TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ900
BUZ901
VDSX Drain – Source Voltage
VGSS Gate – Source Voltage
IDContinuous Drain Current
ID(PK) Body Drain Diode
PDTotal Power Dissipation @ Tcase = 25°C
Tstg Storage Temperature Range
TjMaximum Operating Junction Temperature
RθJC Thermal Resistance Junction – Case
±14V
8A
8A
125W
–55 to 150°C
150°C
1°C/W
MECHANICAL DATA
Dimensions in mm
39.0 ± 1.1
30.2 ± 0.15
16.9 ± 0.15
R 4.0 ± 0.1 R 4.4 ± 0.2
Ø 1.0
Ø 20 M ax.
1.50
Typ. 11.60
± 0.3
8.7 Max.
10.90 ± 0.1
+0.1
-0.15
25.0
12
N–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905 & BUZ906
Pin 1 – Gate
TO–3
Pin 2 – Drain Case – Source
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900
160V BUZ901
200V
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ900
BUZ901
Characteristic Test Conditions Min. Typ. Max. Unit
BVDSX Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
VGS(OFF) Gate – Source Cut–Off Voltage
VDS(SAT)* Drain – Source Saturation Voltage
IDSX Drain – Source Cut–Off Current
yfs* Forward Transfer Admittance
160
200
±14
0.15 1.5
12
10
10
0.7 2
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤2%.
VGS = –10V BUZ900
ID= 10mA BUZ901
VDS = 0 IG= ±100µA
VDS = 10V ID= 100mA
VGD = 0 ID= 8A
VDS = 160V
BUZ900
VGS = –10V VDS = 200V
BUZ901
VDS = 10V ID= 3A
V
V
V
V
mA
S
Characteristic Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
ton Turn–on Time
toff Turn-off Time
500
300
10
100
50
VDS = 10V
f = 1MHz
VDS = 20V
ID= 5A
pF
ns
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
025 50 75 100 125 150
0
25
50
75
100
125
150
T — CASE TEMPERATURE (˚C)
C
CHANNEL DISSIPATION (W)
Derating Chart
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ900
BUZ901
010 20 30 40 50 60 70 80 90
0
1
2
3
4
5
6
7
8
9
P
=
1
2
5
W
CH
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
6V
5V
4V
3V
2V
010 20 30 40 50 60 70 80 90
0
1
2
3
4
5
6
7
8
9
P
=
1
2
5
W
CH
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
C
T = 75˚C
6V
5V
4V
3V
2V
0246810 12 14
0
2
4
6
8
10
V — GATE – SOURCE VOLTAGE (V)
GS
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
I = 6A
D
I = 3A
D
I = 1A
D
012345678
0
1
2
3
4
5
6
7
8
9
I — DRAIN CURRENT (A)
D
V — GATE – SOURCE VOLTAGE (V)
GS
V = 10V
DS
T = 100˚C
C
T = 25˚C
C
T = 75˚C
C
110 100 1000
0.01
0.1
1
10
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
160V
200V
D
C
OPE
R
A
T
I
O
N
T = 25˚C
C
BUZ900 BUZ901
012345678
0.1
1
10
100
G — TRANSCONDUCTANCE (S)
FS
I — DRAIN CURRENT (A)
D
T = 25˚C
C
T = 75˚C
C
V = 20V
DS
Drain – Source Voltage
vs
Gate – Source Voltage Typical Transfer Characteristics
Typical Output Characteristics Typical Output Characteristics
Forward Bias Safe Operating Area Transconductance
