NEC PNP SILICON TRANSISTOR 2SA733 DESCRIPTION The 2SA733 is designed for use in driver stage of AF amplifier. PACKAGE DIMENSIONS in millimeters finches) FEATURES High hee and Excellent Linearity : 200 TYP. 52 MAK, (0204 MAK) Hee (Vce =-6.0 V, le =-1.0 mA} rd 42 ABSOLUTE MAXIMUM RATINGS 5 2 Maximum Temperatures 3s Storage Temperature 2... 0. ee 55 te 4125 C 23 Junction Temperature ........... +125 C Maximum 2 z Maximum Power Dissipation (Ta=25 "C} _f = Total Power Dissipation ................ 250 mw Maximum Voltages and Currents (Ta=25 C} | ae Vero Collector to Base Voltage 2.0.0.0... -60 Vv ig = Voeo Collector to Emitter Voltage 2... 2. 50 vy . - 5 Vego Emitter to Base Voltage ........... -5.0 V 1, EMITTER Elad : $C.438 le Collector Current... 0.0.06 c cee =100mA, ; fase ine Powe lp Base Current ....200ceee.euaaee) FO mA ELECTRICAL CHARACTERISTICS (Ta =25 C) SYMBOL CHARACTERISTIC MLM. TYP. MAK. UNIT TEST CONDITIONS hee DC Current Gain a0 200 800 Vice=-6.0 V, Ie=-1.0 m4 NE Noise Figure 6.0 20 a8 Vee =-6.0 V, =-0.3 mA, AG= 10 kM, f= 100 He tr Gain Bandwidth Product 100 180 MHz Vcp=-6.0 V, Ip=10 mA Cob Output Capacitance 45 6.0 PF Veg 2-10 V, Ip =0, f=1.0 MHz lepo Collector Curaff Current . -0.1 BA Vce=-60 , le=0 leno Emitter Cutoff Current 0,1 BA Vear-B.0V, lewO VBE Base to Emitter Voltage -058 -0.62 -0.68 Vv Voce -6.0 V. I=-1,0 ma, VCEtsath Collector Saturation Voltage 0.18 -0.3 Vv I= 100 mA, Ig = 10 mA Classification of hee Flank A Oo P x Range 90 180 135 270 200 400 300 600 hee Test Conditions: Vee =-6.0 V, [o=-1,.0ma 99