BSS670S2LL6327XT - Infineon Technologies AG

2006-12-01

Rev. 2.3 Page 1

BSS670S2L

OptiMOS Buck converter series

Product Summary

VDS 55 V

RDS(on) 650 mΩ

ID0.54 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

PG-SOT 23

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

BSs

Type Package Tape and Reel

BSS670S2L PG-SOT 23 L6327

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

0.54

0.43

A

Pulsed drain current

TA=25°C

ID puls 2.2

Gate source voltage VGS ± 20 V

Power dissipation

TA=25°C

Ptot 0.36 W

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Avalanche energy, single pulse ID = 0.54 A, RG = 25 Ω 1) EAS 8.1 mJ

Avalanche rated 1)

•

• •

1)

Valid from devices with date code 0604 onwards

2006-12-01

Rev. 2.3 Page 2

BSS670S2L

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 3) RthJS - - 290 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

RthJA

-

350

300

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=1mA

V(BR)DSS 55 - - V

Gate threshold voltage, VGS = VDS

ID=2.7µA

VGS(th) 1.2 1.6 2

Zero gate voltage drain current

VDS=55V, VGS=0, Tj=25°C

VDS=55V, VGS=0, Tj=150°C

IDSS

-

0.01

1

0.1

10

µA

Gate-source leakage current

VGS=20V, VDS=0V

IGSS -1 100 nA

Drain-source on-state resistance

VGS=4.5V, ID=270mA

RDS(on) -430 825 mΩ

Drain-source on-state resistance

VGS=10V, ID=270mA

RDS(on) -346 650

2)

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2006-12-01

Rev. 2.3 Page 3

BSS670S2L

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=0.54A

0.6 1.2 -S

Input capacitance Ciss VGS=0, VDS=25V,

f=1MHz

-56 75 pF

Output capacitance Coss -13 18

Reverse transfer capacitance Crss -7 10

Turn-on delay time td(on) VDD=30V, VGS=4.5V,

ID=0.54A,

RG=130Ω

-9 14 ns

Rise time tr-25 37

Turn-off delay time td(off) -21 31

Fall time tf-24 32

Gate Charge Characteristics

Gate to source charge Qgs VDD=40V, ID=0.54A -0.19 0.25 nC

Gate to drain charge Qgd -0.57 0.86

Gate charge total QgVDD=40V, ID=0.54A,

VGS=0 to 10V

-1.7 2.26

Gate plateau voltage V(plateau) VDD=40V, ID=0.54A -3.1 -V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - 0.38 A

Inv. diode direct current, pulsed ISM - - 2.2

Inverse diode forward voltage VSD VGS=0, IF=0.54A -0.8 1.1 V

Reverse recovery time trr VR=30V, IF=lS,

diF/dt=100A/µs

-51 64 ns

Reverse recovery charge Qrr -22 28 nC

2006-12-01

Rev. 2.3 Page 4

BSS670S2L

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

W

0.38 BSS670S2L

Ptot

2 Drain current

ID = f (TA)

parameter: VGS≥ 10 V

0 20 40 60 80 100 120 °C 160

TA

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

A

0.6 BSS670S2L

ID

4 Transient thermal impedance

ZthJS = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

K/W BSS670S2L

ZthJS

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

10 -1 10 0 10 1 10 2

VVDS

-3

10

-2

10

-1

10

0

10

1

10

A

BSS670S2L

ID

R DS(on) = V DS / I D

DC

10 ms

1 ms

100 µs

tp = 23.0µs

2006-12-01

Rev. 2.3 Page 5

BSS670S2L

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

00.5 11.5 22.5 33.5 4 V 5

VDS

0

0.5

1

1.5

2

A

3

ID

3V

3.5V

4V

4.5V

10V

6V

5V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS

00.2 0.4 0.6 0.8 A 1.2

ID

0

100

200

300

400

500

600

700

800

900

1000

1100

1200

mΩ

1500

RDS(on)

3.5V

4V

4.5V

5V

6V

10V

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 80 µs

00.5 11.5 22.5 33.5 4 V 5

VGS

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

A

2.2

ID

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: gfs

00.4 0.8 1.2 1.6 A 2.2

ID

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

S

2.2

gfs

2006-12-01

Rev. 2.3 Page 6

BSS670S2L

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 270 mA, VGS = 10 V

-60 -20 20 60 100 °C 180

Tj

0

200

400

600

800

1000

1200

1400

1600

mΩ

1900 BSS670S2L

RDS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

-60 -20 20 60 100 °C 180

Tj

0

0.5

1

1.5

V

2.5

VGS(th)

2 µA

10 µA

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz

0 5 10 15 20 V30

VDS

0

10

1

10

2

10

3

10

pF

C

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

00.4 0.8 1.2 1.6 22.4 V3

VSD

-2

10

-1

10

0

10

1

10

A

BSS670S2L

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2006-12-01

Rev. 2.3 Page 7

BSS670S2L

13 Typ. gate charge

VGS = f (QGate)

parameter: ID = 0.54 A pulsed

00.4 0.8 1.2 1.6 2nC 2.6

QGate

0

2

4

6

8

10

12

V

16 BSS670S2L

VGS

0,8 VDS max

DS max

V

0,2

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

parameter: ID=10 mA

-60 -20 20 60 100 °C 180

Tj

50

52

54

56

58

60

62

V

66 BSS670S2L

V(BR)DSS

2006-12-01

Rev. 2.3 Page 8

BSS670S2L

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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characteristics.

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

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