3KASMC10 thru 3KASMC43A
www.vishay.com Vishay General Semiconductor
Revision: 13-Dec-13 1Document Number: 88480
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
•Junction passivation optimized design
passivated anisotropic rectifier technology
•T
J = 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 3000 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMCJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
VWM 10 V to 43 V
VBR 11.1 V to 52.8 V
PPPM 3000 W
PD6.0 W
IFSM 200 A
TJ max. 185 °C
Polarity Uni-directional
Package DO-214AB (SMCJ)
DO-214AB (SMCJ)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3) PPPM 3000 W
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1) IPPM See next table A
Peak forward surge current 8.3 ms single half sine-wave (2) IFSM 200 A
Power dissipation on infinite heatsink, TL = 75 °C (fig. 6) PD6.0 W
Maximum instantaneous forward voltage at 100 A (2) VF3.5 V
Operating junction and storage temperature range TJ, TSTG -65 to +185 °C
3KASMC10 thru 3KASMC43A
www.vishay.com Vishay General Semiconductor
Revision: 13-Dec-13 2Document Number: 88480
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR (μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
TJ = 150 °C
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
MIN. MAX.
3KASMC10 3AW 11.1 13.6 1.0 10 5.0 50 160 18.8
3KASMC10A 3AX 11.1 12.3 1.0 10 5.0 50 177 17.0
3KASMC11 3AY 12.2 14.9 1.0 11 5.0 50 149 20.1
3KASMC11A 3AZ 12.2 13.5 1.0 11 5.0 50 165 18.2
3KASMC12 3BD 13.3 16.3 1.0 12 2.0 20 136 22.0
3KASMC12A 3BE 13.3 14.7 1.0 12 2.0 20 151 19.9
3KASMC13 3BF 14.4 17.6 1.0 13 2.0 20 126 23.8
3KASMC13A 3BG 14.4 15.9 1.0 13 2.0 20 140 21.5
3KASMC14 3BH 15.6 19.1 1.0 14 1.0 10 116 25.8
3KASMC14A 3BK 15.6 17.2 1.0 14 1.0 10 129 23.2
3KASMC15 3BL 16.7 20.4 1.0 15 1.0 10 112 26.9
3KASMC15A 3BM 16.7 18.5 1.0 15 1.0 10 123 24.4
3KASMC16 3BN 17.8 21.8 1.0 16 1.0 10 104 28.8
3KASMC16A 3BP 17.8 19.7 1.0 16 1.0 10 115 26.0
3KASMC17 3BQ 18.9 23.1 1.0 17 1.0 10 98.4 30.5
3KASMC17A 3BR 18.9 20.9 1.0 17 1.0 10 109 27.6
3KASMC18 3BS 20.0 24.4 1.0 18 1.0 10 93.2 32.2
3KASMC18A 3BT 20.0 22.1 1.0 18 1.0 10 103 29.2
3KASMC20 3BU 22.2 27.1 1.0 20 1.0 10 83.8 35.8
3KASMC20A 3BV 22.2 24.5 1.0 20 1.0 10 92.6 32.4
3KASMC22 3BW 24.4 29.8 1.0 22 1.0 10 76.1 39.4
3KASMC22A 3BX 24.4 26.9 1.0 22 1.0 10 84.5 35.5
3KASMC24 3BY 26.7 32.6 1.0 24 1.0 10 69.8 43.0
3KASMC24A 3BZ 26.7 29.5 1.0 24 1.0 10 77.1 38.9
3KASMC26 3CD 28.9 35.3 1.0 26 1.0 10 64.4 46.6
3KASMC26A 3CE 28.9 31.9 1.0 26 1.0 10 71.3 42.1
3KASMC28 3CF 31.1 38.0 1.0 28 1.0 10 60.0 50.0
3KASMC28A 3CG 31.1 34.4 1.0 28 1.0 10 66.1 45.4
3KASMC30 3CH 33.3 40.7 1.0 30 1.0 15 56.1 53.5
3KASMC30A 3CK 33.3 36.8 1.0 30 1.0 15 62.0 48.4
3KASMC33 3CL 36.7 44.9 1.0 33 1.0 15 50.8 59.0
3KASMC33A 3CM 36.7 40.6 1.0 33 1.0 15 56.3 53.3
3KASMC36 3CN 40.0 48.9 1.0 36 1.0 20 46.7 64.3
3KASMC36A 3CP 40.0 44.2 1.0 36 1.0 20 51.6 58.1
3KASMC40 3CQ 44.4 54.3 1.0 40 1.0 20 42.0 71.4
3KASMC40A 3CR 44.4 49.1 1.0 40 1.0 20 46.5 64.5
3KASMC43 3CS 47.8 58.4 1.0 43 1.0 20 39.1 76.7
3KASMC43A 3CT 47.8 52.8 1.0 43 1.0 20 43.2 69.4
3KASMC10 thru 3KASMC43A
www.vishay.com Vishay General Semiconductor
Revision: 13-Dec-13 3Document Number: 88480
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Mounted on minimum recommended pad layout
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient air (1) RJA 77.5 °C/ W
Typical thermal resistance, junction to leads RJL 18.3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
3KASMC10AHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel
3KASMC10AHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel
3KASMC10AHE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel
3KASMC10AHE3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel
0.1
1
10
100
0.1 1 10 100 1000 10 000
P
PPM
- Peak Power (kW)
t
d
- Pulse Width (µs)
0
25
50
75
100
050 100 150 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0
50
100
150
t
r
= 10 µs
Peak Value
IPPM
Half Value -
IPPM
I
PP
2
t
d
10/1000 µs Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
100
1000
10 000
10 20 30 40 50
C
J
- Junction Capacitance (pF)
VWM - Reverse Stand-off Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
Measured at
Stand-Off Voltage
3KASMC10 thru 3KASMC43A
www.vishay.com Vishay General Semiconductor
Revision: 13-Dec-13 4Document Number: 88480
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current Fig. 6 - Power Derating Curve
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
200
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
10
50
50 10 1 100 5
TJ = TJ max.
8.3 ms Single Half Sine-Wave
P
D
- Power Dissipation (W)
T
L
- Lead Temperature (°C)
6
5
4
3
2
1
0
025 50 75 100 125 150 175 200
60 Hz
Resistive or
Inductive Load
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMCJ)
0.320 REF.
Mounting Pad Layout
0 (0)
0.185 (4.69)
MAX.
0.126 (3.20)
MIN.
0.060 (1.52)
MIN.
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Revision: 02-Oct-12 1Document Number: 91000
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