HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6736
Issued Date : 1992.12.15
Revised Date : 2002. 04.03
Page No. : 1/4
HMJE2955T HSMC Produc t Specification
HMJE2955T
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE2955T is designed for general purpose of amplifier and
switching applica tions.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper ature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 75 W
Total Power Dissipation (Ta=25°C).................................................................................... 0.6 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -60 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
IB Base Current.................................................................................................................... -6 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -70 - - V IC=-10mA, IE= 0
BVCEO -60 - - V IC=-200mA, IB=0
BVEBO -5 - - V IE=-1mA, IC=0
ICBO - - -1 mA VCB=-70V, IE=0
ICEX - - -1 mA VCE=-70V, VEB(off)=-1.5V
ICEO - - -700 uA VCE=-30V, IB=0
IEBO - - -5 mA VEB=-5V, IC=0
*VCE(sat )1 - - -1.1 V IC=-4A, IB=-400mA
*VCE(sat)2 - - -8 V IC=-10A, IB=-3.3A
*VBE(on) - - -1.8 V IC=-4A, VCE=-4V
*hFE1 20 - 100 IC=-4A, VCE=-4V
*hFE2 5 - - IC=-10A, VCE=-4V
fT 2 - - MHz VCE=-10V, IC=-500mA, f=0.5MHz
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6736
Issued Date : 1992.12.15
Revised Date : 2002. 04.03
Page No. : 2/4
HMJE2955T HSMC Produc t Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
10 100 1000 10000
Collecto r Current- I
C
(mA)
hFE
25
o
C
hFE @ V
CE
=4V
125
o
C
75
o
C
Satur ation Voltage & Collect or Curren t
10
100
1000
10000
10 100 1000 10000
Collec tor Current- I
C
(mA)
Sat u r ation Volt ag e ( mV)
25
o
C
125
o
C
75
o
C
V
CE(sat)
@ I
C
=10I
B
Satur ation Voltage & C ollect or Curren t
10
100
1000
10000
10 100 1000 10000
Collector Curren t-I
C
(mA)
Saturation Volta ge (mV)
25
o
C
125
o
C
75
o
C
V
CE(sat)
@ I
C
=3I
B
ON Voltage & Collector Current
100
1000
10000
10 100 1000 10000
Collec tor Current- I
C
(mA)
O N Volt age ( m V)
25
o
C
V
BE(ON)
@ V
CE
=4V
125
o
C
75
o
C
Capaci ta nce & Rever se-Biased Volta ge
10
100
1000
0.1 1 10 100
Re ver se Biased Voltage ( V)
Capacitance (pF)
Cob
Switching Time & Collector Current
0.01
0.10
1.00
10.00
0.1 1.0 10.0
Collector Curren t (A)
Switching Times ( us)...
Tstg
Ton
Tf
V
CC
=30V, I
C
=10I
B1
= -10I
B2
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6736
Issued Date : 1992.12.15
Revised Date : 2002. 04.03
Page No. : 3/4
HMJE2955T HSMC Produc t Specification
Safe Opera ting Ar ea
1
10
100
1000
10000
100000
1 10 100
Forwar d Vol t age ( V)
Collector Current-I
C
(mA)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6736
Issued Date : 1992.12.15
Revised Date : 2002. 04.03
Page No. : 4/4
HMJE2955T HSMC Produc t Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Allo y; solder plati ng
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
H
2MJE
955T
