
BAT85 SCHOTTKY BARRIER DIODE
FEATURES :
• For general purpose applications.
• This diode features low turn-on voltage. This device is
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
• This diode is also available in the MiniMELF case with
• Pb / RoHS Free
Maximum Ratings and Thermal Characteristics
C ambient temperature unless otherwise specified
Symbol Value Unit
Continuous Reverse Voltage VR30 V
Continuous Forward Current IF200(1) mA
Peak Forward Current IFM 300(1) mA
Forward Surge Current at tp < 1s IFSM 600(1) mA
Power Dissipation (Infinite Heatsink) PD200(1) mW
Thermal Resistance Junction to Ambient Air R
JA 430(1) °C/W
Junction Temperature TJ125 °C
Ambient Operating Temperature Range Ta -65 to + 125 °C
Storage temperature range TS-65 to + 150 °C
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics
(T
= 25°C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 30 - - V
Reverse Current IRVR = 25 V - - 2 µA
- - 0.32
Forward Voltage
- - 0.4
-0.5 -
- - 0.8
Diode Capacitance Cd VR = 1V, f = 1MHz - - 10 pF
I
= 10mA to I
= 10mA
to I
= 1 mA
Page 1 of 2 Rev. 02 : March 24, 2005
Test Condition
Parameter
Reverse Recovery Time
VF
Trr
V
ns
IR = 10 µA (pulsed)
5--
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark