BSR16 - APTINA IMAGING - Datasheet.Company

September, 2020 − Rev. 1

1Publication Order Number:

BSR16/D

PNP Epitaxial Silicon

Transistor

BSR16

PNP General Purpose Amplifier

•This Device Designed for Use as General Purpose Amplifier and

Switches Requiring Collector Currents to 500 mA

•Sourced from Process 63

•See BCW68G for Characteristics

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, unless otherwise specified.)

Symbol Parameter Value Unit

VCEO Collector−Emitter Voltage −60 V

VCBO Collector−Base Voltage −60 V

VEBO Emitter−Base Voltage −5.0 V

ICCollector Current − Continuous −800 mA

TJ, TST Operating and Storage Junction

Temperature Range

−55 ~ +150 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady state limits. The factory should be consulted on applications

involving pulsed or low duty cycle operations.

THERMAL CHARACTERISTICS

(TA = 25°C, unless otherwise specified)

Symbol Parameter Max. Unit

PDTotal Device Dissipation

Derate above 25_C

350

2.8

mW/_C

RθJA Thermal Resistance, Junction to

Ambient

357 _C/W

3. Device mounted on FR−4 PCB 40 mm × 40 mm × 1.5 mm.

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MARKING DIAGRAM

SOT−23

CASE 318BM

&Y ON Semiconductor Logo

T8 Specific Device Code

&E Designates Space

&G Date Code (Week)

Device Package Shipping†

ORDERING INFORMATION

BSR16 SOT−23

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

T8&E&G

PIN ASSIGNMENT

1. Base 2. Emitter

3. Collector

BSR16

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ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BV(BR)CEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −60 V

BV(BR)CBO Collector−Base Breakdown Voltage IC = −100 mA, IE = 0 −60 V

BV(BR)EBO Emitter−Base Breakdown Voltage IE = −10 mA, IC = 0 −5.0 V

ICBO Collector Cut−off Current VCB = −50 V

VCB = −50 V, TA = 150_C

−10

ICEX Collector Cut−off Current VCE = −30 V, VEB = −0.5 V −50 nA

IBEX Reverse Base Current VCE = −30 V, VEB = −3.0 V −50 nA

ON CHARACTERISTICS

hFE DC Current Gain IC = −0.1 mA, VCE = −10 V

IC = −1.0 mA, VCE = −10 V

IC = −10 mA, VCE = −10 V

IC = −150 mA, VCE = −10 V

IC = −500 mA, VCE = −10 V

100

300

VCE(sat) Collector−Emitter Saturation Voltage IC = −150 mA, IB = −15 mA

IC = −500 mA, IB = −50 mA

−0.4

−1.6

VBE(sat) Base−Emitter Saturation Voltage IC = −150 mA, IB = −15 mA

IC = −500 mA, IB = −50 mA

−1.3

−2.6

SMALL SIGNAL CHARACTERISTICS

fTCurrent Gain Bandwidth Product IC = −50 mA, VCE = −20 V,

f = 100 MHz, TA = 25_C

200 MHz

Ccb Output Capacitance VCB = −10 V, IE = 0, f = 1.0 MHz 8.0 pF

Ceb Emitter−Base Capacitance VCB = −2.0 V, IE = 0, f = 1.0 MHz 30 pF

SWITCHING CHARACTERISTICS

ton Turn−On Time VCC = −30 V, IC = −150 mA,

IB1 = −15 mA

45 ns

tdDelay Time 10 ns

trRise Time 40 ns

toff Turn−Off Time VCC = −6 V, IC = −150 mA,

IB1 = IB2 = −15 mA

100 ns

tsStorage Time 80 ns

tfFall Time 30 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

SOT−23

CASE 318BM

ISSUE O

DATE 31 AUG 2016

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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