L6201 -L6201P L6202 -L6203 ky7_ SGS;THOMSON DMOS FULL BRIDGE DRIVER SUPPLY VOLTAGE UP TO 48V 5A MAX PEAK CURRENT (2A max. for L6201) TOTALRMS CURRENT UP TO L6201: 1A; L6202: 1.5A;L6203/L6201P:4A Ros (oN) 0.3 (typical value at 25C) CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVE OPERATING FREQUENCY UP TO 100 KHz THERMAL SHUTDOWN INTERNAL LOGIC SUPPLY HIGH EFFICIENCY DESCRIPTION The I.C. is a full bridge driver for motor control ap- plications realized in Multipower-BCD technology which combines isolated DMOS power transistors with CMOS and Bipolar circuits on the same chip. By using mixed technology it has been possible to optimize the logic circuitry and the power stage to achieve the best possible performance. The DMOS output transistors can operate at supply voltages up to 42V and efficiently at high switch- BLOCK DIAGRAM MUL TIPOWER BCD TECHNOLOGY Powerdip 12+3+3 A : . aS = ha Power$020 5020 (124444) Multiwatt11 ORDERING NUMBERS: L6201 (S020) L6201P (PowerSO20) L6202 (Powerdip18) L6203 (Multiwatt) ing speeds. All the logic inputs are TTL, CMOS and wC compatible. Each channel (half-bridge) of the device is controlled by a separate logic input, while a common enable controls beth channels. The I.G. is mounted in three different packages. CBOOTi VOLTAGE F VRE FERE ENABL TN1 THERMAL SHUTDOWN OUT1 OUT2 CBO0T2 CHARGE PUMP IN2 GND MSIL E291 -Ot September 1996 1/20L6201 -L6201P - L6202 - L6203 PIN CONNECTIONS (Topview) V/ SENSE C1] 1 20 (LD Vref SENSE C3 J 70h urer ENABLE CL 2 19 [1D g00T 2 ENABLE C1 2 47 poor2 N.C. C3 18 1) IN.2 N.c. 3 16H Ino GND CI] 4 17 [1 GND GND CJ 4 15 0 GND 6ND CU 5 16 12) GND re 14 eND GND C1] 6 15 [1 GND GND CL] ? 14 [C2 SND GND C6 13 10 GND N.c.O? 42 DO 1N4 N.c. C6 13 1 IN.1 ouT.2 C3 12 [1 800T 1 out 208 4101 BoOoT1 +Us C1) 16 11 7D ouT.1 Us O39 186 2 OuUT1 MSIL E2ZE1-32 ASILEZE1- 84 $020 POWERDIP GND 1 GND N.C. 2 Nc. N.C. 3 Nc. OUT? 4 ENABLE Vs 5 SENSE OUT1 6 Vref BOOT 7 BOOT? IN 8 IN2 N.C. 3 N.C. GND 10 GND DSSINZTS PowerS0O20 11 ENABLE 16 SENSE za 3 UREF 8 BOOT? ? IN2 6 SND 5 IN4 4 BOOT1 oO 3 DUT1 2 Us 1 oUT2 [ TAB CONNECTED TO PIN 6 WS1L6202-83 MULTIWATT11 2/20 97 isounreonesL6201 -L6201P - L6202-L6203 PINS FUNCTIONS Device ; L6201 |Le201P | Lezo2 | Lezos | am Function 1 16 1 10 SENSE | A resistor Asense connected to this pin provides feedback for motor current control. 2 17 2 11 ENAB When a logic high is present on this pin the DMOS POWER LE transistors are enabled to be selectively driven by IN1 and IN2. 3 2,3,9,12, 3 N.C. Not Connected 18,19 4,5 - 4 GND Common Ground Terminal - 1,10 5 6 GND Gommon Ground Terminal 6,7 - 6 GND Common Ground Terminal 8 7 N.C. Not Connected 9 4 8 1 OUT2 Quput of 2nd Half Bridge 10 5 9 2 Vs Supply Voltage 11 6 10 3 OUT1 Output of first Half Bridge 12 ? 11 4 BOOT1 | A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. 13 8 12 5 IN4 Digital Input from the Motor Controller 14,15 - 13 GND Common Ground Terminal - 11,20 14 6 GND Common Ground Terminal 16,17 - 15 GND Common Ground Terminal 18 13 16 7 IN2 Digital Input from the Motor Controller 19 14 17 8 BOOT2 | A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. 20 15 18 9 Vret Internal voltage reference. A capacitor from this pin to GND is recommended. The internal Ref. Voltage can source out a current of 2mA max. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vs Power Supply 52 Vv Vop Differential Output Voltage (between Out1 and Out2) 60 Vv Vins Ven | Input or Enable Voltage -O3to+7 V lo Pulsed Output Current for L6201P/L6202/L6203 (Note 1) 5 A Non Repetitive (< 1 ms) for L6201 5 A for L6201 P/L6202/L6203 10 A DG Output Current for L6201 (Note 1) 1 A Vesense Sensing Voltage -1to+4 Vv Vb Boostrap Peak Voltage 60 Vv Prot Total Power Dissipation: Tpins = 90C for L6201 4 WwW for L6202 5 W Tease = 90C for L6201P/L6203 20 W Tambp = 70C for L6201 (Note 2) 0.9 W for L6202 (Note 2) 1.3 W for L6201P/L6203 (Note 2) 2.3 w Tsig, Tj | Storage and Junction Temperature 40 to +150 C Note 1: Pulse width limited only by junciion temperature and transient thermal impedance (see thermal characteristics) Note 2: Mounted on board with minimized dissipating copper area. 47 3/20 SGS-THOMSON MICROELECTRONICSL6201 -L6201P - L6202 - L6203 THERMAL DATA Symbol Parameter Value Unit L6201 L6201P L6202 L6203 Rithj-pins | Thermal Resistance Junction-pins max 15 12 Rh jcase | Thermal Resistance Junction Case max. - - - 3 CW th j-amp | Thermal Resistance Junction-ambient max. 85 13 (*) 60 35 (*) Mounted on aluminium substrate. ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj = 25C, Vs = 42V, Vseng = 0, unless otherwise specified). Symbol Parameter Test Conditions Min. Typ. Max. Unit Vs Supply Voltage 12 36 48 Vv Vrot Reference Voltage lpeF = 2mMA 13.5 Vv IREF Output Current 2 mA ls Quiescent Supply Current EN =H Vin=L 10 15 mA EN =H Vin=H I_=0 10 15 mA EN =L (Fig. 1,2,3) 8 15 mA fe Commutation Frequency (*) 30 100 KHz T Thermal Shutdown 150 C Te Dead Time Protection 100 ns TRANSISTORS OFF pss Leakage Current Fig. 11 Ve=52V | | 1 mA ON Ros On Resistance Fig. 4,5 0.3 0.55 QO V DS(ON) Drain Source Voltage Fig. 9 Ips = 1A L6201 0.3 Vv Ips = 1.2A L6202 0.36 Vv Ips = 3A L6201P/03 0.9 Vv Vsens Sensing Voltage -1 4 V SOURCE DRAIN DIODE Visa Forward ON Voltage Fig. Ga and b Isp = 1A L6201 EN=L 0.9 (**) Vv Isp = 1.2A L6202 EN=L 0.9 (**) Vv Isp = 3A L6201P/03 EN=L 1.35(**) Vv ter Reverse Recovery Time dif 300 ns a 25 As lp =1A 6201 IF = 1.2A L6202 IF = 3A L6203 tir Forward Recovery Time 200 ns LOGIC LEVELS Vinu Ven | Input Low Vollage -0.3 0.8 V Vinu, VENH Input High Voltage 2 ? V Inu lence | Input Low Current Vin, Ven = L 10 WA linus len Input High Gurrent Ving Ven =H 30 wA 4/20 fz SGS-THOMSON T/ imcnoeecTRonicsL6201 -L6201P - L6202-L6203 ELECTRICAL CHARACTERISTICS (Continued) LOGIC CONTROL TO POWER DRIVE TIMING Symbol Parameter Test Conditions Min. Typ. Max. Unit ty (Vi) Source Current Turn-off Delay Fig. 12 300 ns te (Vi) Source Current Fall Time Fig. 12 200 ns ts (Vi) Source Current Turn-on Delay Fig. 12 400 ns ta (Vi) Source Current Rise Time Fig. 12 200 ns ts (Vi) Sink Current Turn-off Delay Fig. 13 300 ns te (Vi) Sink Current Fall Time Fig. 13 200 ns t7 (Vi) Sink Current Turn-on Delay Fig. 13 400 ns te (Vi) Sink Current Rise Time Fig. 13 200 ns (*) Limited by power dissipation () In synchronous rectification the drain-source voliage drop VDS is shown in fig. 4 (L6202/03); typical value for ihe L6201 is of 0.3V. Figure 1: Typical Normalized Is vs. Tj Ki 194162813-85 1.2 Ki- 7 aTj-25C 1.1 1.8 8.9 IN. N a.5 -25 25 5B 75 Tji*c) Figure 3: Typical Normalized Is vs. Vs K3 M3ILE231-37 1,8 8.9 g.8 a.7 Is K3- Tova. 36U I) 146 26 38 48 UatU) 47 Figure 2: Typical Normalized Quiescent Current vs. Frequency M9ILE IGT - 86 K2 2.5 >. a 4.5 AM 1.61 Is K2= TeaikHz a.5 6 25 58 75 188 FtKHz) Figure 4: Typical Rps (an) vs. Vs ~ Viet MEILG2ZE 1-83 RDS ON (a) 2.6 2 SGS-THOMSON 8 18 Vs.JREFIU) 5/20 MICROELECTRONICSL6201 -L6201P - L6202 - L6203 Figure 5: Normalized Ros onat 25C vs. Temperature Typical Values NGSLE223-22 o o RDSON {Tj) 1-8)"" Rpgon (1j-25*C) 7 1.6 7 1.4 7 1.2 A Pa 4 va aT 8.8 4.6 -58 -25 8 25 SB 275 188 Tj t"C) Figure 6a: Typical Diode Behaviour in Synchro- Figure 6b: Typical Diode Behaviour in Synchro- nous Rectification (L6201) nous Rectification (L6201P/02/03) 18D M9TL 5281-89 18D Mati 6281-18 tal if) 5 5 , /; v0 Ved UDS Usd /)\ Y A A A L 1 a 4 Ba Kr A / a 8.2 8.4 8.6 8.8 1uUSDIV) H.2 8.6 1.8 1.4 Vsd.VDSiV) Figure 7a: Typical Power Dissipation vs IL Figure 7b: Typical Power Dissipation vs IL (L6201) N9126281-44 {L6201P, L6202, L6203)) Pd ae ba 941 6283-12 tw 1 oan tw) va, ag T= 2me T~2ms 18 Ty 28 1 Y, 8 A 46 , fs~ 1 BBKHZzL, fg.188KHzt/// 28KHZ| 28KHz 6 412 4 Lo LY 3 | Le a Le y , YZ) 4 I VA AAs CHOPPING ZA, PHASE CHOPPING a ENABLE CHOPPING 8 ENABLE CHOPPING) 8 4 2 1, ta) 8 1 2 3. 4 1, tal gree S57 SGS-THOMSON T/ imcnoeecTRonicsL6201 -L6201P - L6202-L6203 Figure 8a: Two Phase Chopping "I "D4 oe o IN? fT rT HoH io IN? 3N4 INi IN1H INd-L IN2L IN2H ENH 481L6203-32 ENH ABILEII- 34 Figure 8b: One Phase Chopping & TH > oy s IN2 ime Te * IN2] 1N4 INi INdH IN2=1L IN1=H ENH STL R381- 30 IN2 =H MBIL 8281-36 EN =H Figure 8: EnableChopping DH DH i ie IN? oo * IN2 Ina Ini INi=H InN1 x IN2=L IN26X ENH ASSL G283~ 17 ENL MIL G2E2- 38 7/20 haz SGS-THOMSON T/ imcnoeecTRonicsL6201 -L6201P - L6202 - L6203 TEST CIRCUITS Figure 9: Saturation Voltage a) Source outputs 43116201-79 For IN4 source output saturation: Vi-"H"* 31:8) vaeews For IN2 source output saturation: Vi+"H" B18) wae b) Sink outputs MS31L 6201-28 For IN1 sink ovtput saturation: Soars Sica } U2e*L* For IN2 sink output saturation: Ui."H* BI:8 } v2 Figure 10: Quiescent Current Is na UE a i 31 38 N an"4 D.V.T. = 1IN2 i A A us TB ee! 42 END MSILGZG1-21 Figure 11: Leakage Current a} Sourtte outputs Us Us ouT1 A D.U.T. gt nl EN ouT2 B [| = IL bi Sink autputs Us EN c | SND S941 6983-22 8/20 G57 868:THOMSON MICROELECTRONICSL6201 -L6201P - L6202-L6203 Figure 12: Source Current Delay Times vs. Input Chopper 38V for L6281 Vs. IL 4 42V for L6201P/02/03 Imax Vs Sox INi IN e IN2 OuUT1 40% D.V.T. [ouT2 . EN EN SU Ti) |T2 T3 T4 359 |] {IL Vin _L&ND 5Bx _ N91L6284-23 t Figure 13: Sink Current Delay Times vs. Input Chopper 38 for L6261 ve+ oy for L6201P/02/03 IL 4 Imax Vs Soa Ini 352 lh IN IN2 1 D.U.T OUT1 1B% . """ Taut2 t EN TS) |T6 T? Ts EN Vin _L&ND 5o% MOILGIU1~-24 t . 9/20 ky7 SES THOMSONL6201 -L6201P - L6202 - L6203 CIRCUIT DESCRIPTION The L6201/1P/2/3 is a monolithic full bridge switching motor driver realized in the new Mul tipower-BCD technology which allows the integra tion of multiple, isolated DMOS power transistors plus mixed CMOS/bipolar control circuits. In this way it has been possible to make all the control inputs TTL, CMOS and pC compatible and elimi- nate the necessity of external MOS drive compo- nents. The Logic Drive is shown in table 1. Table 1 Inputs IN IN2 Output Mosfets (*) L L Sink 1, Sink 2 _ L H Sink 1, Source 2 Ven =H H L | Source 1, Sink 2 H H Source 1, Source 2 Ven=L x x Alltransistors turned oFF L = Low H = High X = DON't care (*) Numbers referred to INPUT1 or INPUT 2 controlled ouiput stages Although the device guarantees the absence of cross-conduction, the presence of the intrinsic di- odes in the POWER DMOS structure causes the generation of current spikes on the sensing termi- nals. This is due to charge-discharge phenomena in the capacitors C1 & C2 associated with the drain source junctions (fig. 14). When the output switches from high to low, a current spike is gen- erated associated with the capacitor C1. On the low-to-high transition a spike of the same polarity is generated by C2, preceded by a spike of the opposite polarity due to the charging of the input capacity of the lower POWER DMQS transistor (fig. 15). Figure 14: Intrinsic Structures in the POWER DMOS Transistors Us o|re C1 4 Vovt a 11" } + 2 mo Cin TI q Rsense N91L 6201-25 10/20 har SGS-THOMSON Figure 15: Current Typical Spikes on the Sens- ing Pin Ip-6.5A 1-4188ns Ip Isanse 91 6201-26 TRANSISTOR OPERATION ON State When one of the POWER DMOS transistor is ON it can be considered as a resistor Ros (on throughout the recommended operating range. In this candition the dissipated power is given by : Pon = Ros on)- lbs (RMS) The low Ros (on of the Multipower-BCD process can provide high currents with low power dissipa- tion. OFF State When one of the POWER DMOS transistor is OFF the Vps veltage is equal to the supply volt- age and only the leakage current Ipss flows. The power dissipation during this period is given by : Porr = Vs- Ipss The power dissipation is very low andis negligible in comparison to that dissipated in the ON STATE. Transitions As already seen above the transistors have an in- trinsic diode between their source and drain that can operate as a fast freewheeling diode in switched mode applications. During recirculation with the ENABLE input high, the voltage drop across the transistor is Ros (on) - Ib and when it reaches the diode forward voltage it is clamped. When the ENABLE input is low, the POWER MOS is OFF and the diode carries all of the recir- culation current. The power dissipated in the tran- sitional times in the cycle depends upon the volt- age-current waveforms and In the driving mode. (see Fig. 7ab and Fig. 8abc}. Pirans. = Ips (1)- Vps (1) MICROELECTRONICSL6201 -L6201P - L6202-L6203 Boostrap Capacitors To ensure that the POWER DMOS transistors are driven correctly gate to source vollage of typ. 10 V must be guaranteed for all of the N-channel DMOS transistors. This is easy to be provided for the lower POWER DMOS transistors as their sources are refered to ground but a gate voltage greater than the supply voltage is necessary to drive the upper transistors. This is achieved by an internal charge pump circuit that guarantees cor- rect DC drive in combination with the boostrap cir- cuit. For efficient charging the value of the boos- trap capacitor should be greater than the input capacitance of the power transistor which is around 1 nF. It is recommended that a capaci- tance of at least 10 nF is used for the bootstrap. If a smaller capacitor is used there is a risk that the POWER transistors will not be fully turned on and they will show a higher RDS (ON). On the other hand if a elevated value is used it is possible that a current spike may be produced in the sense re- sistor, Reference Voltage To by-pass the internal Ref. Volt. circuit it is rec- ommended that a capacitor be placed between its pin and ground. A value of 0.22 wF should be suf- ficient for most applications. This pin is also pro- tected against a short circuit to ground: a max. current of 2mA max. can be sinked out. Dead Time To protect the device against simultaneous con- duction in beth arms of the bridge resulting in a rail to rail short circuit, the integrated logic control provides a dead time greater than 40 ns. Thermal Protection A thermal protection circuit has been included that will disable the device if the junction tempera- ture reaches 150 C. When the temperature has fallen to a safe level the device restarts the input and enable signals under control. Figure 16. APPLICATION INFORMATION Recirculation During recirculation with the ENABLE input high, the voltage drop across the transistor is RDS (ON} IL, clamped at a voltage depending on the characteristics of the source-drain diode. Al- though the device is protected against cross con- duction, current spikes can appear on the current sense pin due to charge/discharge phenomena in the intrinsic source drain capacitances. In the ap- plication this does not cause any problem be- cause the voltage spike generated on the sense resistor is masked by the current controller circuit. Rise Time Ty (See Fig. 16) When a diagonal of the bridge is turned on cur- rent begins to flow in the inductive load until the maximum current IL is reached after a time Tr. The dissipated energy Eorr/on is in this case : EorF/iOn = [RDS (on}- IL. Tr]: 2/3 Load Time Tip (See Fig. 16) During this time the energy dissipated is due to the ON resistance of the transistors (Ep) and due to commutation (Ecom). As two of the POWER DMOS transistors are ON, Eon is given by : Eip = IL Ros (ON): 2- TLD In the commutation the energy dissipated is : Ecom = Vs- IL- Tcom- fswitcH- TLb Where : Tcom = TTURN-ON = TTURN-OFF fswitcH = Chopping frequency. Fall Time T} (See Fig. 18) It is assumed that the energy dissipated in this parl of the cycle takes the same form as that shown for the rise time : Eoworr = [Ros (on): IL*- Ti]. 2/3 CHOPPING PERIOD 832 6283-37 Td &57 SS:THOMSON 11/20 MICROELECTRONICSL6201 -L6201P - L6202 - L6203 Quiescent Energy The last contribution to the energy dissipation is due to the quiescent supply current and is given by: EQuiESCENT = IquiesceNT: Vs~ T Total Energy Per Cycle Eror = Eorr/on + ELp + Ecom + + Eon/orr + EQUuiESCENT The Total Power Dissipation Ppis is simply : Pois = Etor/T Tr = Rise time Tip =Load drive time T; = Fall time Td = Dead time T = Period T=Tr+Tio+i+Ta DC Motor Speed Control Since the I.C. integrates a full H-Bridge in a single package it is idealy suited for controlling DC mo- tors. When used for DC motor control it performs the power stage required for both speed and di- rection control. The device can be combined with a current regulator like the L6506 to implement a transconductance amplifier for speed control, as shown in figure 17. In this particular configuration only half of the L6506 is used and the other halt of the device may be used to control a secand Figure 17: Bidirectional DC Motor Control motor. The L6506 senses the voltage across the sense resistor Rg to monitor the motor current: it com- pares the sensed voltage both to control the speed and during the brake of the moter. Between the sense resistor and each sense input of the L6506 a resistor is recommended; if the connections between the outputs of the L6506 and the inputs of the L6203 need a long path, a resistor must be added between each input of the L6203 and ground. A snubber network made by the series of R andC must be foreseen very near to the output pins of the I.C.; one diode (BYW98) is connected be- tween each power output pin and ground as well. The following formulas can be used to calculate the snubber values: R = Vs/Ip C = |p/(dV/dt) where: Vs is the maximum Supply Voltage foreseen on the application; Ip is the peak of the load current; dv/dt is the limited rise time of the output voltage (200V/ts is generally used). If the Power Supply Cannot Sink Current, a suit able large capacitor must be used and connected near the supply pin of the L6203. Sometimes a capacitor at pin 1/7 of the L6506 let the application better work. For motor current up to 2A max., the L6202 can be used in a similar circuit configura- tion for which a typical Supply Voltage of 24V is recommended. VoceSV Vs 36Vmax 220nF 186nF 9 2 15nF pyuse DIRECTION { dhe Di Uspeed2Umax (Ip max-=4Al IN 1 s EN 180 ENABLE DC MOTOR (ON/OFF) IN 2 2?nF = i L6263 Byuse Uce=5U , = 4-145 15nF 02 bl MSILGIET-22 12/20 {7 SGS-THOMSON 7 MCROELECTROMICSL6201 -L6201P - L6202-L6203 BIPOLAR STEPPER MOTORS APPLICATIONS Bipolar stepper motors can be driven with one L6506 or L297, two full bridge BCD drivers and very few external components. Together these three chips form a complete microprocessor-to- stepper motor interface is realized. As shown in Fig. 18 and Fig. 19, the controller connect directly to the two bridge BCD drivers. External component are minimalized: an R.C. net- work to set the chopper frequency, a resistive di- vider (R1; R2} to establish the comparator refer- ence voltage and a snubber network made by R and GC in series (See DC Motor Speed Control). Figure 18: Two Phase Bipolar Stepper Motor Gontrol Circuit with Chopper Current Control B.41uF SY eRESET ENABLE B.iuF as It il 41SnF IN 1% rm | A L6201 A ; | = L6201P it ye MOTOR IN 2 > L 6202 h me WINDING spank me L6203 _ he . 15nF me FD L6201 Hh JN 4 7 L6201P =_p, 15nF R4 MOTOR DD L6202 J q 2: DUINDING . 3 228nF = L6203 | | 'T wut | a = Ss I L_= an | 22K Ra SR Sy | osc| L6586 2 3,.3nF S=ca " _ we Ri q q SENSE RESISTORS 91 628-39 Figure 19: [wo PhaseBipolar Stepper Motor Control Circuit with Chopper Current Control and Translator 8.1uF Su &.1uF va 47 SGS-THOMSON MICROELECTRONICS cescey STEP motor HALF/FULL TRANSLATOR cp MINDING RESET CONTROL t5 DUTPUT ENABLE LOGIC MOTOR WINDING Cc SYNC 22K 3,.3nF SENSE MSIL 5201-33 RESISTORS 13/20L6201 -L6201P - L6202 - L6203 li could be requested to drive a motor at Vs lower than the minimum recommended one of 12V (See Electrical Characteristics); in this case, by accepting a possible small increas in the Ros on) resistance of the power output transistors at the lowest Supply Voltage value, may be a good solu- tion the one shownin Fig. 20. Figure 20: L6201/1P/2/3Used at a Supply Volt age Range Between 9 and 18V Vs-9 ta 18U 1580 | UREF Vs + ae Lo L Boot4 YZaiZzy . ] IN1 L6201 ouTa"T | L6201P q ! 16202 EN L6203 oUT2 | TT Boot4 GND | SENSE Rs MSILGIOI-37 THERMAL CHARACTERISTICS Thanks to the high efficiency of this device, often a true heatsink is not needed or it is simply ob- tained by means of a copper side on the P.C.B. (L6201/2). Under heavy conditions, the L6203 needs a suit- able cooling. By using two square copper sides in a similar way as it shown in Fig. 23, Fig. 21 indicates how to choose the on board heatsink area when the L6201 total power dissipation is known since: Figure 21: Typical Rth Jamb vs. "On Board Heatsink Area (L6201) Rth j-amb tcrW) val\ 6s LN MOILG 281-32 68 55 SS 58 45 612 3 4 5 6&6 2 tsq.cem Figure 22: Typical Transient RTH in Single Pulse Condition (L6201) Rth M91162812~-33 ecru) | | SINGLE PULSE aa Lo 38 | | , ImMunted on iv board with: no heat sink 18 7 9 sq.ctm copper area lian board heat sink 3 4 / -8816.81 8.1 1 18 4 5 168tpts) Figurre 23: Typical Rth J-amb vs. Two "On Board RThj-amb = (Tj max. Tamb max) / Prot Square Heatsink (L6202) Rth- jamb MOL E2B4-34 Figure 22 shows the Transient Thermal Resis- t*ceu) a | tance vs. a single pulse time width. \ COPPER AREA Gu THICKNESS Figure 23 and 24 refer to the L6202. 55 LY For the Multiwatt L6203 addition information is \ given by Figure 25 (Thermal Resistance Junction- | Ambient vs. Total Power Dissipation) and Figure s@ i I 26 (Peak Transient Thermal Resistance vs. Re- P.C. BOARD petitive Pulse Width) while Figure 27 refers to the 45 single pulse Transient Thermal Resistance. 4a Si [onc 35 38 88.5 11.5 2 2.5 3 Item) 14/20 fz SGS-THOMSON T/ icRosLecTRomicsL6201 -L6201P - L6202-L6203 Figure 24: Typical Transient Thermal Resistance for Single Pulses (L6202) Rth ABILEZH1- 3S tC/W) | SINGLE PULSE 1 | a 18 /\ LA ON BOARD HEAT-SINK AREA-68q.t0Mm ) ) | 8.1 8.661 8.81 8.1 1 18 tpis) Figure 26: Typical Transient Thermal Resistance for Single Pulses with and without Figure 28: Typical RthJ-amb of Multiwatt Package vs. Total Power Dissipation Rth j-amb (ce) M3ILG2E2 - 36 58 ~ 48 wl free air el mounted om PCB board 38 28 ~L | 18 mounted on THM7823 heat sink RtheS* C/V p-_LiJj) 11) 1 | 8 1 2 3 Ptottu) Figure 27: Typical Transient Thermal Resistance versus Pulse Width and Duty Cycle Heatsink (L6203) (L6203) Rth MOILEZH1 - 37 Rth MOL 6281-38 C/W) | | t*csW) SINGLE PULSE ft {| DC-8.5 eee ee +8 a B.A Leer free ait | 3.3 a Zz 12 Le B.2 | Pa~SW og | free air mounted an THM7&823 heat sink eee PULSE wsote RtheaS* C/y DC-DUTY CYCLE ___"__ | PULSE REPETITION PERIOD @.1 1 L 1 8,381 8.81 8.1 1 18 tpis) 4.1 1 18 168 tpims) G7 SGS-THOMSON 15/20 7 MCROELECTROMICSL6201 -L6201P - L6202 - L6203 POWERDIP18 PACKAGE MECHANICAL DATA DIM. um inch MIN. TYP. MAX. MIN. TYP. MAX. al 0.51 0.020 B 0.85 1.40 0.033 0.055 b 0.50 0.020 bi 0.38 0.50 0.015 0.020 D 24.80 0.976 E 8.80 0.346 e 2.54 0.100 e3 20.32 0.800 F 7.10 0.280 | 5.10 0.201 L 3.30 0.130 Zz 2.54 0.100 =| - 4 bt Z t ! 2 a 03 Z D Piri ri ri yi Pi Pi Ti vd B 0 |) u. 1 9 LILI LLU WLU uuu 16/20 SGS-THOMSON MICROELECTRONICS$020 PACKAGE MECHANICAL DATA DIM. A al a2 b L6201 - L6201P -L6202-L6203 20 11 LL 1 0 ? TTOOUOUOOUO 97 isounreones 17/20L6201 -L6201P - L6202 - L6203 PowerS020 PACKAGE MECHANICAL DATA mm TYP. DIM. A al a2 a3 b T 10.0 (1)*D and E1 do not include mold flash or protrusions - Mold flash or protrusions shall noi exceed 0.15mm (0.0067) Na R Ec | a2| A SSIS 1 al oll DETAILA 4g | fe DETAILB E D lead T*_, DETAILA PLO EL EL 0 \ 20 11 or \ ah, t slug a3 DETAIL B i Ue 9U | T Gage Plare S a L 2 SETING PLANE [alse {COPLANARITY) MS UUUUUUUUUU PSO20MEC hx 45 18/20 fz SGS-THOMSON 7 MCROELECTROMICSL6201 -L6201P - L6202-L6203 MULTIWATT11 PACKAGE MECHANICAL DATA mm TYP. Hi A . * 5 > C 7 SJ. - I / (1 Si f _ ; f Dia 1 _/ + |L3 4 L4 Zz L O OC a L1 | | Le | H2 B } + E CS F | mM ur Gt r POT ee ere =L6201 -L6201P - L6202 - L6203 Information furnished is believed ic be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for ihe consequences of use of such information nor for any infringement of patenis or other rights of third parties which may result irom its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject io change withoui notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as criticalcomponenisin lite support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1996 SGS-THOMSON Microelectronics Printed in lialy All Rights Reserved SGS-THOMSON Microelectronics GROUP OF GOMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - lialy - Japan - Korea - Malaysia - Malia - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 20/20 fz SGS-THOMSON 7 MCROELECTROMICS