BSX32
October 1988
HIGH-VOLTAGE, HIGH-CURRENT SWITCH
The BSX32 is a silicon planar epitaxial NPN
transistor inJedec TO-39 metal case.It isdesigned
for high voltage,high current switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE=0) 65 V
VCEO Collector-emitter Voltage (IB=0) 40 V
V
EBO Emitter-base Voltage (IC=0) 6 V
ICCollector Current 1 mA
Ptot Total Power Dissipation at Tamb ≤25 °C
at Tcase ≤25 °C0.8
3.5 W
W
Tstg,T
jStorage and Junction Temperature – 55 to 200 °C
DESCRIPTION
TO-39
INTERNAL SCHEMATIC DIAGRAM
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ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current
(IE=0) VCB = 50 V 0.25 4 µA
V(BR)CBO Collector-base Breakdown
Voltage (IE=0) I
C=100µA65 V
V
(BR)CEO* Collector-emitter Breakdown
Voltage (IB=0) I
C=10mA 40 V
V(BR)EBO Emitter-base Breakdown
Voltage (IC=0) I
E=100µA6 V
V
CE(sat)* Collector-emitter Saturation
Voltage IC=100mA
IC=500mA
IC=1A
IB=10mA
IB=50mA
IB= 100 mA
0.17
0.36
0.6
0.25
0.5
0.85
V
V
V
VBE(sat)* Base-emitter Saturation
Voltage IC=100mA
IC=500mA
IC=1A
IB=10mA
IB=50mA
IB= 100 mA
0.8 0.9
1.5
2
V
V
V
hFE* DC Current Gain IC=10mA
IC=100mA
IC=500mA
IC=1A
V
CE =1V
V
CE =1V
V
CE =1V
V
CE =1V
V
CE =5V
Tamb =–55°C
IC= 100 mA
IC= 500 mA
30
60
25
20
30
15
60
90
60
60
45
35
150
fTTransition Frequency IC=50mA
f = 100 MHz VCE =10V 400 MHz
CEBO Emitter-base Capacitance IC=0
f = 1 MHz VEB = 0.5 V 40 55 pF
CCBO Collector-base Capacitance IE=0
f = 1 MHz VCB =10V 610pF
t
on** Turn-on Time IC=500mA
IB1 =50mA VCC =30V 22 35 ns
toff** Turn-off Time IC= 500 mA VCC =30V
I
B1 =– I
B2 =50mA 40 60 ns
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
THERMAL DATA
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 50
219 °C/W
°C/W
BSX32
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DC Current Gain. Collector-emitter Saturation Voltage.
Base-emitter Saturation Voltage. Collector-base Capacitance.
BSX32
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Test circuitfor ton,t
off.
PULSEGENERATOR :
tr,t
f≤1.0 ns
PW ≈1.0 µs
ZIN =50Ω
DC < 2 %
TO OSCILLOSCOPE:
tr< 1.0 ns
ZIN ≥100KΩ
BSX32
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
o
(typ.)
L
G
I
DA
F
E
B
H
TO39 MECHANICAL DATA
P008B
BSX32
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringementofpatents orother rights of third partieswhich mayresults from its use. No
license is granted by implication or otherwiseunder any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse as criticalcomponentsin lifesupportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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BSX32
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