IRF7342D2TR - International Rectifier

Parameter Maximum Units

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 A

ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7

IDM Pulsed Drain Current ➀-27

PD @TA = 25°C Power Dissipation 2.0 W

PD @TA = 70°C Power Dissipation 1.3

Linear Derating Factor 16 mW/°C

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt ➁-5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C

lCo-packaged HEXFET Power

MOSFET and Schottky Diode

lIdeal For Buck Regulator Applications

lP-Channel HEXFET

l Low VF Schottky Rectifier

lSO-8 Footprint

IRF7342D2

03/09/01

FETKY

 MOSFET & Schottky Diode

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Description

VDSS = -55V

RDS(on) = 105mΩ

Schottky Vf = 0.61V

The FETKYTM family of Co-packaged HEXFETs and

Schottky diodes offer the designer an innovative board

space saving solution for switching regulator and

power management applications. HEXFETs utilize

advanced processing techniques to achieve extremely

low on-resistance per silicon area. Combining this

technology with International Rectifier's low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of portable

electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The

SO-8 package is designed for vapor phase, infrared or

wave soldering techniques.

Top View

Notes:

Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

 Pulse width ≤ 400µs – duty cycle ≤ 2%

 Surface mounted on 1 inch square copper board, t ≤ 10sec.

SO-8

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Symbol Parameter Typ. Max. Units

RθJL Junction-to-Drain Lead, MOSFET ––– 20

RθJA Junction-to-Ambient , MOSFET ––– 62.5 °C/W

Thermal Resistance

RθJA Junction-to-Ambient , SCHOTTKY ––– 62.5

PD- 94101

IRF7342D2

2www.irf.com

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current(Body Diode) ––– ––– -2.0

ISM Pulsed Source Current (Body Diode) ––– ––– -27

VSD Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V

trr Reverse Recovery Time (Body Diode) ––– 54 80 ns TJ = 25°C, IF = -2.0A

Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs 

MOSFET Source-Drain Ratings and Characteristics

Parameter Max. Units Conditions

If (av) Max. Average Forward Current 3.0 50% Duty Cycle. Rectangular Wave, TA = 57°C

See Fig. 21

ISM Max. peak one cycle Non-repetitive 4 90 5µs sine or 3µs Rect. pulse Following any rated

Surge current 70 10ms sine or 6ms Rect. pulse load condition &

with Vrrm applied

Schottky Diode Maximum Ratings

Schottky Diode Electrical Specifications

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– VV

GS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA

––– 95 105 VGS = -10V, ID = -3.4A 

––– 150 170 VGS = -4.5V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -1.0 ––– ––– VV

DS = VGS, ID = -250µA

gfs Forward Transconductance 3.3 ––– ––– SV

DS = -10V, ID = -3.1A

––– ––– -2.0 VDS = -44V, VGS = 0V

––– ––– -25 VDS = -44V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

QgTotal Gate Charge ––– 26 38 ID = -3.1A

Qgs Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V

Qgd Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 6 & 14 

td(on) Turn-On Delay Time ––– 14 22 VDD = -28V

trRise Time ––– 10 15 ID = -1.0A

td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0Ω

tfFall Time ––– 22 32 VGS = -10V, 

Ciss Input Capacitance ––– 690 ––– VGS = 0V

Coss Output Capacitance ––– 210 ––– pF VDS = -25V

Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

mΩ

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

Parameter Max. Units Conditions

Vfm Max. Forward Voltage Drop 0.61 If = 3.0A, Tj = 25°C

0.76 If = 6.0A, Tj = 25°C

0.53 If = 3.0A, Tj = 125°C

0.65 If = 6.0A, Tj = 125°C

Vrrm Max. Working Peak Reverse Voltage 6 0

Irm Max. Reverse Leakage Current 2.0 mA Vr = 60V Tj = 25°C

30 Tj = 125°C

Ct Max. Junction Capacitance 1 45 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C

IRF7342D2

www.irf.com 3

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

Power Mosfet Characteristics

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)



V =

I =

-10V

-3.4 A

0.1 110 100

-VDS, Drain-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

-2.5V 20µs PULSE WIDTH

Tj = 25°C

VGS

TOP -15V

-10V

-6.0V

-5.0V

-4.5V

-3.5V

-3.0V

BOTTOM -2.5V

0.1 110 100

-VDS, Drain-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

-2.5V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP -15V

-10V

- 6.0V

-5.5V

-4.5V

-3.5V

-3.0V

BOTTOM - 2.5V

0.1

100

2.0 3.0 4.0 5.0 6.0 7.0



V = -25V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)



T = 25 C

J°



T = 150 C

J°

IRF7342D2

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Power Mosfet Characteristics

1 10 100

200

400

600

800

1000

-V , Drain-to-Source Volta

e (V)

C, Capacitance (pF)



0V,

f = 1MHz

+ C

C SHORTED

iss

d , ds

rss

oss ds



Ciss



Coss



Crss

010 20 30 40

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)



I =

D-3.1A



V =-12V

V =-30V

V =-48V

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)



V = 0 V



T = 25 C

J°



T = 150 C

J°

0.1

100

1 10 100



OPERATION IN THIS AREA LIMITED

BY RDS

(

)



Sin

le Pulse

T = 150 C

= 25 C

°°

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)



10us



100us



1ms



10ms

IRF7342D2

www.irf.com 5

Power Mosfet Characteristics

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

RGD.U.T.

90%

10%

d(on)

d(off)

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

100

0.0001 0.001 0.01 0.1 1 10 100



Notes:

1. Dut

factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A



t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50



SINGLE PULSE

(

THERMAL RESPONSE

)

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T , Case Temperature ( C)

-I , Drain Current (A)

IRF7342D2

6www.irf.com

Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

Fig 14b. Gate Charge Test Circuit

Fig 14a. Basic Gate Charge Waveform

QGS QGD

Charge

D.U.T. VDS

-3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

Power Mosfet Characteristics

3.0 5.0 7.0 9.0 11.0 13.0 15.0

-VGS, Gate -to -Source Voltage (V)

0.05

0.10

0.15

0.20

0.25

RDS(on), Drain-to -Source On Resistance (

Ω)

ID = -3.4A

0.0 4.0 8.0 12.0 16.0

-ID , Drain Current ( A )

0.05

0.10

0.15

0.20

0.25

0.30

0.35

RDS ( on ) , Drain-to-Source On Resistance (

Ω )

VGS = -4.5V

VGS = -10V

IRF7342D2

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Fig 15. Typical Vgs(th) Vs.

Junction Temperature

Power Mosfet Characteristics

Fig 16. Typical Power Vs. Time

-75 -50 -25 025 50 75 100 125 150

TJ , Temperature ( °C )

1.0

1.2

1.4

1.6

1.8

2.0

-VGS(th) ( V )

ID = -250µA

0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)

100

Power (W)

IRF7342D2

8www.irf.com

Schottky Diode Characteristics

Fig. 18 - Typical Values of

Reverse Current Vs. Reverse Voltage

Fig. 17 - Maximum Forward Voltage Drop

Characteristics

Fig. 19 - Typical Junction Capacitance

Vs. Reverse Voltage

100

0 0.4 0.8 1.2 1.6 2 2.4 2.8

In s tan tane o u s Forwa rd Cur re nt - I ( A)

Forwa r d Voltag e Drop - V ( V)

T = 150 °C

T = 125 °C

T = 2 5° C

0.001

0.01

0.1

100

0 102030405060

125°C

100°C

75°C

50°C

25°C

Reverse Voltage - V (V)

Rever se Cu rr ent - I (mA)

T = 150 °C

100

1000

0 102030405060

T = 25°C

J un c tion Ca pacita n ce - C (p F)

Reverse Volta g e - V (V )

IRF7342D2

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Fig.21 - Maximum Allowable Ambient

Temp. Vs. Forward Current

Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Schottky Diode Characteristics

Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ;

Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ;

PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100



Notes:

1. Duty factor D =t / t

2. Peak T =P x Z + T

1 2

JDM thJA A



t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50



SINGLE PULSE

(THERMAL RESPONSE)

0123456

Average Forward Current - I

F(AV) (A)

100

120

140

160

180

Allowable Ambient Temprature - (°C)

Square wave ( D = 0.50)

80 % Rated V

R applied

see note (4)

RthJA = 62.5 °C/W

IRF7342D2

10 www.irf.com

SO-8 Package Details

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASI C

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX MILLIMETERSINCHES MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 4 5°

8X L 8X c

0.25 [.010] C A B

e1 A

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0. 72 [.02 8]

6.46 [.255]

3X 1. 27 [.05 0]

4. OUT LINE CONFORMS T O JE DEC OUT LINE MS-012AA.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUD E MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUD E MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1. 78 [.07 0]

EX AMPLE: THIS IS AN IRF7101 (MOSFET)

INTERNATIONAL

RECTIFIER

LOGO

F7101

YWW

XXXX

PART NUMBER

LOT CODE

WW = WEEK

Y = LAST DIGIT OF THE YEAR

DATE CODE (YWW)

IRF7342D2

www.irf.com 11

330.00

(

12.992

)

MAX.

14.40

(

.5 66

)

12.40

(

.4 88

)

NOTES :

1. CO NTRO LLING DIMEN SIO N : M ILLIMETER.

2. OU TL INE CO N F O RM S TO EIA -481 & EIA -541.

FEED DIRECTIO N

TERM IN AL NU M BER 1

12.3

(

.484

)

11.7

(

.461

)

8.1

(

.318

)

7.9

(

.312

)

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMEN SION S ARE SHOWN IN MILLIM ETERS(INC HES).

3 . OUT LINE C O N F O RMS TO E IA -481 & E IA -541.

SO-8 Tape and Reel

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/01