PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V RDS(on) = 105m Schottky Vf = 0.61V T op V ie w Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Parameter Maximum Units Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range -3.4 -2.7 -27 2.0 1.3 16 20 -5.0 -55 to +150 A W mW/C V V/ns C Thermal Resistance Symbol RJL RJA RJA Parameter Junction-to-Drain Lead, MOSFET Junction-to-Ambient , MOSFET Junction-to-Ambient , SCHOTTKY Typ. Max. Units --- --- --- 20 62.5 62.5 C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C Pulse width 400s - duty cycle 2% Surface mounted on 1 inch square copper board, t 10sec. www.irf.com 1 03/09/01 IRF7342D2 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 --- --- --- -1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.054 95 150 --- --- --- --- --- --- 26 3.0 8.4 14 10 43 22 690 210 86 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 105 VGS = -10V, ID = -3.4A m 170 VGS = -4.5V, ID = -2.7A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.1A -2.0 VDS = -44V, VGS = 0V A -25 VDS = -44V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 38 ID = -3.1A 4.5 nC VDS = -44V 13 VGS = -10V, See Fig. 6 & 14 22 VDD = -28V 15 ID = -1.0A ns 64 RG = 6.0 32 VGS = -10V, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Typ. --- --- --- 54 85 Max. Units Conditions -2.0 A -27 -1.2 V TJ = 25C, IS = -2.0A, VGS = 0V 80 ns TJ = 25C, I F = -2.0A 130 nC di/dt = 100A/s Schottky Diode Maximum Ratings If (av) Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current ISM Max. Units 3.0 A 490 70 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 57C See Fig. 21 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Vfm Parameter Max. Forward Voltage Drop Vrrm Irm Max. Working Peak Reverse Voltage Max. Reverse Leakage Current Ct Max. Junction Capacitance 2 Max. Units 0.61 0.76 V 0.53 0.65 60 V 2.0 mA 30 145 pF Conditions If = 3.0A, Tj = 25C If = 6.0A, Tj = 25C If = 3.0A, Tj = 125C If = 6.0A, Tj = 125C Vr = 60V Tj = 25C Tj = 125C Vr = 5Vdc ( 100kHz to 1 MHz) 25C www.irf.com IRF7342D2 Power Mosfet Characteristics 100 100 VGS -15V -10V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.5V VGS -15V -10V - 6.0V -5.5V -4.5V -3.5V -3.0V BOTTOM - 2.5V 10 TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP 1 -2.5V 10 -2.5V 0.1 0.1 1 1 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 10 0.1 100 Fig 1. Typical Output Characteristics TJ = 25 C TJ = 150 C 1 V DS = -25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 Fig 3. Typical Transfer Characteristics www.irf.com 7.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 -VGS , Gate-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 100 0.1 2.0 10 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) 10 1 ID = -3.4 A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7342D2 Power Mosfet Characteristics VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 800 Ciss 600 400 Coss 200 Crss 20 -VGS , Gate-to-Source Voltage (V) 1000 0 1 10 ID = -3.1A 16 12 8 4 0 100 0 - -VDS , Drain-to-Source Voltage (V) 20 100 -II D , Drain Current (A) 10 TJ = 150 C TJ = 25 C 1 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1.4 10us 100us 10 1ms 10ms 1 V GS = 0 V 0.4 40 OPERATION IN THIS AREA LIMITED BY R DS(on) 0.1 0.2 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 -ISD , Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 VDS = -48V VDS = -30V VDS = -12V 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7342D2 Power Mosfet Characteristics 3.5 RD VDS -ID , Drain Current (A) 3.0 VGS D.U.T. RG 2.5 + 2.0 V DD VGS Pulse Width 1 s Duty Factor 0.1 % 1.5 1.0 Fig 10a. Switching Time Test Circuit 0.5 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 TC , Case Temperature 125 10% 150 ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7342D2 0.25 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance ) Power Mosfet Characteristics 0.20 0.15 ID = -3.4A 0.10 0.05 3.0 5.0 7.0 9.0 11.0 13.0 15.0 0.35 0.30 VGS = -4.5V 0.25 0.20 0.15 VGS = -10V 0.10 0.05 0.0 4.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 8.0 12.0 16.0 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF7342D2 Power Mosfet Characteristics 100 2.0 80 1.8 Power (W) -VGS(th) ( V ) ID = -250A 1.6 1.4 60 40 20 1.2 0 1.0 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7342D2 Schottky Diode Characteristics 1 00 10 0 Insta nt an eous Fo rw ard C urren t - I F (A) Rev erse Curren t - I R (m A) T J= 150C 10 125C 100C 1 75C 0 .1 50C 0 .0 1 25C T J= 150C 0 .0 01 T J= 125C 10 0 10 T J= 25C 20 30 40 50 60 Reverse V oltag e - V R (V ) Fig. 18 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0 0.4 0 .8 1 .2 1 .6 2 2 .4 2 .8 Forw ard V olta ge Drop - V FM(V) J un ction C a pa cita n ce - C T (pF) 1000 T J= 25C 100 10 Fig. 17 - Maximum Forward Voltage Drop Characteristics 0 10 20 30 40 50 60 Reverse V olta g e - V R (V ) Fig. 19 - Typical Junction Capacitance Vs. Reverse Voltage 8 www.irf.com IRF7342D2 Schottky Diode Characteristics Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 0.01 t1 t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Allowable Ambient Temprature - (C) 180 160 140 RthJA = 62.5 C/W 120 100 DC 80 60 see note (4) 40 Square wave ( D = 0.50) 20 80 % Rated VR applied 0 0 1 2 3 4 5 6 Average Forward Current - F(AV) I (A) Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR www.irf.com 9 IRF7342D2 SO-8 Package Details D 5 A 8 6 7 6 5 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 6X e e1 C .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMET ERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INTERNAT IONAL RECTIFIER LOGO 10 YWW XXXX F7101 DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com IRF7342D2 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/01 www.irf.com 11