PD -91885A IRFBC40A SMPS MOSFET HEXFET(R) Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001) VDSS Rds(on) max ID 600V 1.2 6.2A TO-220AB G DS Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw 6.2 3.9 25 125 1.0 30 6.0 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies: l Single Transistor Forward Notes through www.irf.com are on page 8 1 6/24/99 IRFBC40A Static @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- V(BR)DSS Typ. --- 0.66 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.2 VGS = 10V, ID = 3.7A 4.0 V VDS = VGS, ID = 250A 25 VDS = 600V, VGS = 0V A 250 VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.4 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 13 23 31 18 1036 136 7.0 1487 36 48 Max. Units Conditions --- S VDS = 50V, ID = 3.7A 42 I D = 6.2A 10 nC VDS = 480V 20 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 6.2A ns --- RG = 9.1 --- RD = 47,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 570 6.2 13 mJ A mJ Typ. Max. Units --- 0.50 1.0 --- 62 C/W Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS I SM VSD t rr Q rr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 6.2 showing the A G integral reverse --- --- 25 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 6.2A, VGS = 0V --- 431 647 ns TJ = 25C, IF = 6.2A --- 1.8 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFBC40A 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 4.5V 0.1 20s PULSE WIDTH TJJ = 25 C 0.01 0.1 1 10 10 4.5V 1 20s PULSE WIDTH TJJ = 150 C 0.1 1 100 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP TJ = 150 C 10 TJ = 25 C 1 0.1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6.2A ID = 5.9A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFBC40A VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 10000 Coss = Cds + Cgd Ciss 1000 Coss 100 10 Crss VGS , Gate-to-Source Voltage (V) 20 100000 1 ID = 6.2A 5.9A VDS = 480V VDS = 300V VDS = 120V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 1000 8 16 24 32 40 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 10us TJ = 150 C TJ = 25 C 1 0.1 0.4 100us 1ms 1 10ms V GS = 0 V 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFBC40A 7.0 6.0 I D , Drain Current (A) RD V DS VGS D.U.T. RG 5.0 + -V DD 10V 4.0 Pulse Width 1 s Duty Factor 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 1.0 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 P DM 0.10 t1 0.05 t2 0.02 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFBC40A 1400 EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 1200 D R IV E R L VDS BOTTOM ID 2.8A 3.9A 6.2A 1000 D .U .T RG + V - DD IA S 20V A 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V 820 QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. V DSav , Avalanche Voltage ( V ) QGS 800 780 760 740 + V - DS 720 VGS 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 3mA IAV , Avalanche Current ( A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRFBC40A Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFBC40A Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 .8 7 ( .1 1 3 ) 2 .6 2 ( .1 0 3 ) 1 0 .5 4 ( .4 1 5 ) 1 0 .2 9 ( .4 0 5 ) -B - 3 .7 8 ( .1 4 9 ) 3 .5 4 ( .1 3 9 ) 4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6 .4 7 ( .2 5 5 ) 6 .1 0 ( .2 4 0 ) 4 1 5 .2 4 ( .6 0 0 ) 1 4 .8 4 ( .5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 1 4 .0 9 ( .5 5 5 ) 1 3 .4 7 ( .5 3 0 ) 4 .0 6 ( .1 6 0 ) 3 .5 5 ( .1 4 0 ) 3X 3X L E A D A S S IG N M E N T S 1 - GA TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 3 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 ) 0 .9 3 ( .0 3 7 ) 0 .6 9 ( .0 2 7 ) 0 .3 6 ( .0 1 4 ) 3X M B A M 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 2 .9 2 ( .1 1 5 ) 2 .6 4 ( .1 0 4 ) 2 .5 4 (.1 0 0 ) 2X N OTE S: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LO T CO DE 9B1M A IN TE R N A T IO N A L R E C TIF IE R LO GO A SS EMB LY LOT CODE PAR T NUM BER IR F 1 0 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L =29.6mH RG = 25, IAS = 6.2A. (See Figure 12) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 6.2A, di/dt 80A/s, VDD V(BR)DSS, TJ 150C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99 8 www.irf.com