MJE341 MJE341K isnicon) MJE344 MJE344K PLASTIC NPN SILICON ; MEDIUM-POWER TRANSISTORS 0.5 AMPERE ... designed for power output stages in television, radio, phonograph POWER TRANSISTORS and other consumer product applications. NPN SILICON @ Recommended for 1.5 W Class A Output in Transformer Coupled, Line-Operated Equipment MJE341 20. ohare Wares @ Ideal for Audio Output Circuitry in Black and White Television ea Receivers MJE344 Choice of Packages MJE341, MJE344 Case 77 MJE341K, MJE344K Case 199 MAXIMUM RATINGS MJE341 MJE344 MJE341,MJE344 Rating Symbol MJE341K MJE344K Unit \Coliector-Emitter Voltage VcEO 150 200 Vde Collector-Base Voltage Veg 175 200 Vde E mitter-Base Voltage Veg 3.0 5.0 Vde |Collector Current Continuous Io 500_ mAdc Base Current pg ~. 250 mAdc MJE341 MJE341K MJE344 MJE344K Total Device Dissipation @ Tc = 25C Pp 20.8 30 Watts Derate above 25C 0.167 0.24 wc Operating and Storage Junction Ty.T stg = - -65 to +150 e oC , Temperature Range CASE 77-03 THERMAL CHARACTERISTICS MJE341 MJE341K Characteristic Symbol MJE344 MJE344K Unit Thermal Resistance, Junction to Case 8Jc 6.0 4.167 cw ACTIVE-REGI AFE OPERATING AREA 1 ACTIVE REGIONS: aaa MJE341K, MJE344K a BONDING MIRE LIMIT THERMAL LIMT@ Tc = 2 R tc, COLLECTOR CURRENT (AMP) B 0.01 Ve, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a CASE 199-04 transistor: average junction temperature and second breakdown. Safe operating area curves indicate [c-VcE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater clissipation than the curves indicate. The data of Figure 1 is based on Ty(p4) = 150C; To is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided Tj(pk) < 150C. At high case temperatures, thermal timitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN-415} 497MJE341, MJE341K, MJE344, MJE344K (continued) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) | Characteristic | __ Symbol Min | mx [unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage VCEO(sus) Vde (Ic = 1.0 mAdc, Ig = 0) MJE341,K 150 - MJE344,K 200 = Collector Cutoff Current IcEO mAdc (Vcg = 150 Vde, tg = 0) MJE3461,K - 1.0 (Voce = 200 Vdc, Ig = 0) MJE344,K - 1.0 Collector Cutoff Current 'cBo mAde (Vgg = 175 Vde, ig 20} MJE341.K - 0.3 (Veg 2 200 Vac, Ig = 0) MJE344,K - 01 Emitter Cutoff Current leEBo mAdc (Veg = 3.0 Vae, Ic = 0) MJE341,K - 0.1 ) Wep * 9.0 Vade, ig = 0) MJE344,K - On ON CHARACTERISTICS DC Current Gain hee - {lg = 10 mAdc, Veg = 10 Vdc) MJE341,K 20 - (ig = 50 mAdc, VcE = 10 Vde} MJE341,K 25 200 MJE344,K 30 300 (Ig = 150 mAdc, VcE = 10 Vdc) MJE341,K 20 = Collector-Emitter Saturation Voltage VCE Isat) Vdc (ig = 50 mAde, Ig = 5.0 mAdc) AH Types - 1.0 (Ig = 150 mAdc, Ig = 15 mAdc) MJE341,K - 2.3 Base-E mitter On Voltage VBE(on) - 1.0 Vde tic = 50 MAdc, Vcg = 10 Vac) DYNAMIC CHARACTERISTICS Current-GainBandwidth Product fr 1S - MHz (ig = 50 MAdc, VoE * 25 Vdc, f = 10 MHz} Output Capacitance Cob - 15 pF (Vog * 20 Vdc, l ~ 0, f = 100 KHz) Smail-Signal Current Gain hte 25 ~ - (ig = 50 mAdc, Vg = 10 Vide, f = 1.0 kHz) FIGURE 2 OC CURRENT GAIN hfe, CURRENT GAIN 100-20 30 65.070 10 Vce = 10V woo VcE = 2,.0V 2 30) 50 70100 = 200 300 500 ic, COLLECTOR CURRENT (mA} S a VOLTAGE (VOLTS) 2 > FIGURE 3 ON VOLTAGES @ ig/g = Vee @ Vce 10V VcE(sat)tc/tp = e n 498 igitg = K 50 100 200 (300 800 ic, COLLECTOR CURRENT (mA}MJE341, MJE341K, MJE344, MJE344K (continued) MJE341, B F MJE344 = u | 4, M 1 Hf ! f Mi i A qo 4 t wT la K s Db elle STYLEt ===] PIN 1. EMITTER 1-< 2, COLLECTOR Mole 3. BASE NOTE: 1. MT = MAIN TERMINAL CASE 77-03 MJE341K, Be MJE344K F oT 1 fr PTT aT a iff ts | Hog $ ply ale R s : . Nit THIN. BASE 2. COLLECTOR hE 3. EMITTER 1, DIN-"G" IS TO CENTER LINE OF LEADS. CASE 199.04 499