BY251...BY255 PLASTIC SILICON RECTIFIERS FEATURES ae * Low forward voltage | ods * High current capability 52 MIN * Low leakage current an * High surge capability 9.5 * Low cost 26.5 Cathode MIN 1.2+0.05 Absolute Maximum Ratings (T,= 25 C) VOLTAGE RANCE 200 to 1300 Voits CURRENT 3.0 Amperes Dimensions in mm Symbol Value Unit Repetitive Peak Reverse Voltage BY251 Verm 200 V BY252 Vaan 400 V BY253 Vaan 600 Vv BY254 Verm 800 Vv BY255 Venn 1300 Vv Nminai Current at Haife Wave Rectificatin leay 3 A with Resistive Lad at T,_, = 25 C Repetitive Peak Forward Current, < 40 , f >15Hz, Tamp = 20 C lean 20) A Surge Forward Current, Half Cycle 50Hz, starting from T,= 25C lise 100 A Junction Temperature T, 150 C Ambient Operating Temperature Range amb -40 + 150 C Strage Temperature Range T, -40 + 150 C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) BY251...BY255 PLASTIC SILICON RECTIFIERS Characteristics at T,_, =25 C Symbol Min. Typ. Max. Unit Forward Voltage Vv, - - 1.0 V atl.=3A Leakage Current I, - - 20 HA at Vie Thermal Resistance Rua - - 30) K/W Junction to Ambient Air "Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. Forward characteristic BY 251...255 Admissible rectified current versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. BY 251...255 Trav Tame) Tray(50C) 100 > Tame 200 C ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) SEMTECH ELECTRONICS LTD. He