V
RRM
= 50 V - 1000 V
I
F
= 10 A
Features
• Types up to 1000 V V
RRM
BR-10 Package
• Low forward voltage drop
• Low leakage current
Mechanical Data
Case: Molded plastic body
Polarity: Marked on body
Mounting position: Any
Mounting: Hole for number 6 screw
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
V
Silicon Bridge
Rectifier
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
600 1000
Conditions BR106 BR108 BR1010
800
BR106 thru BR1010
pp g
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
μA
9.40
10 10 10
150 150 150
700
1000
1.1
1000
800600
10
BR1010
1.1
10 10
-65 to 150 -65 to 150
-65 to 150 -65 to 150 -65 to 150
BR106
9.40 9.40
V
R
= 50 V, T
j
= 100 °C 1000 1000
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
50 °C
Conditions
560420
BR108
V
R
= 50 V, T
j
= 25 °C
I
F
= 5 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
1.1
-65 to 150
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BR106 thru BR1010
www.genesicsemi.com 2
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Authorized Distributor
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GeneSiC Semiconductor:
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