© Semiconductor Components Industries, LLC, 2009
August, 2019 − Rev. 4
1Publication Order Number:
FDS4435BZ/D
FDS4435BZ
MOSFET – P-Channel,
POWERTRENCH)
-30 V, -8.8 A, 20 mW
Description
This P−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
Features
•Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A
•Max RDS(on) = 35 mW at VGS = −4.5 V, ID = −6.7 A
•Extended VGSS Range (−25 V) for Battery Applications
•HBM ESD Protection Level of ±3.8 kV Typical (Note 3)
•High Performance Trench Technology for Extremely Low RDS(on)
•High Power and Current Handling Capability
•This Device is Pb−Free and RoHS Compliant
Specifications
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDS Drain to Source Voltage −30 V
VGS Gate to Source Voltage ±25 V
IDDrain Current
− Continuous TA = 25°C (Note 1a)
− Pulsed
−8.8
−50
A
PDPower Dissipation TA = 25°C (Note 1a) 2.5 W
Power Dissipation TA = 25°C (Note 1b) 1.0
EAS Single Pulse Avalanche Energy
(Note 4)
24 mJ
TJ, TSTG Operating and Storage Junction Tem-
perature Range
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RqJC Thermal Resistance, Junction to Case 25 °C/W
RqJA Thermal Resistance, Junction to
Ambient (Note 1a)
50
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SOIC8
CASE 751EB
MARKING DIAGRAM
FDS4435BZ = Specific Device Code
A = Assembly Site
L = Wafer Lot Number
YW = Assembly Start Week
ELECTRICAL CONNECTION
Device Package Shipping†
ORDERING INFORMATION
FDS4435BZ SOIC8
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
G
S
S
S
D
D
D
D
Pin 1
81
72
63
54
D
D
D
D
S
S
S
G
FDS4435BZ
ALYW
FDS4435BZ
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2
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol Parameter Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V −30 V
DBVDSS /
DTJ
Breakdown Voltage Temperature
Coefficient
ID = −250 mA, referenced to 25°C−21 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V 1mA
IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 mA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA−1−2.1 −3 V
DVGS(th) /
DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = −250 mA, referenced to 25°C6 mV/°C
RDS(on) Static Drain to Source On Resistance VGS = −10 V, ID = −8.8 A 16 20 mW
VGS = −4.5 V, ID = −6.7 A 26 35
VGS = −10 V, ID = −8.8 A, TJ = 125°C 22 28
gFS Forward Transconductance VDS = −5V, I
D = −8.8 A 24 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −15 V, VGS = 0 V, f = 1MHz 1385 1845 pF
Coss Output Capacitance 275 365 pF
Crss Reverse Transfer Capacitance 230 345 pF
RgGate Resistance f = 1MHz 4.5 W
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = −15 V, ID = −8.8 A, VGS = −10
V, RGEN = 6 W
10 20 ns
trRise Time 6 12 ns
td(off) Turn−Off Delay Time 30 48 ns
tfFall Time 12 22 ns
QgTotal Gate Charge VGS = 0 V to −10 V, VDD = −15 V,
ID = −8.8 A
28 40 nC
QgTotal Gate Charge VGS = 0 V to −5 V, VDD = −15 V,
ID = −8.8 A
16 23 nC
Qgs Gate to Source Charge VDD = −15 V, ID = −8.8 A 5.2 nC
Qgd Gate to Drain “Miller” Charge 7.4 nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = −8.8A (Note 2) −0.9 −1.2 V
trr Reverse Recovery Time IF = −8.8 A, di/dt = 100 A/ms29 44 ns
Qrr Reverse Recovery Charge 23 35 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1 mH, IAS = −7 A, VDD = −30 V, VGS = −10 V.
FDS4435BZ
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs Drain
Current and Gate Voltage
Figure 3. Normalized On−Resistance vs Junction
Temperature
Figure 4. On−Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
0
0
10
20
30
40
50
VGS = −5V
VGS = −4V
VGS = −10V
VGS = −3.5V
VGS = −4.5V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
−ID, DRAIN CURRENT (A)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
1234 0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = −5V
VGS = −4V
VGS = −10V
VGS = −3.5V
VGS = −4.5V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
−ID, DRAIN CURRENT(A)
ms
10 20 30 40 50
−75 −50 −25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = −8.8A
VGS = −10V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE (5C)
2468
10
20
30
40
50
60
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
ID= −8.8A
RDS(on) , DRAIN TO
SOURCE ON−RESISTANCE (mW)
−V
GS , GATE TO SOURCE VOLTAGE (V)
ms
10
1
0
10
20
30
40
50
VDS = −5V
TJ =−55oC
TJ= 25oC
TJ= 150oC
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
−ID, DRAIN CURRENT (A)
−VGS , GATE TO SOURCE VOLTAGE (V)
ms
2345 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0001
0.001
0.01
0.1
1
10
100
TJ = −55 oC
TJ = 25oC
TJ= 150oC
VGS = 0V
−IS, REVERSE DRAIN CURRENT (A)
−VSD , BODY DIODE FORWARD VOLTAGE (V)
FDS4435BZ
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4
TYPICAL CHARACTERISTICS (Continued)
(TJ = 25°C unless otherwise noted)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
0
0
2
4
6
8
10
ID = −8.8A
VDD = −20V
VDD = −10V
−V
GS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = −15V
5 1015202530 0.1 1 10
100
1000
30
f = 1 MHz
VGS = 0V
Crss
Coss
Ciss
CAPACITANCE (pF)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
4000
0.01 0.1 1 10
1
10
TJ= 25oC
TJ= 125oC
tAV, TIME IN AVALANCHE(ms)
−IAS, AVALANCHE CURRENT(A)
30
20
0
10−9
10−8
10−7
10−6
10−5
10−4
TJ = 25oC
TJ= 125oC
VDS = 0V
−Ig,GATE LEAKAGE CURRENT(A)
−VGS, GATE TO SOURCE VOLTAGE(V)
51015202530
25 50 75 100 125 150
0
2
4
6
8
10
RqJA = 50oC/W
VGS = −4.5V
VGS = −10V
−ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (5C)
0.1 1 10
0.01
0.1
1
10
100
100us
SINGLE PULSE
TJ = MAX RATED
RqJA = 125oC/W
TA=25oC
THIS AREA IS
LIMITED BY R
DS(on)
80
10s
1ms
10ms
100ms
1s
DC
−ID, DRAIN CURRENT (A)
−VDS, DRAIN to SOURCE VOLTAGE (V)
FDS4435BZ
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5
TYPICAL CHARACTERISTICS (Continued)
(TJ = 25°C unless otherwise noted)
Figure 13. Single Pulse Maximum Power Dissipation
Figure 14. Junction To Ambient Transient Thermal Response Curve
10−410−310−210−1110
100 1000
1
10
100
1000
P(PK) , PEAK TRANSIENT POWER (W)
VGS = −10 V SINGLE PULSE
RqJA
= 125 oC/W
TA = 25 oC
t, PULSE WIDTH (s)
0.5
10−410−310−210−1110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
RqJA = 125 oC/W
DUTY CYCLE−DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z qJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/ t 2
PEAK TJ = PDM x Z x R + TA
qJA qJA
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in
the United States and/or other countries.
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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