Voltage
50 to 600 V Current
1.0 A
• For surface mounted application
• Low profile package
• Ideal for automated placement
• Glass Passivated chip junction
• High temperature soldering:
260 °C / 10 seconds at terminals
Dimensions in mm. CASE:
M1F(DO219AA)
Maxim un Ratings and Electrical Characteristics at 25 °C
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Forward current at TL = 120 °C
VRRM
VRMS
VDC
IF(AV)
MECHANICAL DATA
• Terminal: Pure tin plated, lead free.
• Packaging: 12 mm. tape per EIA STD RS-481
• Weight: 0.015 g.
Marking Code
Typical Junction Capacitance (1MHz; -4V)
Cj
Maximum Thermal Resistance
(5x5 mm2 x 130 µ Copper Area)
Operating Junction and Storage
Temperature Range
Tj - Tstg
Rth (j-a)
FES1CL
150
105
150
1.0 A
85 °C/W
35 °C/W
-55 to + 150 °C
Feb - 08
R
30 A
8 pF
5 µA
100 µA
35 nS
IFSM
VF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Instantaneous Forward
Voltage at 1.0A Ta = 25 °C
Ta = 100 °C
Maximum Reverse Recovery Time (0.5/1/0.25A)
Trr
8.3 ms. peak forward surge current
(Jedec Method)
Rth (j-l)
FES1AL........FES1JL
1 Amp. Surface Mounted Glass Passivated Ultrafast Recovery Rectifier
FES1BL
100
70
100
EALYM
FES1AL
50
35
50
FES1DL
200
140
200
FES1JL
600
420
600
FES1FL
300
210
300
FES1GL
400
280
400
EBLYM ECLYM EDLYM EFLYM EGLYM EJLYM
• Case: Sub SMA plastic case
• Polarity: Color band cathode end
• Marking code refer to Note.
Note: EALYM: E=1A, A=50V, L-LOW Profile, Y-Year Code, M-Month Code
• Low power loss, high efficiency,
FES1HL
500
350
500
EHLYM
0.95 V 1.3 V 1.7 V
10 pF
Rating And Characteristic Curves
MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1
Number of cycles at 60 Hz
10 100
30
25
20
15
10
5
IFSM, peak forward current (A)
TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
0.4 0.6 1 1.2 1.4
50
IF, instantaneous forward current (A)
10
1
0.1
0.01
MAXIMUM FORWARD CURRENT
DERATING CURVE
Lead temperature (ºC)
0 50 17525 75 150125100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IF(AV), average forward current (A)
14
TYPICAL JUNCTION CAPACITANCE
0 1 100
0
8
10
12
10
Cj, junction capacitance (pF)
6
VR, reverse voltage (V)
FES1.L
0.8 1.8
1.6
0
VF, forward voltage (V)
2
RESISTIVE OR
INDUCTIVE LOAD
5x5mm
Copper Pad Areas
Feb - 08
NON INDUCTIVE
50Ω
PULSE
GENERATOR
(NOTE 2)
SET TIME BASE FOR
5/ 10ns/ cm
1cm
trr
+0.5A
0
-0.25A
-1.0A
1Ω
NON
INDUCTIVE
DUT
OSCILLOSCOPE
(NOTE 1)
NON INDUCTIVE
10
Ω
(+)
50vDC
(APPROX)
(-) (+)
(-)
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
NOTES: 1. Rise Time = 7ns max. Input Impedance =
1 megohm 22 pf
2. Rise Time = 10 ns max. Sourse Impedance =
50 ohms
FES1AL - FES1DL
FES1FL - FES1GL
FES1HL - FES1JL
4
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120 °C
Tj = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TYPICAL REVERSE CHARACTERISTICS
20 60
1000
IR, instantaneous reverse current (µA)
Percent of rated peak
reverse voltage (%)
100
1
0.01 40 80 100 120
0140
0.1
10
Tj = 125 ºC
Tj = 25 ºC
Tj = 85 ºC
