BSS138K-7 - DIODES INC - Datasheet.Company

BSS138K

Document number: DS39383 Rev. 3 - 2

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October 2019

NEW PROD UCT

BSS138K

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) Max

ID Max

TA = +25°C

50V

3.5Ω @ VGS = 10V

0.31A

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Load Switch

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q101, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

contact us or your local Diodes representative.

 https://www.diodes.com/quality/product-definitions/

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.009 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

BSS138K-7

SOT23

3,000/Tape & Reel

BSS138K-13

SOT23

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Date Code Key

Year

2018

2019

2020

2021

2022

2023

2024

2025

2026

Code

F

G

H

I

J

K

L

M

N

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

Internal Schematic

Top View

D

GS

38K = Product Type Marking Code

YM = Date Code Marking

Y or Y= Year (ex: G = 2019)

M = Month (ex: 9 = September)

ESD Protected Gate

22K

YM

D

S

G

Gate Protection

Diode

38K

e3

BSS138K

Document number: DS39383 Rev. 3 - 2

2 of 7

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October 2019

NEW PROD UCT

BSS138K

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

50

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

0.31

0.25

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

0.5

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

0.8

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

0.38

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

338

°C/W

Total Power Dissipation (Note 6)

PD

0.54

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

237

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

50

—

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

1

µA

VDS = 50V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

µA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.5

1.1

1.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

1.3

3.5

Ω

VGS = 10V, ID = 0.22A

Diode Forward Voltage

VSD

—

0.8

1.2

V

VGS = 0V, ID = 0.22A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

23.2

—

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

3.1

—

pF

Reverse Transfer Capacitance

Crss

—

2.2

—

pF

Gate Resistance

Rg

—

69

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

0.45

—

nC

VDS = 25V, ID = 0.2A

Total Gate Charge (VGS = 10V)

Qg

—

0.95

—

nC

Gate-Source Charge

Qgs

—

0.10

—

nC

Gate-Drain Charge

Qgd

—

0.14

—

nC

Turn-On Delay Time

tD(ON)

—

3.2

—

ns

VDS = 25V, VGS = 10V,

RG = 50Ω, ID = 0.2A

Turn-On Rise Time

tR

—

2.5

—

ns

Turn-Off Delay Time

tD(OFF)

—

13.8

—

ns

Turn-Off Fall Time

tF

—

7.6

—

ns

Reverse Recovery Time

tRR

—

8.8

—

ns

IF = 0.2A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

2.6

—

nC

IF = 0.2A, di/dt = 100A/μs

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

BSS138K

Document number: DS39383 Rev. 3 - 2

3 of 7

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October 2019

NEW PROD UCT

BSS138K

0.0

0.2

0.4

0.6

0.8

0 1 2 3 4 5

V = 2.5V

GS

V = 10V

GS

V = 6V

GS

V = 5V

GS

V = 4V

GS V = 3V

GS

V = 2V

GS

V = 1.8V

GS

I , DRAIN CURRENT (A)

D

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristic

0

0.1

0.2

0.3

0.4

0.5

0.6

0.5 1 1.5 2 2.5 3 3.5

V = 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

AT = 25°C

A

T = -55°C

A

I , DRAIN CURRENT (A)

D

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

1

1.2

1.4

1.6

1.8

2

2.2

0 0.2 0.4 0.6 0.8

V = 10V

GS

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

0 4 8 12 16 20

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

I = 0.22A

D

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0 0.2 0.4 0.6 0.8

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 10V

GS

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

V = 4.5V

GS

I = 0.22A

D

V = 10V

GS

I = 0.22A

D

R , DRAIN-SOURCE

DS(ON)

ON-RESISTANCE (NORMALIZED)

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

BSS138K

Document number: DS39383 Rev. 3 - 2

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NEW PROD UCT

BSS138K

0.5

1

1.5

2

2.5

3

-50 -25 0 25 50 75 100 125 150

V = 4.5V

GS

I = 0.22A

D

V = 10V

GS

I = 0.22A

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

0

0.2

0.4

0.6

0.8

0 0.3 0.6 0.9 1.2 1.5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

I , SOURCE CURRENT (A)

S

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

1

10

100

010 20 30 40 50

Ciss

Coss

Crss

f=1MHz

C , JUNCTION CAPACITANCE (pF)

T

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1

V = 25V

DS

I = 0.2A

D

V GATE THRESHOLD VOLTAGE (V)

GS

Q , TOTAL GATE CHARGE (nC)

gFigure 11 Gate Charge

0.001

0.01

0.1

1

0.1 1 10 100

RDS(on)

Limited

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T = 150°C

J(max)

T = 25°C

C

V = 10V

GS

Single Pulse

DUT on 1 * MRP Board

I , DRAIN CURRENT (A)

D

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

0.6

0.8

1

1.2

1.4

-50

-25

0

25

50

75

100

125

150

I

= 1mA

D

I

= 250µA

D

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

t

h

)

T

, AMBIENT TEMPERATURE (

C)

A



Figure 8 Gate Threshold Variation vs. Ambient Temperature

VGS(TH), GATE THRESHOLD VOLTAGE (V)

VGS, GATE-SOURCE VOLTAGE (V)

BSS138K

Document number: DS39383 Rev. 3 - 2

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NEW PROD UCT

BSS138K

0.001

0.01

0.1

1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

R (t) = r(t) * R

 JA JA

R = 321°C/W

JA

Duty Cycle, D = t1/ t2

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

BSS138K

Document number: DS39383 Rev. 3 - 2

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October 2019

NEW PROD UCT

BSS138K

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

Dim

Min

Max

Typ

A

0.37

0.51

0.40

B

1.20

1.40

1.30

C

2.30

2.50

2.40

D

0.89

1.03

0.915

F

0.45

0.60

0.535

G

1.78

2.05

1.83

H

2.80

3.00

2.90

J

0.013

0.10

0.05

K

0.890

1.00

0.975

K1

0.903

1.10

1.025

L

0.45

0.61

0.55

L1

0.25

0.55

0.40

M

0.085

0.150

0.110

a

0°

8°

--

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

Dimensions

Value (in mm)

C

2.0

X

0.8

X1

1.35

Y

0.9

Y1

2.9

J

K1 K

L1

GAUGE PLANE

0.25

H

L

M

All 7°

A

CB

D

G

F

a

X

Y

Y1 C

X1

BSS138K

Document number: DS39383 Rev. 3 - 2

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NEW PROD UCT

BSS138K

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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