NSVRB751V40T1G - ON Semiconductor

September, 2014 − Rev. 5 1Publication Order Number:

RB751V40T1/D

RB751V40T1G

Schottky Barrier Diode

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•Extremely Fast Switching Speed

•Extremely Low Forward Voltage − 0.28 Volts (Typ) @ IF = 1 mAdc

•Low Reverse Current

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Reverse Voltage VRM 40 V

Reverse Voltage VR30 Vdc

Forward Continuous Current (DC) IF30 mA

Peak Forward Surge Current IFSM 500 mA

Electrostatic Discharge ESD HBM Class: 1C

MM Class: A

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD200

1.57

mW/°C

Thermal Resistance

Junction−to−Ambient RqJA 635 °C/W

Junction and Storage

Temperature Range TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR−5 Minimum Pad

40 V SCHOTTKY

BARRIER DIODE

Device Package Shipping†

ORDERING INFORMATION

SOD−323

CASE 477

STYLE 1

CATHODE

ANODE

5E = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

5E MG

RB751V40T1G SOD−323

(Pb−Free) 3000 / Tape &

Reel

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NSVRB751V40T1G SOD−323

(Pb−Free) 3000 / Tape &

Reel

RB751V40T1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 μA) V(BR)R 30 − − Volts

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz) CT− 2.0 2.5 pF

Reverse Leakage

(VR = 30 V) IR− 300 500 nAdc

Forward Voltage

(IF = 1.0 mAdc) VF− 0.28 0.37 Vdc

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2 k

820 Ω

0.1 μF

DUT

100 μH

0.1 μF

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

trtpt

10%

90%

trr t

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

RB751V40T1G

http://onsemi.com

25°C

125°C

85°C

TA = 150°C

0 0.05

VF, FORWARD VOLTAGE (VOLTS)

0.1

1.0

0.1

85°C

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

VR, REVERSE VOLTAGE (VOLTS)

0.5

CT, CAPACITANCE (pF)

2.0 4.0

IF, FORWARD CURRENT (mA)

Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse

Voltage

Figure 4. Typical Capacitance

-40°C

25°C

IR, REVERSE CURRENT (μA)

-55°C

150°C

125°C

1000

0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 10 15 20 25 30 35

1.0

1.5

2.0

2.5

3.0

6.0 8.0 10 12 14 16 18

100

RB751V40T1G

http://onsemi.com

PACKAGE DIMENSIONS

SOD−323

CASE 477−02

ISSUE H

STYLE 1:

PIN 1. CATHODE

2. ANODE

1.60

0.063

0.63

0.025 0.83

0.033

2.85

0.112

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING

WITH SOLDER PLATING.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

5. DIMENSION L IS MEASURED FROM END OF RADIUS.

NOTE 3

12bE

CNOTE 5

DIM MIN NOM MAX

MILLIMETERS

A0.80 0.90 1.00

A1 0.00 0.05 0.10

A3 0.15 REF

b0.25 0.32 0.4

C0.089 0.12 0.177

D1.60 1.70 1.80

E1.15 1.25 1.35

0.08

2.30 2.50 2.70

0.031 0.035 0.040

0.000 0.002 0.004

0.006 REF

0.010 0.012 0.016

0.003 0.005 0.007

0.062 0.066 0.070

0.045 0.049 0.053

0.003

0.090 0.098 0.105

MIN NOM MAX

INCHES

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

RB751V40T1/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative

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