BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Features BVDSS RDS(ON) Max ID Max TA = +25C 50V 3.5 @ VGS = 10V 0.31A Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Load Switch Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate) D D G S G ESD Protected Gate Gate Protection Diode Top View S Internal Schematic Top View Ordering Information (Note 4) Part Number BSS138K-7 BSS138K-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 38K 22K Date Code Key Year Code Month Code 2018 F Jan 1 2019 G Feb 2 BSS138K Document number: DS39383 Rev. 3 - 2 2020 H Mar 3 38K = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: G = 2019) M = Month (ex: 9 = September) YM NEW PRODUCT Product Summary Apr 4 2021 I May 5 2022 J Jun 6 1 of 7 www.diodes.com 2023 K Jul 7 Aug 8 2024 L Sep 9 2025 M Oct O 2026 N Nov N Dec D October 2019 (c) Diodes Incorporated BSS138K Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25C TA = +70C Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V Value 50 20 0.31 0.25 0.5 0.8 ID IS IDM Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Steady State Steady State Value 0.38 338 0.54 237 -55 to +150 Unit W C/W W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: TJ = +25C Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 50 -- -- -- -- -- -- 1 10 V A A VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) 0.5 1.1 1.5 V VDS = VGS, ID = 250A RDS(ON) -- 1.3 3.5 VGS = 10V, ID = 0.22A VSD -- 0.8 1.2 V VGS = 0V, ID = 0.22A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- -- 23.2 3.1 2.2 69 0.45 0.95 0.10 0.14 3.2 2.5 13.8 7.6 8.8 2.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- pF pF pF nC nC nC nC ns ns ns ns ns nC VDS = 25V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 25V, ID = 0.2A VDS = 25V, VGS = 10V, RG = 50, ID = 0.2A IF = 0.2A, di/dt = 100A/s IF = 0.2A, di/dt = 100A/s 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. BSS138K Document number: DS39383 Rev. 3 - 2 2 of 7 www.diodes.com October 2019 (c) Diodes Incorporated BSS138K 0.8 VGS = 10V 0.6 VGS = 4V VDS = 5.0V VGS = 3V VGS = 6V 0.5 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 0.6 VGS = 2.5V 0.4 0.4 T A = 150C 0.3 T A = 125C T A = 85C 0.2 T A = 25C T A = -55C 0.2 VGS = 2V 0.1 VGS = 1.8V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 0.5 5 2.2 1.8 1.6 VGS = 10V 1.4 1.2 0 0.2 0.4 0.6 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 1 1 1.5 2 2.5 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3.5 2.8 2.6 2.4 2.2 ID = 0.22A 2 1.8 1.6 1.4 1.2 5 1 0 4 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2 VGS = 10V VGS = 10V 4.5 I D = 0.22A 1.8 4 RDS(ON), DRAIN-SOURCE O N-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 0.0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) NEW PRODUCT VGS = 5V 3.5 3 T A = 125C T A = 150C 2.5 2 1.5 1 T A = 85C TA = 25C T A = -55C 0.5 0 0 0.2 0.4 0.6 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature BSS138K Document number: DS39383 Rev. 3 - 2 0.8 3 of 7 www.diodes.com 1.6 VGS = 4.5V I D = 0.22A 1.4 1.2 1 0.8 0.6-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature October 2019 (c) Diodes Incorporated 2.5 )V ( E G A T 1.2 L O V D L O H S 1 E R H T E T A G 0.8 , h) VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 1.4 3 VGS = 4.5V I D = 0.22A 2 VGS = 10V I D = 0.22A 1.5 1 I D = 1mA ID = 250A (tS G V 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 100 CT , JUNCTION CAPACITANCE (pF) I S, SOURCE CURRENT (A) f=1MHz 0.6 T A = 150C 0.4 T A = 125C T A = 85C TA = 25C T A = -55C 0.2 0 0 Ciss 10 Coss C rss 1 0 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 10 20 30 40 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 50 1 RDS(on) Limited 8 ID , DRAIN CURRENT (A) GS, GATE-SOURCE VGSVGATE THRESHOLD VOLTAGE VOLTAGE (V) NEW PRODUCT BSS138K 6 4 VDS = 25V I D = 0.2A 2 0 0 DC 0.1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.01 TJ (m ax ) = 150C PW = 100s TC = 25C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.2 0.4 0.6 0.8 Qg , TOTAL GATE CHARGE (nC) Figure 11 Gate Charge BSS138K Document number: DS39383 Rev. 3 - 2 1 4 of 7 www.diodes.com 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 October 2019 (c) Diodes Incorporated BSS138K NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JA(t) = r(t) * R JA R JA = 321C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.000001 0.00001 BSS138K Document number: DS39383 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 October 2019 (c) Diodes Incorporated BSS138K Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H NEW PRODUCT K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X BSS138K Document number: DS39383 Rev. 3 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com October 2019 (c) Diodes Incorporated BSS138K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2019, Diodes Incorporated www.diodes.com BSS138K Document number: DS39383 Rev. 3 - 2 7 of 7 www.diodes.com October 2019 (c) Diodes Incorporated