© Semiconductor Components Industries, LLC, 2015
July, 2017 − Rev. 7 1Publication Order Number:
MBR60H100CT/D
MBR60H100CTG,
MBRB60H100CTT4G,
NRVBB60H100CTT4G
Switch-mode
Power Rectifier
100 V, 60 A
Features and Benefits
Low Forward Voltage: 0.72 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220)
1.7 Grams (D2PAK−3)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
TO−220
CASE 221A
STYLE 6
3
4
1
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 100 VOLTS
1
3
2, 4
2
MARKING
DIAGRAM
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Device Package Shipping
ORDERING INFORMATION
MBR60H100CTG TO−220
(Pb−Free) 50 Units/Rail
AYWW
B60H100G
A K A
A = Assembly Location
Y = Year
WW = Work Week
B60H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MBRB60H100CTT4G D2PAK−3
(Pb−Free) 800/
Tape & Reel
D2PAK−3
CASE 418B
STYLE 3
AYWW
B60H100G
AKA
NRVBB60H100CTT4G D2PAK−3
(Pb−Free) 800/
Tape & Reel
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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2
MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(TC = 155°C) Per Diode
Per Device
IF(AV) 30
60
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C) IFRM 60 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A
Operating Junction Temperature Range (Note 1) TJ*55 to +175 °C
Storage Temperature Range Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dV/dt 10,000 V/ms
Controlled Avalanche Energy (see test conditions in Figures 9 and 10) WAVAL 400 mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B > 400
> 8000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad) RqJC
RqJA
1.0
70
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 60 A, TJ = 25°C)
(iF = 60 A, TJ = 125°C)
vF
0.80
0.68
0.93
0.81
0.84
0.72
0.98
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR
2.0
0.0013 10
0.01
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
I
R
, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
VR, REVERSE VOLTAGE (VOLTS)
1E−01
1E−02
1E−03
1E−06
1E−08 40
TJ = 125°C
TJ = 150°C
TJ = 25°C
Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg
60 80 100
1E−07
1E−05
1E−04
200
VR, REVERSE VOLTAGE (VOLTS)
1E−01
1E−02
1E−03
1E−06
1E−08 40
TJ = 125°C
TJ = 150°C
TJ = 25°C
60 80 10
0
1E−07
1E−05
1E−04
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
TJ = 150°C
100
10
1.0
125°C
0.1 0.3 0.5 0.7 0.9 1.20.0
175°C
TC, CASE TEMPERATURE (C°)
135
4.0
0
dc
SQUARE WAVE
145 155 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
12
16
8.0
140 150 170 175
165
24
20
130 180
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
TA, AMBIENT TEMPERATURE (°C)
05025 75
2.0
4.0
6.0
8.0
10
12
14
16
0100 125 150 175
SQUARE WAVE
RATED VOLTAGE APPLIED
RqJA = 16° C/W
dc
RqJA = 70° C/W
(NO HEATSINK)
dc
18
20
22
24
1.1
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
TJ = 150°C
100
10
1.0
125°C
0.1 0.3 0.5 0.7 0.9 1.20.0
175°C
1.1
28
36
40
32
48
44
26
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
www.onsemi.com
4
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
0
VR, REVERSE VOLTAGE (VOLTS)
100
10 40 80
TJ = 25°C
Figure 7. Forward Power Dissipation
10
0
20 60
10000
1000
Figure 8. Capacitance
P , AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
04 12816
24
16
0
8
4
12
SQUARE WAVE
20 24 28
20
28
dc
TJ = 175°C
56
48
32
40
36
44
52
60
32 36 4440 48 52 56 60
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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5
MERCURY
SWITCH
VD
ID
DUT
10 mH COIL
+VDD
IL
S1
BVDUT
ILID
VDD
t0t1t2t
Figure 9. Test Circuit Figure 10. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S 1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt ef fects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal t o the ener gy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed b y the supply during breakdown is small and the
total ener gy can be assumed to be nearly equal to the ener gy
stored in the coil during the time when S1 was closed,
Equation (2).
WAVAL [1
2LI2
LPKǒBVDUT
BVDUTVDDǓ
WAVAL [1
2LI2
LPK
EQUATION (1):
EQUATION (2):
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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6
PACKAGE DIMENSIONS
D2PAK−3
CASE 418B−04
ISSUE L
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
5.080
DIMENSIONS: MILLIMETERS
PITCH
2X
16.155
1.016
2X
10.49
3.504
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
www.onsemi.com
7
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
MBR60H100CT/D
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