FDN337NL99Z - Fairchild Semiconductor Corporation

March 1998

FDN337N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter FDN337NUnits

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage - Continuous ±8V

IDDrain/Output Current - Continuous 2.2 A

- Pulsed 10

PDMaximum Power Dissipation (Note 1a)0.5 W

(Note 1b) 0.46

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

FDN337N Rev.C

2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V

RDS(ON) = 0.082 Ω @ VGS = 2.5 V.

Industry standard outline SOT-23 surface mount

package using proprietary SuperSOTTM-3 design for

superior thermal and electrical capabilities.

High density cell design for extremely low RDS(ON).

Exceptional on-resistance and maximum DC current

capability.

SuperSOTTM-3 N-Channel logic level enhancement mode

power field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. These devices are particularly suited for

low voltage applications in notebook computers, portable

phones, PCMCIA cards, and other battery powered circuits

where fast switching, and low in-line power loss are needed

in a very small outline surface mount package.

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

G

D

S

SuperSOT -3

TM

337

D

S

G

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC41 mV/ oC

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA

TJ = 55°C 10 µA

IGSSF Gate - Body Leakage, Forward VGS = 8 V,VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA

ON CHARACTERISTICS (Note)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA0.4 0.7 1V

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC-2.3 mV/ oC

RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 2.2 A 0.054 0.065 Ω

TJ =125°C 0.08 0.11

VGS = 2.5 V, ID = 2 A0.07 0.082

ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A

gFS Forward Transconductance VDS = 5 V, ID = 2.2 A 13 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 10 V, VGS = 0 V,

f = 1.0 MHz 300 pF

Coss Output Capacitance 145 pF

Crss Reverse Transfer Capacitance 35 pF

SWITCHING CHARACTERISTICS (Note)

tD(on)Turn - On Delay Time VDD = 5 V, ID = 1 A,

VGS = 4.5 V, RGEN = 6 Ω4 10 ns

trTurn - On Rise Time 10 18 ns

tD(off) Turn - Off Delay Time 17 28 ns

tfTurn - Off Fall Time 4 10 ns

QgTotal Gate Charge VDS = 10 V, ID = 2.2 A,

VGS = 4.5 V 7 9 nC

Qgs Gate-Source Charge 1.1 nC

Qgd Gate-Drain Charge 1.9 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current 0.42 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note)0.65 1.2 V

Note:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment :

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDN337N Rev.C

a. 250oC/W when mounted on a

0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on

a 0.001 in2 pad of 2oz Cu.

FDN337N Rev.C

00.3 0.6 0.9 1.2 1.5

0

1

2

3

4

5

6

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

2.5

V = 4.5V

GS

2.0

1.5

DS

D

3.0

01234 5 6

0.8

1

1.2

1.4

1.6

1.8

2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 2.0V

GS

3.5

3.0

4.5

D

2.5

R DS(ON), NORMALIZED

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate

-50 -25 025 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = 4.5 V

GS

I = 2.2A

D

R , NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation

with Temperature.

00.5 11.5 22.5

0

1

2

3

4

5

6

7

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 5.0V

DS

GS

D

T = -55°C

J

Figure 5. Transfer Characteristics.

00.2 0.4 0.6 0.8 1

0.0001

0.001

0.01

0.1

0.5

2

4

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

12345

0

0.05

0.1

0.15

0.2

0.25

V , GATE TO SOURCE VOLTAGE (V)

GS

R , ON-RESISTANCE (OHM)

DS(ON)

125°C

25°C

I = 1.1A

D

FDN337N Rev.C

02468

0

1

2

3

4

5

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 2.2A

D

15V

V = 5V

DS

10V

0.1 0.5 1 2 510 20 50

0.01

0.03

0.1

0.3

1

2

5

10

20

V , DRAI N-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

DS

D

DC

1s

100ms

10s

1ms

RDS(ON) LIMIT

V = 4.5V

SINGLE PULSE

R =250 °C/W

T = 25°C

GS

A

θJA

10ms

0.0001 0.001 0.01 0.1 1 10 100 300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =270° C/W

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1b.

Transient thermal response will change depending on the circuit board design.

0.1 0.2 0.5 1 2 5 10 20

20

50

100

200

500

1000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Characteristics (continued)

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

R (t) = r(t) * R

R = 270 °C/W

Duty Cycle, D = t /t

1 2

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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STAR*POWER™

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