reserved
Present Bytes COUNT[3] COUNT[2] COUNT[1] COUNT[0]
0x00
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
0x01
Default 0x00 0 0 0 0 0 0 0 0
Value
Max EEPROM Max EEPROM Max EEPROM Max EEPROM Max EEPROM Max EEPROM Max EEPROM Max EEPROM
Description Burst size[7] Burst size[6] Burst size[5] Burst size[4] Burst size[3] Burst size[2] Burst size[1] Burst size[0]
0x02
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved PWDN CH B PWDN CH A
SMBus Register 0x01[7] 0x01[6] 0x01[5] 0x01[4] 0x01[3] 0x01[2] 0x01[1] 0x01[0]
0x03
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved PWDN_Inputs PWDN_Osc Override PRST Reserved Reserved Reserved
SMBus Register 0x02[5] 0x02[4] 0x02[3] 0x02[2] 0x02[0] 0x04[7] 0x04[6] 0x04[5]
0x04
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Ovrd IDLE_TH Reserved
SMBus Register 0x04[4] 0x04[3] 0x04[2] 0x04[1] 0x04[0] 0x06[4] 0x08[6] 0x08[5]
0x05
Default 0x04 0 0 0 0 0 1 0 0
Value
Description Reserved Ovrd RXDET Ovrd RATE Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x08[4] 0x08[3] 0x08[2] 0x08[1] 0x08[0] 0x0B[6] 0x0B[5] 0x0B[4]
0x06
Default 0x07 0 0 0 0 0 1 1 1
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved RXDET_A_1 RXDET_A_0
SMBus Register 0x0B[3] 0x0B[2] 0x0B[1] 0x0B[0] 0x0E[5] 0x0E[4] 0x0E[3] 0x0E[2]
0x07
Default 0x00 0 0 0 0 0 0 0 0
Value
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Table 7. Single Device with Default Value (continued)
EEPROM Address Byte BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0
Description CHA_EQ[7] CHA_EQ[6] CHA_EQ[5] CHA_EQ[4] CHA_EQ[3] CHA_EQ[2] CH0_EQ[1] CH0_EQ[0]
SMBus Register 0x0F[7] 0x0F[6] 0x0F[5] 0x0F[4] 0x0F[3] 0x0F[2] 0x0F[1] 0x0F[0]
0x08
Default 0x2F 0 0 1 0 1 1 1 1
Value
Description CHA_Sel SCP CHA_Sel RATE Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x10[7] 0x10[6] 0x10[5] 0x10[4] 0x10[3] 0x10[2] 0x10[1] 0x10[0]
0x09
Default 0xED 1 1 1 0 1 1 0 1
Value
Description CHA_DEM[2] CHA_DEM[1] CHA_DEM[0] Reserved CHA_Idle_ThA[1] CHA_Idle_ThA[0] CHA_Idle_ThD[1] CHA_Idle_ThD[0]
SMBus Register 0x11[2] 0x11[1] 0x11[0] 0x12[7] 0x12[3] 0x12[2] 0x12[1] 0x12[0]
0x0A
Default 0x40 0 1 0 0 0 0 0 0
Value
Description Reserved Reserved RXDET_B_1 RXDET_B_0 CHB_EQ[7] CHB_EQ[6] CHB_EQ[5] CHB_EQ[4]
SMBus Register 0x15[5] 0x15[4] 0x15[3] 0x15[2] 0x16[7] 0x16[6] 0x16[5] 0x16[4]
0x0B
Default 0x02 0 0 0 0 0 0 1 0
Value
Description CHB_EQ[3] CHB_EQ[2] CHB_EQ[1] CHB_EQ[0] CHB_Sel SCP CHB_Sel RATE Reserved Reserved
SMBus Register 0x16[3] 0x16[2] 0x16[1] 0x16[0] 0x17[7] 0x17[6] 0x17[5] 0x17[4]
0x0C
Default 0xFE 1 1 1 1 1 1 1 0
Value
Description Reserved Reserved Reserved Reserved CHB_DEM[2] CHB_DEM[1] CHB_DEM[0] Reserved
SMBus Register 0x17[3] 0x17[2] 0x17[1] 0x17[0] 0x18[2] 0x18[1] 0x18[0] 0x19[7]
0x0D
Default 0xD4 1 1 0 1 0 1 0 0
Value
Description CHB_Idle_ThA[1] CHB_Idle_ThA[0] CHB_Idle_ThD[1] CHB_Idle_ThD[0] Reserved Reserved Reserved Reserved
SMBus Register 0x19[3] 0x19[2] 0x19[1] 0x19[0] 0x1C[5] 0x1C[4] 0x1C[3] 0x1C[2]
0x0E
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x1D[7] 0x1D[6] 0x1D[5] 0x1D[4] 0x1D[3] 0x1D[2] 0x1D[1] 0x1D[0]
0x0F
Default 0x2F 0 0 1 0 1 1 1 1
Value
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Table 7. Single Device with Default Value (continued)
EEPROM Address Byte BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x1E[7] 0x1E[6] 0x1E[5] 0x1E[4] 0x1E[3] 0x1E[2] 0x1E[1] 0x1E[0]
0x10
Default 0xAD 1 0 1 0 1 1 0 1
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x1F[2] 0x1F[1] 0x1F[0] 0x20[7] 0x20[3] 0x20[2] 0x20[1] 0x20[0]
0x11
Default 0x40 0 1 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x23[5] 0x23[4] 0x23[3] 0x23[2] 0x24[7] 0x24[6] 0x24[5] 0x24[4]
0x12
Default 0x02 0 0 0 0 0 0 1 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved CHA_VOD[2]
SMBus Register 0x24[3] 0x24[2] 0x24[1] 0x24[0] 0x25[7] 0x25[6] 0x25[5] 0x25[4]
0x13
Default 0xFA 1 1 1 1 1 0 1 0
Value
Description CHA_VOD[1] CHA_VOD[0] Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x25[3] 0x25[2] 0x25[1] 0x25[0] 0x26[2] 0x26[1] 0x26[0] 0x27[7]
0x14
Default 0xD4 1 1 0 1 0 1 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x27[3] 0x27[2] 0x27[1] 0x27[0] 0x28[6] 0x28[5] 0x28[4] 0x28[3]
0x15
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x28[2] 0x28[1] 0x28[0] 0x2B[5] 0x2B[4] 0x2B[3] 0x2B[2] 0x2C[7]
0x16
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x2C[6] 0x2C[5] 0x2C[4] 0x2C[3] 0x2C[2] 0x2C[1] 0x2C[0] 0x2D[7]
0x17
Default 0x5F 0 1 0 1 1 1 1 1
Value
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Table 7. Single Device with Default Value (continued)
EEPROM Address Byte BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0
Description Reserved Reserved CHB_VOD[2] CHB_VOD[1] CHB_VOD[0] Reserved Reserved Reserved
SMBus Register 0x2D[6] 0x2D[5] 0x2D[4] 0x2D[3] 0x2D[2] 0x2D[1] 0x2D[0] 0x2E[2]
0x18
Default 0x5A 0 1 0 1 1 0 1 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x2E[1] 0x2E[0] 0x2F[7] 0x2F[3] 0x2F[2] 0x2F[1] 0x2F[0] 0x32[5]
0x19
Default 0x80 1 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x32[4] 0x32[3] 0x32[2] 0x33[7] 0x33[6] 0x33[5] 0x33[4] 0x33[3]
0x1A
Default 0x05 0 0 0 0 0 1 0 1
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x33[2] 0x33[1] 0x33[0] 0x34[7] 0x34[6] 0x34[5] 0x34[4] 0x34[3]
0x1B
Default 0xF5 1 1 1 1 0 1 0 1
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x34[2] 0x34[1] 0x34[0] 0x35[2] 0x35[1] 0x35[0] 0x36[7] 0x36[3]
0x1C
Default 0xA8 1 0 1 0 1 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x36[2] 0x36[1] 0x36[0] 0x39[5] 0x39[4] 0x39[3] 0x39[2] 0x3A[7]
0x1D
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x3A[6] 0x3A[5] 0x3A[4] 0x3A[3] 0x3A[2] 0x3A[1] 0x3A[0] 0x3B[7]
0x1E
Default 0x5F 0 1 0 1 1 1 1 1
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x3B[6] 0x3B[5] 0x3B[4] 0x3B[3] 0x3B[2] 0x3B[1] 0x3B[0] 0x3C[2]
0x1F
Default 0x5A 0 1 0 1 1 0 1 0
Value
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Table 7. Single Device with Default Value (continued)
EEPROM Address Byte BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x3C[1] 0x3C[0] 0x3D[7] 0x3D[3] 0x3D[2] 0x3D[1] 0x3D[0] 0x40[5]
0x20
Default 0x80 1 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x40[4] 0x40[3] 0x40[2] 0x41[7] 0x41[6] 0x41[5] 0x41[4] 0x41[3]
0x21
Default 0x05 0 0 0 0 0 1 0 1
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x41[2] 0x41[1] 0x41[0] 0x42[7] 0x42[6] 0x42[5] 0x42[4] 0x42[3]
0x22
Default 0xF5 1 1 1 1 0 1 0 1
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x42[2] 0x42[1] 0x42[0] 0x43[2] 0x43[1] 0x43[0] 0x44[7] 0x44[3]
0x23
Default 0xA8 1 0 1 0 1 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x44[2] 0x44[1] 0x44[0] 0x47[3] 0x47[2] 0x47[1] 0x47[0] 0x48[7]
0x24
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x48[6] 0x4C[7] 0x4C[6] 0x4C[5] 0x4C[4] 0x4C[3] 0x4C[0] 0x59[0]
0x25
Default 0x00 0 0 0 0 0 0 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x5A[7] 0x5A[6] 0x5A[5] 0x5A[4] 0x5A[3] 0x5A[2] 0x5A[1] 0x5A[0]
0x26
Default 0x54 0 1 0 1 0 1 0 0
Value
Description Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x5B[7] 0x5B[6] 0x5B[5] 0x5B[4] 0x5B[3] 0x5B[2] 0x5B[1] 0x5B[0]
0x27
Default 0x54 0 1 0 1 0 1 0 0
Value
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Table 8. Multi-Device EEPROM Register Map Overview(1)(2)(3)(4)
Addr Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 BIt 0
0 CRC EN Address Map EEPROM > 256 Reserved COUNT[3] COUNT[2] COUNT[1] COUNT[0]
Bytes
Header 1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
2 EE Burst[7] EE Burst[6] EE Burst[5] EE Burst[4] EE Burst[3] EE Burst[2] EE Burst[1] EE Burst[0]
Device 0 3 CRC[7] CRC[6] CRC[5] CRC[4] CRC[3] CRC[2] CRC[1] CRC[0]
Info 4 EE AD0 [7] EE AD0 [6] EE AD0 [5] EE AD0 [4] EE AD0 [3] EE AD0 [2] EE AD0 [1] EE AD0 [0]
Device 1 5 CRC[7] CRC[6] CRC[5] CRC[4] CRC[3] CRC[2] CRC[1] CRC[0]
Info 6 EE AD1 [7] EE AD1 [6] EE AD1 [5] EE AD1 [4] EE AD1 [3] EE AD1 [2] EE AD1 [1] EE AD1 [0]
Device 2 7 CRC[7] CRC[6] CRC[5] CRC[4] CRC[3] CRC[2] CRC[1] CRC[0]
Info 8 EE AD2 [7] EE AD2 [6] EE AD2 [5] EE AD2 [4] EE AD2 [3] EE AD2 [2] EE AD2 [1] EE AD2 [0]
Device 3 9 CRC[7] CRC[6] CRC[5] CRC[4] CRC[3] CRC[2] CRC[1] CRC[0]
Info 10 EE AD3 [7] EE AD3 [6] EE AD3 [5] EE AD3 [4] EE AD3 [3] EE AD3 [2] EE AD3 [1] EE AD3 [0]
Device 0 11 Reserved Reserved Reserved Reserved Reserved Reserved PWDN CH B PWDN CH A
Addr 3
Device 0 12 Reserved Reserved PDWN Inp PDWN OSC Ovrd PRST Reserved Reserved Reserved
Addr 4
Device 0 46 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 38
Device 0 47 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 39
Device 1 48 Reserved Reserved Reserved Reserved Reserved Reserved PWDN CH B PWDN CH A
Addr 3
Device 1 49 Reserved Reserved PDWN Inp PDWN OSC Ovrd PRST Reserved Reserved Reserved
Addr 4
Device 1 83 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 38
Device 1 84 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 39
Device 2 85 Reserved Reserved Reserved Reserved Reserved Reserved PWDN CH B PWDN CH A
Addr 3
Device 2 86 Reserved Reserved PDWN Inp PDWN OSC Ovrd PRST Reserved Reserved Reserved
Addr 4
(1) CRC EN = 1; Address Map = 1
(2) EEPROM > 256 Bytes = 0
(3) COUNT[3:0] = 0011'b
(4) Multiple DS80PCI102 devices may point at the same address space if they have identical programming values.
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Table 8. Multi-Device EEPROM Register Map Overview(1)(2)(3)(4) (continued)
Addr Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 BIt 0
Device 2 120 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 38
Device 2 121 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 39
Device 3 122 Reserved Reserved Reserved Reserved Reserved Reserved PWDN CH B PWDN CH A
Addr 3
Device 3 123 Reserved Reserved PDWN Inp PDWN OSC Ovrd PRST Reserved Reserved Reserved
Addr 4
Device 3 157 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 38
Device 3 158 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Addr 39
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Table 9. Multi DS80PCI102 EEPROM Data
EEPROM EEPROM
Address (Hex) Comments
Address Data
0 00 0x43 CRC_EN = 0, Address Map = 1, Device Count = 3 (Devices 0, 1, 2, and 3)
1 01 0x00
2 02 0x08 EEPROM Burst Size
3 03 0x00 CRC not used
4 04 0x0B Device 0 Address Location
5 05 0x00 CRC not used
6 06 0x30 Device 1 Address Location
7 07 0x00 CRC not used
8 08 0x30 Device 2 Address Location
9 09 0x00 CRC not used
10 0A 0x0B Device 3 Address Location
11 0B 0x00 Begin Device 0 and Device 3 - Address Offset 3
12 0C 0x00
13 0D 0x04
14 0E 0x07
15 0F 0x00
16 10 0x2F Default EQ CHA
17 11 0xED
18 12 0x40
19 13 0x02 Default EQ CHB
20 14 0xFE Default EQ CHB
21 15 0xD4
22 16 0x00
23 17 0x2F
24 18 0xAD
25 19 0x40
26 1A 0x02
27 1B 0xFA PCI102 CHA VOD = 1000 mVpp
28 1C 0xD4 PCI102 CHA VOD = 1000 mVpp
29 1D 0x01
30 1E 0x80
31 1F 0x5F
32 20 0x56 PCI102 CHB VOD = 1000 mVpp
33 21 0x80
34 22 0x05
35 23 0xF5
36 24 0xA8
37 25 0x00
38 26 0x5F
39 27 0x5A
40 28 0x80
41 29 0x05
42 2A 0xF5
43 2B 0xA8
44 2C 0x00
45 2D 0x00
46 2E 0x54
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Table 9. Multi DS80PCI102 EEPROM Data (continued)
EEPROM EEPROM
Address (Hex) Comments
Address Data
47 2F 0x54 End Device 0 and Device 3 - Address Offset 39
48 30 0x00 Begin Device 1 and Device 2 - Address Offset 3
49 31 0x00
50 32 0x04
51 33 0x07
52 34 0x00
53 35 0x2F Default EQ CHA
54 36 0xED
55 37 0x40
56 38 0x02 Default EQ CHB
57 39 0xFE Default EQ CHB
58 3A 0xD4
59 3B 0x00
60 3C 0x2F
61 3D 0xAD
62 3E 0x40
63 3F 0x02
64 40 0xFA PCI102 CHA VOD = 1000 mVpp
65 41 0xD4 PCI102 CHA VOD = 1000 mVpp
66 42 0x01
67 43 0x80
68 44 0x5F
69 45 0x56 PCI102 CHB VOD = 1000 mVpp
70 46 0x80
71 47 0x05
72 48 0xF5
73 49 0xA8
74 4A 0x00
75 4B 0x5F
76 4C 0x5A
77 4D 0x80
78 4E 0x05
79 4F 0xF5
80 50 0xA8
81 51 0x00
82 52 0x00
83 53 0x54
84 54 0x54 End Device 1 and Device 2 - Address Offset 39
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Table 10. SMBus Register Map
Register EEPROM
Address Bit Field Type Default Description
Name Bit
7 Reserved R/W Reserved
6:3 I2C Address [3:0] R SMBus strap observation
Device EEPROM reading 1: Device completed the read from external
0x00 Address 2 R 0x00
done EEPROM
Observation 1 Reserved RWSC Reserved
0 Reserved RWSC Reserved
7:2 Reserved Reserved
[1]: Powerdown Channel B (1); Normal
0x01 Control 1 R/W 0x00 Yes Operation (0)
1:0 PWDN A/B [0]: Powerdown Channel A (1); Normal
Operation (0)
1 = Override Automatic Rx Detect State
7 Override RXDET Machine Reset
1 = Set Rx Detect State Machine Reset
6 RXDET Value 0 = Clear Rx Detect State Machine Reset
5:4 Reserved Yes Reserved
0x02 Control 2 R/W 0x00
3 PWDN Inputs Yes Reserved
2 PWDN Oscillator Yes Reserved
1 Reserved Reserved
1: Enables Reg 0x01[1:0]
0 Override PRSNT Yes 0: Normal Operation
0x03 Reserved 7:0 Reserved R/W 0x00 Reserved
0x04 Reserved 7:0 Reserved R/W 0x00 Yes Reserved
0x05 Reserved 7:0 Reserved R/W 0x00 Reserved
7:5 Reserved Reserved
4 Reserved Yes Reserved
1 = Enables SMBus Slave Mode Register
Slave Control
0x06 Register R/W 0x10
3 Register Enable Note: To change VOD, DEM, and EQ of the
Control channels in slave mode, this bit must be set
to 1.
2:0 Reserved Reserved
7 Reserved Reserved
Self clearing reset for registers.
6 Reset Regs Writing a [1] will return register settings to
Digital Reset default values.
0x07 R/W 0x01
and Control Reset SMBus Self clearing reset to SMBus master state
5Master machine
4:0 Reserved Reserved
7 Reserved Reserved
[1]: Override by Channel - see Reg 0x12 and
Override Idle
6 Yes 0x19
Threshold [0]: SD_TH pin control
5:4 Reserved Yes Set bits to 0
[1]: Force RXDET by Channel - see Reg 0x0E
0x08 Pin Override R/W 0x00
3 Override RXDET Yes and 0x15
[0]: Normal Operation
[1]: Override by Channel - see Reg 0x10 and
2 Override RATE Yes 0x17
[0]: Normal Operation
1:0 Reserved Yes Reserved
0x09 Reserved 7:0 Reserved R/W 0x00 Reserved
0x0A Reserved 7:0 Reserved R 0x00 Reserved
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Table 10. SMBus Register Map (continued)
Register EEPROM
Address Bit Field Type Default Description
Name Bit
7 Reserved R/W Reserved
0x0B Reserved 0x70
6:0 Reserved R/W Yes Reserved
0x0C Reserved 7:0 Reserved R/W 0x00 Reserved
0x0D Reserved 7:0 Reserved R/W 0x00 Reserved
7:6 Reserved Reserved
5:4 Reserved Yes Reserved
00: Input is hi-Z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times)
CH A then stops; termination is hi-Z until detection;
0x0E RXDET R/W 0x00 once detected input termination is 50 Ω
3:2 RXDET Yes
Control 10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is hi-Z until detection; once
detected input termination is 50 Ω
11: Input is 50 ΩNote: override RXDET pin.
1:0 Reserved Reserved
CH A EQ Control - total of 256 levels
0x0F 7:0 BOOST [7:0] R/W 0x2F Yes
EQ Control See Table 2
1 = Short Circuit Protection ON
7 Sel_scp Yes 0 = Short Circuit Protection OFF
CH A 1 = Select GEN1/2 Mode
6 Sel_RATE Yes
0x10 RATE R/W 0xED 0 = Select GEN3 Mode
Control 5:3 Reserved Yes Reserved
2:0 Reserved Yes Reserved
7 Reserved Reserved
Signal Rate Detected
R00 = GEN1 (2.5G)
6:5 Rate Information 01 = GEN2 (5.0G)
11 = GEN3 (8.0G)
4:3 Reserved Reserved
CH A DEM Control
0x11 0x82
DEM Control 000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
R/W
2:0 DEM [2:0] Yes 011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
7 Reserved Yes Reserved
6:4 Reserved Reserved
Assert Thresholds
Use only if register 0x08 [6] = 1
00 = 180 mV (Default)
3:2 idle_thA[1:0] Yes 01 = 160 mV
CH A 10 = 210 mV
0x12 Idle R/W 0x00 11= 190 mV
Threshold Deassert Thresholds
Use only if register 0x08 [6] = 1
00 = 110 mV (Default)
1:0 idle_thD[1:0] Yes 01 = 100 mV
10 = 150 mV
11= 130 mV
0x13 Reserved 7:0 Reserved R/W 0x00 Reserved
0x14 Reserved 7:0 Reserved R/W 0x00 Reserved
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Table 10. SMBus Register Map (continued)
Register EEPROM
Address Bit Field Type Default Description
Name Bit
7:6 Reserved Reserved
5:4 Reserved Yes Reserved
00: Input is hi-Z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times)
CH B then stops; termination is hi-Z until detection;
0x15 RXDET R/W 0x00 once detected input termination is 50 Ω
3:2 RXDET Yes
Control 10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is hi-Z until detection; once
detected input termination is 50 Ω
11: Input is 50 ΩNote: override RXDET pin.
1:0 Reserved Reserved
CH B EQ Control - total of 256 levels
0x16 7:0 BOOST [7:0] R/W 0x2F Yes
EQ Control See Table 2
1 = Short Circuit Protection ON
7 Sel_scp Yes 0 = Short Circuit Protection OFF
CH B 1 = Select GEN1/2 Mode
6 Sel_RATE Yes
0x17 RATE R/W 0xED 0 = Select GEN3 Mode
Control 5:3 Reserved Yes Reserved
2:0 Reserved Yes Reserved
7 Reserved Reserved
Signal Rate Detected
R00 = GEN1 (2.5G)
6:5 Rate Information 01 = GEN2 (5.0G)
11 = GEN3 (8.0G)
4:3 Reserved Reserved
CH B DEM Control
0x18 0x02
DEM Control 000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
R/W
2:0 DEM [2:0] Yes 011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
7 Reserved Yes Reserved
6:4 Reserved Reserved
Assert Thresholds
Use only if register 0x08 [6] = 1
00 = 180 mV (Default)
3:2 idle_thA[1:0] Yes 01 = 160 mV
CH B 10 = 210 mV
0x19 Idle R/W 0x00 11= 190 mV
Threshold Deassert Thresholds
Use only if register 0x08 [6] = 1
00 = 110 mV (Default)
1:0 idle_thD[1:0] Yes 01 = 100 mV
10 = 150 mV
11= 130 mV
0x1A-0x1B Reserved 7:0 Reserved R/W 0x00 Reserved
7:6 Reserved Reserved
0x1C Reserved 5:2 Reserved R/W 0x00 Yes Reserved
1:0 Reserved Reserved
0x1D Reserved 7:0 Reserved R/W 0x2F Yes Reserved
0x1E Reserved 7:0 Reserved R/W 0xAD Yes Reserved
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Table 10. SMBus Register Map (continued)
Register EEPROM
Address Bit Field Type Default Description
Name Bit
7:3 Reserved Reserved
0x1F Reserved R/W 0x02
2:0 Reserved Yes Reserved
7 Reserved Yes Reserved
0x20 Reserved 6:4 Reserved R/W 0x00 Reserved
3:0 Reserved Yes Reserved
0x21-0x22 Reserved 7:0 Reserved R/W 0x00 Reserved
7:6 Reserved Reserved
0x23 Reserved 5:2 Reserved R/W 0x00 Yes Reserved
1:0 Reserved Reserved
0x24 Reserved 7:0 Reserved R/W 0x2F Yes Reserved
7:5 Reserved Yes Reserved
VOD Control CHA
000: 0.7 V
001: 0.8 V
010: 0.9 V
0x25 CH A VOD 4:2 VOD CHA Control R/W 0xAD Yes 011: 1.0 V (default)
100: 1.1 V
101: 1.2 V
110: 1.3 V
111: 1.4 V
1:0 Reserved Yes Reserved
7:3 Reserved Reserved
0x26 Reserved R/W 0x02
2:0 Reserved Yes Reserved
7 Reserved Yes Reserved
0x27 Reserved 6:4 Reserved R/W 0x00 Reserved
3:0 Reserved Yes Reserved
7 Reserved Reserved
0x28 Idle Control R/W 0x00
6:0 Reserved Yes Reserved
0x29-0x2A Reserved 7:0 Reserved R/W 0x00 Reserved
7:6 Reserved Reserved
0x2B Reserved 5:2 Reserved R/W 0x00 Yes Reserved
1:0 Reserved Reserved
0x2C Reserved 7:0 Reserved R/W 0x2F Yes Reserved
7:5 Reserved Yes Reserved
VOD Control CHB
000: 0.7 V
001: 0.8 V
010: 0.9 V
0x2D CH B VOD 4:2 VOD CHB Control R/W 0xAD Yes 011: 1.0 V (default)
100: 1.1 V
101: 1.2 V
110: 1.3 V
111: 1.4 V
1:0 Reserved Yes Reserved
7:3 Reserved Reserved
0x2E Reserved R/W 0x02
2:0 Reserved Yes Reserved
7 Reserved Yes Reserved
0x2F Reserved 6:4 Reserved R/W 0x00 Reserved
3:0 Reserved Yes Reserved
0x30-0x31 Reserved 7:0 Reserved R/W 0x00 Reserved
32 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: DS80PCI102
DS80PCI102
www.ti.com
SNLS344G JULY 2011REVISED AUGUST 2015
Table 10. SMBus Register Map (continued)
Register EEPROM
Address Bit Field Type Default Description
Name Bit
7:6 Reserved Reserved
0x32 Reserved 5:2 Reserved R/W 0x00 Yes Reserved
1:0 Reserved Reserved
0x33 Reserved 7:0 Reserved R/W 0x2F Yes Reserved
0x34 Reserved 7:0 Reserved R/W 0xAD Yes Reserved
7:3 Reserved Reserved
0x35 Reserved R/W 0x02
2:0 Reserved Yes Reserved
7 Reserved Yes Reserved
0x36 Reserved 6:4 Reserved R/W 0x00 Reserved
3:0 Reserved Yes Reserved
0x37-0x38 Reserved 7:0 Reserved R/W 0x00 Reserved
7:6 Reserved Reserved
0x39 Reserved 5:2 Reserved R/W 0x00 Yes Reserved
1:0 Reserved Reserved
0x3A Reserved 7:0 Reserved R/W 0x2F Yes Reserved
0x3B Reserved 7:0 Reserved R/W 0xAD Yes Reserved
7:3 Reserved Reserved
0x3C Reserved R/W 0x02
2:0 Reserved Yes Reserved
7 Reserved Yes Reserved
0x3D Reserved 6:4 Reserved R/W 0x00 Reserved
3:0 Reserved Yes Reserved
0x3E-0x3F Reserved 7:0 Reserved R/W 0x00 Reserved
7:6 Reserved Reserved
0x40 Reserved 5:2 Reserved R/W 0x00 Yes Reserved
1:0 Reserved Reserved
0x41 Reserved 7:0 Reserved R/W 0x2F Yes Reserved
0x42 Reserved 7:0 Reserved R/W 0xAD Yes Reserved
7:3 Reserved Reserved
0x43 Reserved R/W 0x02
2:0 Reserved Yes Reserved
7 Reserved Yes Reserved
0x44 Reserved 6:4 Reserved R/W 0x00 Reserved
3:0 Reserved Yes Reserved
0x45 Reserved 7:0 Reserved R/W 0x00 Reserved
0x46 Reserved 7:0 Reserved R/W 0x38 Reserved
7:4 Reserved Reserved
0x47 Reserved R/W 0x00
3:0 Reserved Yes Reserved
7:6 Reserved Yes Reserved
0x48 Reserved R/W 0x05
5:0 Reserved Reserved
0x49-0x4B Reserved 7:0 Reserved R/W 0x00 Reserved
7:3 Reserved Yes Reserved
0x4C Reserved 2:1 Reserved R/W 0x00 Reserved
0 Reserved Yes Reserved
0x4D-0x50 Reserved 7:0 Reserved R/W 0x00 Reserved
7:5 Version[2:0] 011'b
Device
0x51 R 0x77
Information 4:0 Device ID[4:0] 1 0111'b
0x52 Reserved 7:0 Reserved R/W 0x00 Reserved
0x53 Reserved 7:0 Reserved R/W 0x00 Reserved
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 33
Product Folder Links: DS80PCI102
DS80PCI102
SNLS344G JULY 2011REVISED AUGUST 2015
www.ti.com
Table 10. SMBus Register Map (continued)
Register EEPROM
Address Bit Field Type Default Description
Name Bit
0x54 Reserved 7:0 Reserved R/W 0x00 Reserved
0x55 Reserved 7:0 Reserved R/W 0x00 Reserved
0x56 Reserved 7:0 Reserved R/W 0x10 Reserved
0x57 Reserved 7:0 Reserved R/W 0x64 Reserved
0x58 Reserved 7:0 Reserved R/W 0x21 Reserved
7:1 Reserved Reserved
0x59 Reserved R/W 0x00
0 Reserved Yes Reserved
0x5A Reserved 7:0 Reserved R/W 0x54 Yes Reserved
0x5B Reserved 7:0 Reserved R/W 0x54 Yes Reserved
0x5C Reserved 7:0 Reserved R/W 0x00 Reserved
0x5D Reserved 7:0 Reserved R/W 0x00 Reserved
0x5E Reserved 7:0 Reserved R/W 0x00 Reserved
0x5F Reserved 7:0 Reserved R/W 0x00 Reserved
0x60 Reserved 7:0 Reserved R/W 0x00 Reserved
0x61 Reserved 7:0 Reserved R/W 0x00 Reserved
34 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: DS80PCI102
Pattern
Generator
VID = 1.0 Vp-p,
DE = 0 dB
8 Gb/s, PRBS23
Scope
BW = 50 GHz
DS80PCI102
IN OUT
TL
Lossy Channel
DS80PCI102
www.ti.com
SNLS344G JULY 2011REVISED AUGUST 2015
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
In PCIe Gen-3 applications, the specification requires Rx-Tx link training to establish and optimize signal
conditioning settings at 8 Gbps. In link training, the Rx partner requests a series of FIR - preshoot and de-
emphasis coefficients (10 Presets) from the Tx partner. The Rx partner includes 7-levels (6 dB to 12 dB) of CTLE
followed by a single tap DFE. The link training would pre-condition the signal with an equalized link between the
root-complex and endpoint. Note that there is no link training in PCIe Gen-1 (2.5 Gbps) or PCIe Gen-2 (5.0
Gbps) applications. The DS80PCI102 is placed in between the Tx and Rx. It would help extend the PCB trace
reach distance by boosting the attenuated signals with it's equalization, so that the signal can be more easily
recovered by the downstream Rx. In Gen 3 mode, DS80PCI102 transmit outputs are designed to pass the Tx
Preset signaling onto the Rx for the PCIe Gen 3 link to train and optimize the equalization settings. The
suggested setting for the DS80PCI102 are EQ = 0x00, VOD = 1.2 Vp-p and DEM = 0 dB. Additional adjustments
to increase the EQ or DEM setting should be performed to optimize the eye opening in the Rx partner. See the
tables below for Pin Mode and SMBus Mode configurations.
Table 11. Suggested Device Settings in Pin Mode
Channel Pin Mode Settings
EQx[1:0] 0, 0 (Level 1)
DEMx Float, R (Level 10)
Table 12. Suggested Device Settings in SMBus Slave Mode
Register Write Value Comments
0x06 0x18 Enables SMBus Slave Mode Register Control
0x0F 0x00 Set CHA EQ to 0x00.
0x25 0xAD Set CHA VOD to 101'b (1.2 Vp-p).
0x11 0x00 Set CHA DEM to 000'b (0 dB).
0x16 0x00 Set CHB EQ to 0x00.
0x2D 0xAD Set CHB VOD to 101'b (1.2 Vp-p).
0x18 0x00 Set CHB DEM to 000'b (0 dB).
8.2 Typical Application
The DS80PCI102 extends PCB trace and cable reach in PCIe Gen1, 2 and 3 applications by applying
equalization to compensate for the insertion loss of the trace or cable. In Gen 3 mode, the device aids
specifically in the equalization link training to improve the margin and overall eye inside the Rx. The DS80PCI102
can be used on the motherboard, mid plane (riser card), end-point target cards, and active cable assemblies.
The capability of the DS80PCI102 performance is shown in the following two test setup connections.
Figure 10. Test Setup Connections Diagram
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 35
Product Folder Links: DS80PCI102
Pattern
Generator
VID = 1.0 Vp-p,
DE = -9 dB
8 Gb/s, PRBS23
Scope
BW = 50 GHz
DS80PCI102
TL1
Lossy Channel IN OUT TL2
Lossy Channel
DS80PCI102
SNLS344G JULY 2011REVISED AUGUST 2015
www.ti.com
Typical Application (continued)
Figure 11. Test Setup Connections Diagram
8.2.1 Design Requirements
As with any high speed design, there are many factors which influence the overall performance. The following list
indicates critical areas for consideration during design.
Use 100-Ωimpedance traces. Length matching on the P and N traces should be done on the single-end
segments of the differential pair.
Use uniform trace width and trace spacing for differential pairs.
Place AC-coupling capacitors near to the receiver end of each channel segment to minimize reflections.
For Gen3, AC-coupling capacitors of 220 nF are recommended, maximum body size is 0402, and add cutout
void on GND plane below the landing pad of the capacitor in order to reduce parasitic capacitance to GND.
Back-drill connector vias and signal vias to minimize stub length.
Use Reference plane vias to ensure a low inductance path for the return current.
8.2.2 Detailed Design Procedure
The DS80PCI102 should be placed at an offset location and close to the Rx with respect to the overall channel
attenuation. The suggested settings are recommended as a starting point for most applications. Once these
settings are configured, additional adjustments of the DS80PCI102 EQ or DE may be required to optimize the
repeater performance. The CTLE and DFE coefficient in the Rx can also be adjusted to further improve the eye
opening.
8.2.3 Application Curves
DS80PCI102 Settings: DS80PCI102 Settings:
EQ[1:0] = [R, R] or 0x15, Dem[1:0] = [Float, Float] EQ[1:0] = [Float, R] or 0x1F, DEM[1:0] = [Float, Float]
Figure 12. TL = 20-Inch 4–Mil FR4 Trace Figure 13. TL = 35-Inch 4–Mil FR4 Trace
36 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: DS80PCI102
DS80PCI102
www.ti.com
SNLS344G JULY 2011REVISED AUGUST 2015
Typical Application (continued)
DS80PCI102 Settings:
DS80PCI102 Settings: EQ[1:0] = [R, 1] or 0x0F, DEM[1:0] = [Float, Float]
EQ[1:0] = [R, R] or 0x15, DEM[1:0] = [Float, Float] Figure 15. TL1 = 30-Inch 4–Mil FR4 Trace, TL2 = 15-Inch
Figure 14. TL1 = 20-Inch 4–Mil FR4 Trace, TL2 = 15-Inch 4–Mil FR4 Trace
4–Mil FR4 Trace
9 Power Supply Recommendations
9.1 3.3-V or 2.5-V Supply Mode Operation
The DS80PCI102 has an optional internal voltage regulator to provide the 2.5-V supply to the device. In 3.3-V
mode, the VIN pin = 3.3 V is used to supply power to the device and the VDD pins should be left open. The
internal regulator will provide the 2.5 V to the VDD pins of the device and a 0.1-μF capacitor is needed at each of
the five VDD pins for power supply de-coupling (total capacitance should be 0.5 µF), and the VDD pins should
be left open. The VDD_SEL pin must be tied to GND to enable the internal regulator. In 2.5-V mode, the VIN pin
should be left open and 2.5-V supply must be applied to the VDD pins. The VDD_SEL pin must be left open (no
connect) to disable the internal regulator.
The DS80PCI102 can be configured for 2.5-V operation or 3.3-V operation. The lists below outline required
connections for each supply selection.
3.3-V Mode of Operation
1. Tie VDD_SEL = 0 with 1-kΩresistor to GND.
2. Feed 3.3-V supply into VIN pin. Local 1.0-µF decoupling at VIN is recommended.
3. See information on VDD bypass below.
4. SDA and SCL pins should connect pullup resistor to VIN
5. Any 4-Level input which requires a connection to "Logic 1" should use a 1-kΩresistor to VIN
2.5-V Mode of Operation
6. VDD_SEL = Float
7. VIN = Float
8. Feed 2.5-V supply into VDD pins.
9. See information on VDD bypass below.
10. SDA and SCL pins connect pullup resistor to VDD for 2.5-V uC SMBus IO
11. SDA and SCL pins connect pullup resistor to VDD for 3.3-V uC SMBus IO
12. Any 4-Level input which requires a connection to "Logic 1" should use a 1-kΩresistor to VIN
NOTE
Note: The DAP (bottom solder pad) is the GND connection.
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 37
Product Folder Links: DS80PCI102
VDD_SEL
VIN
VDD
VDD
3.3 V
0.1 µF
0.1 µF
Internal
voltage
regulator
Enable
2.5 V
VDD_SEL
VIN
VDD
VDD
Internal
voltage
regulator
Disable
Place 0.1 µF capacitors close to VDD Pins
Total capacitance should be 7 0.2 µF
1 µF
10 µF
2.5 V
1 µF
10 µF
0.1 µF
0.1 µF
Place 0.1 µF capacitors close to VDD Pins
open
open
3.3 V mode 2.5 V mode
DS80PCI102
SNLS344G JULY 2011REVISED AUGUST 2015
www.ti.com
3.3-V or 2.5-V Supply Mode Operation (continued)
Figure 16. 3.3 V or 2.5 V Supply Connection Diagram
9.2 Power Supply Bypass
Two approaches are recommended to ensure that the DS80PCI102 is provided with an adequate power supply
bypass. First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent
layers of the printed circuit board. Second, careful attention to supply bypassing through the proper use of
bypass capacitors is required. A 0.1 μF bypass capacitor should be connected to each VDD pin such that the
capacitor is placed as close as possible to the device. Small body size capacitors (such as 0402) reduce the
parasitic inductance of the capacitor and also help in placement close to the VDD pin. If possible, the layer
thickness of the dielectric should be minimized so that the VDD and GND planes create a low inductance supply
with distributed capacitance.
38 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: DS80PCI102
VDD
1
23456
22
21
20
19
24
23
9
10
11
12
GND
BOTTOM OF PKG
(TOP LAYER)
8
7
18
171615
1413
1 2
1 2
12
12
12
12
VIN
5
5
5
7
7
5
5
5
7
7
> 25 Via to GND Layer
Via to GND Layer
Via to VIN Layer
Via to Bottom Layer
Pad on Bottom Layer
Pad on Bottom Layer
Via to GND Layer for
return current path
Uniform trace
width and spacing
Differential
Vias
DS80PCI102
www.ti.com
SNLS344G JULY 2011REVISED AUGUST 2015
10 Layout
10.1 Layout Guidelines
The differential inputs and outputs are designed with 100-Ωdifferential terminations. Therefore, they should be
connected to interconnects with controlled differential impedance of approximately 85-110 Ω. It is preferable to
route differential lines primarily on one layer of the board, particularly for the input traces. The use of vias should
be avoided if possible. If vias must be used, they should be used sparingly and must be placed symmetrically for
each side of a given differential pair. Whenever differential vias are used, the layout must also provide for a low
inductance path for the return currents as well. Route the differential signals away from other signals and noise
sources on the printed circuit board. To minimize the effects of crosstalk, a 5:1 ratio or greater should be
maintained between inter-pair spacing and trace width. See AN-1187 Leadless Leadframe Package (LLP)
Application Report (SNOA401) for additional information on QFN (WQFN) packages.
The DS80PCI102 pinout promotes easy high speed routing and layout. To optimize DS80PCI102 performance
refer to the following guidelines:
1. Place local VIN and VDD capacitors as close as possible to the device supply pins. Often the best location is
directly under the DS80PCI102 pins to reduce the inductance path to the capacitor. In addition, bypass
capacitors may share a via with the DAP GND to minimize ground loop inductance.
2. Differential pairs going into or out of the DS80PCI102 should have adequate pair-to-pair spacing to minimize
crosstalk.
3. Use return current via connections to link reference planes locally. This ensures a low inductance return
current path when the differential signal changes layers.
4. Optimize the via structure to minimize trace impedance mismatch.
5. Place GND vias around the DAP perimeter to ensure optimal electrical and thermal performance.
6. Use small body size AC coupling capacitors when possible 0402 or smaller size is preferred. The AC
coupling capacitors should be placed closer to the Rx on the channel.
Figure 17 depicts different transmission line topologies which can be used in various combinations to achieve the
optimal system performance. Impedance discontinuities at the differential via can be minimized or eliminated by
increasing the swell around each hole and providing for a low inductance return current path. When the via
structure is associated with thick backplane PCB, further optimization such as back drilling is often used to
reduce the detrimental high-frequency effects of stubs on the signal path.
10.2 Layout Example
Figure 17. Typical Routing Options
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 39
Product Folder Links: DS80PCI102
DS80PCI102
SNLS344G JULY 2011REVISED AUGUST 2015
www.ti.com
11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
Absolute Maximum Ratings for Soldering,SNOA549
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
PCI-Express is a trademark of PCI-SIG.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
40 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: DS80PCI102
PACKAGE OPTION ADDENDUM
www.ti.com 24-Aug-2015
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
DS80PCI102SQ/NOPB ACTIVE WQFN RTW 24 1000 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 PCI102
DS80PCI102SQE/NOPB ACTIVE WQFN RTW 24 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 PCI102
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
www.ti.com 24-Aug-2015
Addendum-Page 2
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
DS80PCI102SQ/NOPB WQFN RTW 24 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1
DS80PCI102SQE/NOPB WQFN RTW 24 250 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Sep-2016
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DS80PCI102SQ/NOPB WQFN RTW 24 1000 210.0 185.0 35.0
DS80PCI102SQE/NOPB WQFN RTW 24 250 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Sep-2016
Pack Materials-Page 2
www.ti.com
PACKAGE OUTLINE
C
24X 0.3
0.2
24X 0.5
0.3
0.8 MAX
(0.1) TYP
0.05
0.00
20X 0.5
2X
2.5
2X 2.5
2.6 0.1
A4.1
3.9 B
4.1
3.9
WQFN - 0.8 mm max heightRTW0024A
PLASTIC QUAD FLATPACK - NO LEAD
4222815/A 03/2016
PIN 1 INDEX AREA
0.08 C
SEATING PLANE
1
613
18
7 12
24 19
(OPTIONAL)
PIN 1 ID 0.1 C A B
0.05 C
EXPOSED
THERMAL PAD
25
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
SCALE 3.000
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
24X (0.25)
24X (0.6)
( ) TYP
VIA
0.2
20X (0.5)
(3.8)
(3.8)
(1.05)
( 2.6)
(R )
TYP
0.05
(1.05)
WQFN - 0.8 mm max heightRTW0024A
PLASTIC QUAD FLATPACK - NO LEAD
4222815/A 03/2016
SYMM
1
6
712
13
18
19
24
SYMM
LAND PATTERN EXAMPLE
SCALE:15X
25
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
METAL
SOLDER MASK
OPENING
SOLDER MASK DETAILS
NON SOLDER MASK
DEFINED
(PREFERRED)
www.ti.com
EXAMPLE STENCIL DESIGN
24X (0.6)
24X (0.25)
20X (0.5)
(3.8)
(3.8)
4X ( 1.15)
(0.675)
TYP
(0.675) TYP
(R ) TYP0.05
WQFN - 0.8 mm max heightRTW0024A
PLASTIC QUAD FLATPACK - NO LEAD
4222815/A 03/2016
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
SYMM
METAL
TYP
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 25:
78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
SYMM
1
6
712
13
18
19
24
25
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used in or for Designers’ applications) with all applicable regulations, laws and other applicable requirements. Designer represents that, with
respect to their applications, Designer has all the necessary expertise to create and implement safeguards that (1) anticipate dangerous
consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm and
take appropriate actions. Designer agrees that prior to using or distributing any applications that include TI products, Designer will
thoroughly test such applications and the functionality of such TI products as used in such applications.
TI’s provision of technical, application or other design advice, quality characterization, reliability data or other services or information,
including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to
assist designers who are developing applications that incorporate TI products; by downloading, accessing or using TI Resources in any
way, Designer (individually or, if Designer is acting on behalf of a company, Designer’s company) agrees to use any particular TI Resource
solely for this purpose and subject to the terms of this Notice.
TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TI
products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections,
enhancements, improvements and other changes to its TI Resources. TI has not conducted any testing other than that specifically
described in the published documentation for a particular TI Resource.
Designer is authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that
include the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE
TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY
RIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or
endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
TI RESOURCES ARE PROVIDED “AS IS” AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR
REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO
ACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUAL
PROPERTY RIGHTS. TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY DESIGNER AGAINST ANY CLAIM,
INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF
PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL,
DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN
CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGES.
Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949
and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements.
Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such
products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards
and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must
ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in
life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use.
Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life
support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all
medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S.
TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product).
Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications
and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory
requirements in connection with such selection.
Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s non-
compliance with the terms and provisions of this Notice.
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