SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. * Complimentary to SS8050 * Collector Current: IC=1.5A * Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -40 Units V VCEO VEBO Collector-Emitter Voltage -25 V Emitter-Base Voltage -6 IC Collector Current V PC Collector Power Dissipation TJ TSTG -1.5 A 1 W Junction Temperature 150 C Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100A, IE=0 Min. -40 BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 BVEBO Emitter-Base Breakdown Voltage IE= -100A, IC=0 -6 ICBO Collector Cut-off Current VCB= -35V, IE=0 IEBO Emitter Cut-off Current VEB= -6V, IC=0 hFE1 hFE2 hFE3 DC Current Gain VCE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA 45 85 40 Typ. Max. Units V V V -100 nA -100 nA 170 160 80 300 VCE (sat) Collector-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.28 -0.5 V VBE (sat) Base-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.98 -1.2 V VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 Cob Output Capacitance VCB= -10V, IE=0 f=1MHz fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 100 V 15 pF 200 MHz hFEClassification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 SS8550 Typical Characteristics 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 -100 VCE = -1V IC[mA], COLLECTOR CURRENT IC=10IB -1000 VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 -10 -1 -0.1 -0.0 -1000 100 f=1MHz IE=0 10 1 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2001 Fairchild Semiconductor Corporation -0.4 -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -1000 Figure 2. DC current Gain -10000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Cob[pF], CAPACITANCE -1 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A1, July 2001 SS8550 Package Demensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N SS8550 - PNP Epitaxial Silicon Transistor SEARCH | Parametric | Cross Reference space Fairchild Semiconductor space GO space space space space space >> Find products >> Home find products space space space SS8550 Products groups PNP Epitaxial Silicon Transistor Analog and Mixed Signal Contents Discrete Features | Applications | Product Interface status/pricing/packaging Logic space Microcontrollers Non-Volatile Features Memory spaceOptoelectronics Markets and Complementary to SS8050 applications Collector Current : I = 1.5A C New products Collector Dissipation: P C = 2W Product selection and (TC=25C ) parametric search Cross-reference search back to top technical information Product Folders and Datasheets Application notes Related Links Datasheet Download this datasheet PDF e-mail this datasheet [Email] This page Print version Request samples Dotted line How to order products Dotted line Product Change Notices (PCNs) Dotted line Support Dotted line Distributor and field sales representatives Dotted line Quality and reliability Dotted line Design tools space Applications buy products technical support my Fairchild 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. company back to top Product status/pricing/packaging Product Product status Pricing* Package type Leads Packing method SS8550BBU Full Production $0.058 TO-92 3 BULK SS8550BTA Full Production $0.058 TO-92 3 TAPE REEL SS8550CBU Full Production $0.058 TO-92 3 BULK SS8550CIUBU Full Production $0.058 TO-92 3 BULK SS8550CTA Full Production $0.058 TO-92 3 TAPE REEL SS8550DBU Full Production $0.058 TO-92 3 BULK SS8550CCHBU Full Production $0.058 TO-92 3 BULK SS8550DCHBU Full Production $0.058 TO-92 3 BULK SS8550DIUBU Full Production $0.058 TO-92 3 BULK SS8550DTA Full Production $0.058 TO-92 3 TAPE REEL file:///C|/PDF/SS8550.html (1 of 2) [27-Jul-02 6:07:05 PM] Product Folder - Fairchild P/N SS8550 - PNP Epitaxial Silicon Transistor * 1,000 piece Budgetary Pricing back to top space Home | Find products | Technical information | Buy products | Support | Company | Contact us | Site index | Privacy policy space (c) Copyright 2002 Fairchild Semiconductor space file:///C|/PDF/SS8550.html (2 of 2) [27-Jul-02 6:07:05 PM] space