© 2003 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Maximum Ratings
IdAVM TC = 85°C, module 107 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1500 A
VR = 0 t = 8.3 ms (60 Hz), sine 1650 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1350 A
VR = 0 t = 8.3 ms (60 Hz), sine 1500 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 11250 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 11300 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 9120 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 9350 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ±15% Nm
44 ±15% lb.in.
Terminal connection torque (M5) 5 ±15% Nm
44 ±15% lb.in.
Weight typ. 225 g
IdAVM = 107 A
VRRM = 1200-1800 V
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Symbol Conditions Characteristic Values
IRVR = VRRM;T
VJ = 25°C≤0.3 mA
VR = VRRM;T
VJ = TVJM ≤8.0 mA
VFIF = 150 A; TVJ = 25°C≤1.6 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 5mΩ
RthJC per diode; 180° 0.83 K/W
per module; 180° 0.138 K/W
RthJK per diode; 180° 1.13 K/W
per module; 180° 0.188 K/W
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode unless otherwise stated.
VBO 105
Single Phase
Rectifier Bridge
-+
~
~
+
–
~
~
316
VRSM VRRM Type
VV
900 800 VBO 105-08NO7
1200 1200 VBO 105-12NO7
1400 1400 VBO 105-14NO7
1600 1600 VBO 105-16NO7
1800 1800 VBO 105-18NO7*
* delivery time on request
© 2003 IXYS All rights reserved 2 - 2
F4
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 105
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 3
∫
i2dt versus time
(1-10ms) per diode or thyristor
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
316
11.5
0
40
80
120
160
200
I
F
V
F
A
V
T=150°C
T=25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
1500 1350
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
3
4
5
As
2
100
50
0
50
100
150
200
250
300
85
90
95
10 0
10 5
11 0
11 5
12 0
12 5
13 0
13 5
14 0
14 5
15 0
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.77
0.77
0.44
0.28
0.19 0.11 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSB 105
50 100 150 200
0
30
60
90
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
0.01 0.1 110
0.5
1
1.5
K/W
Zth
t[s]
ZthJK
ZthJC
