1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar app lications in the 1.2 GHz to
1.4 GHz range.
1.2 Features and benefits
T yp ical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply volt age
of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %:
Output power = 500 W
Power gain = 17 dB
Efficiency = 50 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g re str icti on of hazardous substances
(RoHS)
BLL6H1214-500
LDMOS L-band radar power transistor
Rev. 02 — 1 April 2010 Product data sheet
Table 1. Test information
Typical RF performance at Tcase =25
°
C; tp = 300
μ
s;
δ
= 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Mode of operation f VDS PLGpηDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 1.2 to 1.4 50 500 17 50 20 6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 2 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
3
5
1
2
sym11
7
Table 3. Ordering i nformation
Type number Package
Name Description Version
BLL6H1214-500 - flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads SOT539A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 45 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 3 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
5. Thermal characteristics
6. Characteristics
6.1 Ruggedness in class-AB operation
The BLL6H1214-500 is capable of withstan ding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =50V;
IDq =150mA; P
L=500W; t
p = 300 μs; δ = 10 %.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-c) transient thermal impedance from
junction to case Tcase =85°C; PL=500W
tp = 100 μs; δ= 10 % 0.07 K/W
tp = 200 μs; δ= 10 % 0.08 K/W
tp = 300 μs; δ=10% 0.1 K/W
tp = 100 μs; δ=20% 0.1 K/W
Table 6. DC characteristics
Tj = 25
°
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 2.7 mA 100 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 270 mA 1.3 1.8 2.2 V
IDSS drain leakage current VGS =0V; V
DS =50V--1.4μA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 32 42 - A
IGSS gate leakage current VGS =11V; V
DS =0V--140nA
gfs forward transconductance VDS =10V; I
D= 270 mA 1.7 3 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=9.5A -100164mΩ
Table 7. RF characteristics
Mode of operation: pulsed RF; tp = 300
μ
s;
δ
= 10 %; RF performance at VDS =50V; I
Dq = 150 mA;
Tcase =25
°
C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power 500 - - W
VDS drain-source voltage PL=500W--50V
Gppower gain PL=500W 1517- dB
RLin input return loss PL=500W - 10 - dB
PL(1dB) output power at 1 dB gain compression - 600 - W
ηDdrain efficiency PL=500W 4550- %
Pdroop(pulse) pulse droop power PL=500W - 0 0.3 dB
trrise time PL= 500 W - 20 50 ns
tffall time PL=500W - 6 50 ns
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 4 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7. Application information
7.1 Impedance information
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f ZSZL
GHz Ω Ω
1.2 1.268 − j2.623 2.987 − j1.664
1.3 2.193 − j2.457 2.162 − j1.326
1.4 2.359 − j2.052 1.604 − j1.887
Fig 1. Definition of transis tor imp e da nc e
001aaf05
9
drain
ZL
ZS
gate
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 5 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2 RF performance
7.2.1 Performance curves measured with δ =10%, t
p= 300 μs and Ths =25°C
VDS = 50 V; tp = 300 μs; δ = 10 % ; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
Fig 2. Output power as a function of input power;
typical valu e s Fig 3. Power gain as a function of load power;
typical values
Pi (W)
0161248
001aak751
400
500
300
200
100
600
700
PL
(W)
0
(1)
(2)
(3)
(4)
(5)
PL (W)
700500100 6004002000 300
001aak752
10
5
15
20
Gp
(dB)
0
(1)
(2)
(3)
(4)
(5)
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 6 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
VDS = 50 V; tp = 300 μs; δ = 10 % ; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA.
Fig 4. Drain efficiency as a func tion of load power;
typical values Fig 5. Power gain and d rain efficiency as function of
frequency; typical values
PL (W)
0 200 400 600 700500300100
001aak753
20
40
60
ηD
(%)
0
(1)
(2)
(3)
(4)
(5)
f (MHz)
1175 142513751275 13251225
001aak754
14
16
12
18
20
Gp
(dB)
10
30
40
20
50
60
ηD
(%)
10
ηD
Gp
PL = 500 W; VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA.
Fig 6. Input return loss as a func tion of frequency; typical value
f (MHz)
1175 142513751275 13251225
001aak755
−15
−10
−20
−5
0
RLin
(dB)
−25
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 7 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.2 Performance curves measured with δ=10%, t
p= 300 μs and Ths =65°C
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 7. Output power as a function of input power;
typical valu e s Fig 8. Power gain as a function of load power;
typical values
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
PL = 250 W; VDS = 50 V; tp = 300 μs; δ = 10 %;
IDq = 100 mA.
Fig 9. Drain efficiency as a func tion of load power;
typical values Fig 10. Power gain and drain efficiency as function of
frequency; typical values
Pi (W)
018126
001aak756
700
PL
(W)
0
100
200
300
400
500
600 (1)
(2)
(3)
PL (W)
0 200 400 600 700500300100
001aak757
6
12
18
Gp
(dB)
0
(1)
(2)
(3)
PL (W)
0 200 400 600 700500300100
001aak758
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aak759
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 8 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.3 Performance curves measured with δ=10%, t
p= 300 μs and f = 1300 MHz
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 11. Output power as a function of input power;
typical valu e s Fig 12. Power gain as a function of load power;
typical values
Pi (W)
0252010 155
001aal688
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W)
700500100 6004002000 300
001aal689
14
12
18
20
Gp
(dB)
10
16 (1)
(2)
(3)
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA; f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 13. Drain efficiency as a function of load power; typical values
PL (W)
0 200 400 600 700500300100
001aal690
20
40
60
ηD
(%)
0
(1)
(2)
(3)
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 9 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.4 Performance curves measured with δ=20%, t
p= 500 μs and Ths =25°C
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 14. Output power as a function of input power;
typical valu e s Fig 15. Power gain as a function of load power;
typical values
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
Fig 16. Drain efficiency as a function of load power;
typical values Fig 17. Power gain and drain efficiency as function of
frequency; typical values
Pi (W)
0252010 155
001aal691
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W)
700500100 6004002000 300
001aal692
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
PL (W)
0 200 400 600 700500300100
001aal693
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal694
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 10 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.5 Performance curves measured with δ=20%, t
p= 500 μs and Ths =65°C
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 18. Output power as a function of input power;
typical valu e s Fig 19. Power gain as a function of load power;
typical values
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
Fig 20. Drain efficiency as a function of load power;
typical values Fig 21. Power gain and drain efficiency as function of
frequency; typical values
Pi (W)
0252010 155
001aal695
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W)
700500100 6004002000 300
001aal696
14
12
18
20
Gp
(dB)
10
16
(1)
(2)
(3)
PL (W)
0 200 400 600 700500300100
001aal697
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal698
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 11 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.6 Performance curves measured with δ=20%, t
p= 500 μs and f = 1300 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 22. Output power as a function of input power;
typical valu e s Fig 23. Power gain as a function of load power;
typical values
Pi (W)
0252010 155
001aal699
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W)
700500100 6004002000 300
001aal700
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 24. Drain efficiency as a function of load power; typical values
PL (W)
0 200 400 600 700500300100
001aal701
20
40
60
ηD
(%)
0
(1)
(2)
(3)
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 12 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.7 Performance curves measured with δ=10%, t
p= 1 ms and Ths =25°C
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 25. Output power as a function of input power;
typical valu e s Fig 26. Power gain as a function of load power;
typical values
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
Fig 27. Drain efficiency as a function of load power;
typical values Fig 28. Power gain and drain efficiency as function of
frequency; typical values
Pi (W)
0252010 155
001aal702
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W)
700500100 6004002000 300
001aal703
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
PL (W)
0 200 400 600 700500300100
001aal704
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal705
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 13 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.8 Performance curves measured with δ=10%, t
p= 1 ms and Ths =65°C
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 29. Output power as a function of input power;
typical valu e s Fig 30. Power gain as a function of load power;
typical values
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA.
Fig 31. Drain efficiency as a function of load power;
typical values Fig 32. Power gain and drain efficiency as function of
frequency; typical values
Pi (W)
0252010 155
001aal706
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W)
700500100 6004002000 300
001aal707
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
PL (W)
0 200 400 600 700500300100
001aal708
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal709
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 14 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
7.2.9 Performance curves measured with δ=10%, t
p= 1 ms and f = 1300 MHz
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 33. Output power as a function of input power;
typical valu e s Fig 34. Power gain as a function of load power;
typical values
Pi (W)
0252010 155
001aal710
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W)
700500100 6004002000 300
001aal711
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 35. Drain efficiency as a function of load power; typical values
PL (W)
0 200 400 600 700500300100
001aal712
20
40
60
ηD
(%)
0
(1)
(2)
(3)
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 15 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
8. Test information
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 800B or capacitor of same quality.
Table 9. List of components
For test circuit see Figure 36.
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 22 μF; 35 V
C2 multilayer ceramic chip capacitor 51 pF [1]
C3, C4 multilayer ceramic chip capacitor 100 pF [1]
C5, C11, C12 multilayer ceramic chip capacitor 1 nf [2]
C6 multilayer ceramic chip capacitor 47 pF [1]
C7, C8, C10 multilayer ceramic chip capacitor 51 pF [3]
C9 multilayer ceramic chip capacitor 100 pF [3]
C13 electrolytic capacitor 10 μF; 63 V
R1 SMD resistor 56 Ω0603
R2 metal film resistor 51 Ω
Printed-Circuit Board (PCB): Duroid 6006; εr = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm.
See Table 9 for a list of components.
Fig 36. Component layout for class-AB production test circuit
001aaj49
0
C1 C2
R1
C3 C4 C5
R2
C6
C8 C9
C10
C11
C12
C13
C7
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 16 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
9. Package outline
Fig 37. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 10-02-02
00-03-03
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
F
langed balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539
A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 17 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor T ransistor
RF Radio Frequency
SMD Surface Mounted Device
L-band Long wave Band
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLL6H1214-500_2 20100401 Product data sheet - BLL6H1214-500_1
Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•The status of this data sheet has been changed to “Product data sheet”
•Added Section 7.2.3 on page 8.
•Added Section 7.2.4 on page 9.
•Added Section 7.2.5 on page 10.
•Added Section 7.2.6 on page 11.
•Added Section 7.2.7 on page 12.
•Added Section 7.2.8 on page 13.
•Added Section 7.2.9 on page 14.
BLL6H1214-500_ 1 20090120 Objective data sheet - -
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 18 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductor s.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or envi ronmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or application s and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liabil ity related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application /use or t he application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and t he
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property right s.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that t his specific NXP Semiconductors product is automotive qualified,
the product is not suit ab le for aut omotive u se. It is neit her qua lifi ed n or test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclu sio n and/or use of
non-automotive qualifie d products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and st andards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] data sheet Production This document contains the product specification.
BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 April 2010 19 of 20
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
product for such au tomotive applications, use and specifi cations, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive appl ications beyond NXP Semi conductors’
standard warrant y and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLL6H1214-500
LDMOS L-band radar power transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 April 2010
Document identifier: BLL6H1214-500_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
7.2.1 Performance curves measured with δ=10%,
tp=300μs and Ths =25°C . . . . . . . . . . . . . . . 5
7.2.2 Performance curves measured with δ=10%,
tp=300μs and Ths =65°C . . . . . . . . . . . . . . . 7
7.2.3 Performance curves measured with δ=10%,
tp=300μs and f = 1300 MHz. . . . . . . . . . . . . . 8
7.2.4 Performance curves measured with δ=20%,
tp=500μs and Ths =25°C . . . . . . . . . . . . . . . 9
7.2.5 Performance curves measured with δ=20%,
tp=500μs and Ths =65°C . . . . . . . . . . . . . . 10
7.2.6 Performance curves measured with δ=20%,
tp=500μs and f = 1300 MHz. . . . . . . . . . . . . 11
7.2.7 Performance curves measured with δ=10%,
tp= 1 ms and Ths =25°C. . . . . . . . . . . . . . . . 12
7.2.8 Performance curves measured with δ=10%,
tp= 1 ms and Ths =65°C. . . . . . . . . . . . . . . . 13
7.2.9 Performance curves measured with δ=10%,
tp= 1 ms and f = 1300 MHz . . . . . . . . . . . . . . 14
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 15
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13 Contact information. . . . . . . . . . . . . . . . . . . . . 19
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
