Oct. 2002
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC...................................................................800A
●VCES ....................................................... 1700V
●Insulated Type
●2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM800DZ-34H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM
G1 G2
E1
E1 E2
E2
C1
4 - M8 NUTS
6 - M4 NUTS
C2
C2
C1
C1
E1
E1
G1
C1
C2
E2
E2
G2
C2
114
31.5
5753
4440
28
14
20
30
140
130
16 18
5
38
11.85 55.2
11.5 35 5
57±0.25 57±0.25
124
±0.25
6 - φ 7 MOUNTING HOLES
CIRCUIT DIAGRAM
LABEL
Oct. 2002
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS (Tj = 25°C)
VGE = 0V
VCE = 0V
TC = 25°C
Pulse (Note 1)
TC = 25°C
Pulse (Note 1)
TC = 25°C, IGBT part —
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
1700
±20
800
1600
800
1600
5000
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.0
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector current
Emitter current
Symbol Item Conditions UnitRatings
V
V
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 850V, IC = 800A, VGE = 15V
VCC = 850V, IC = 800A
VGE1 = VGE2 = 15V
RG = 3.3Ω
Resistive load switching operation
IE = 800A, VGE = 0V
IE = 800A
die / dt = –1600A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
IC = 80mA, VCE = 10V
IC = 800A, VGE = 15V (Note 4)
VCE = 10V
VGE = 0V
12
0.5
3.64
—
—
—
—
—
1.60
2.00
2.70
0.80
3.38
2.70
—
0.025
0.043
—
mA
µA
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
—
—
2.80
3.20
72
9.0
3.6
6.6
—
—
—
—
2.60
—
150
—
—
0.020
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.54.5 6.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Min Typ Max
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T j) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Thermal resistance
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
HVIGBT HVM-1005-A (P2-OU)
PAGE
1 / 15
SECURITY
CODE
MITSUBISHI ELECTRIC CORPORATION
Prepared by S.Iura S.Iura
Checked by M.Yamamoto I.Umesaki
Approved by M.Yamamoto M.Tabata
SPEC.NAME
Application
Note
DATE Apr.8.2002
R
E
V
A
Aug.2.2002
Data Sheet
(CM800DZ−34H)
1. Output characteristics Page 2
2. Transfer characteristics Page 3
3. Collector-emitter saturation voltage characteristics Page 4 / 5
4. Free wheel diode forward characteristics Page 6
5. Capacitance characteristics Page 7
6. Gate charge characteristics Page 8
7. Half-bridge Switching time characteristics Page 9
8. Half-bridge Switching energy characteristics Page 10
9. Reverse recovery characteristics Page 11
10. Transient thermal impedance characteristics Page 12
11. Turn-off switching safe operating area Page 13
12. Short circuit safe operating area Page 14
13. Reverse recovery safe operating area Page 15
A
HVIGBT HVM-1005-A (P2-OU)
PAGE
2 / 15
0
2000
4000
6000
8000
10000
12000
0 5 10 15 20
COLLECTOR-EMITTER VOLTAGE [V]
COLLECTOR CURRENT [A]
Output characteristics (typical)
Tj=25°C
VGE= 8V
VGE=10V
VGE=12V
VGE=14V
VGE=15V
VGE=20V
HVIGBT HVM-1005-A (P2-OU)
PAGE
3 / 15
0
2000
4000
6000
8000
10000
12000
0 5 10 15 20
GATE-EMITTER VOLTAGE [V]
COLLECTOR CURRENT [A]
Transfer characteristics (typical)
Tj=25°C
Tj=125°C
VCE=10V
HVIGBT HVM-1005-A (P2-OU)
PAGE
4 / 15
0
1
2
3
4
5
6
0 500 1000 1500 2000
COLLECTOR CURRENT [A]
COLLECTOR-EMITTER VOLTAGE [V]
Collector-emitter saturation voltage characteristics (typical)
Tj=25°C
Tj=125°C
VGE=15V
HVIGBT HVM-1005-A (P2-OU)
PAGE
5 / 15
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20
GATE-EMITTER VOLTAGE [V]
COLLECTOR-EMITTER SATURATION VOLTAGE [V]
Collector-emitter saturation voltage characteristics (typical)
Ic = 400A
Ic = 800A
Ic = 1600A
Tj=25°C
HVIGBT HVM-1005-A (P2-OU)
PAGE
6 / 15
0
1
2
3
4
5
0 500 1000 1500 2000
EMITTER CURRENT [A]
EMITTER-COLLECTOR VOLTAGE [V]
Free wheel diode forward voltage characteristics (typical)
Tj=25°C
Tj=125°C
HVIGBT HVM-1005-A (P2-OU)
PAGE
7 / 15
1
10
100
1000
0.1 1 10 100
COLLECTOR-EMITTER VOLTAGE [V]
CAPACITANCE [nF]
Capacitance characteristics (typical)
Cies
Coes
Cres
VGE=15V, Tj=25°C
Cies: f=100kHz
Coes: f=100kHz
Cres: f=1MHz
HVIGBT HVM-1005-A (P2-OU)
PAGE
8 / 15
0
2
4
6
8
10
12
14
16
18
20
0 2500 5000 7500 10000
GATE CHARGE [nC]
GATE-EMITTER VOLTAGE [V]
Gate charge characteristics (typical)
VCC=850V
IC=800A
HVIGBT HVM-1005-A (P2-OU)
PAGE
9 / 15
0.01
0.1
1
10
10 100 1000 10000
COLLECTOR CURRENT [A]
SWITCHING TIME [µs]
Half-bridge switching time characteristics (typical)
td(off)
td(on)
tf
tr
VCC=850V, VGE=±15V
RG=3.3Ω, Tj=125°C, LS=150nH
Inductive load
HVIGBT HVM-1005-A (P2-OU)
PAGE
10 / 15
0
0.2
0.4
0.6
0.8
1
1.2
0 400 800 1200 1600
COLLECTOR / EMITTER CURRENT [A]
SWITCHING ENERGY [J/P]
Half-bridge switching energy characteristics (typical)
VCC=850V, VGE=±15V
RG=3.3Ω, Tj=125°C, LS=150nH
Inductive load
Integrated over range of 10%
Eon
Eoff
Erec
HVIGBT HVM-1005-A (P2-OU)
PAGE
11 / 15
0.1
1
10
100
10 100 1000 10000
EMITTER CURRENT [A]
REVERSE RECOVERY TIME [µs]
10
100
1000
10000
REVERSE RECOVERY CURRENT [A]
Reverse recovery characteristics (typical)
VCC=850V, Tj=125°C
LS=150nH, Inductive load
IGBT drive conditions
VGE=±15V, RG=3.3Ω
trr
Irr
HVIGBT HVM-1005-A (P2-OU)
PAGE
12 / 15
0.001 0.010 0.100 1.000 10.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
TIME [second]
Transient thermal impedance characteristics
Single pulse
Tc = 25°C
IGBT part.: Rth(j-c)=0.020 K/W
FWDi part: Rth(
j
-c)=0.034 K/W
HVIGBT HVM-1005-A (P2-OU)
PAGE
13 / 15
0
500
1000
1500
2000
2500
3000
0 500 1000 1500 2000
COLLECTOR-EMITTER VOLTAGE [V]
COLLECTOR CURRENT [A]
Turn-off switching safe operating area (SWSOA / RBSOA)
VCC≤1150V, VGE=±15V
RG≥3.3Ω, Tj=125°C
HVIGBT HVM-1005-A (P2-OU)
PAGE
14 / 15
0
1000
2000
3000
4000
5000
6000
0 500 1000 1500 2000
COLLECTOR-EMITTER VOLTAGE [V]
COLLECTOR CURRENT [A]
Short circuit safe operating area (SCSOA)
VCC≤1150V, VGE=±15V
RG≥3.3Ω, Tj=125°C
tw≤10µs
HVIGBT HVM-1005-A (P2-OU)
PAGE
15 / 15
0
500
1000
1500
2000
2500
0 500 1000 1500 2000
EMITTER-COLLECTOR VOLTAGE [V]
REVERSE RECOVERY CURRENT [A]
Reverse recovery safe operating area (RRSOA / Di-SOA)
VCC≤1150V, Tj=125°C
di/dt≤1800A/µs
