LESHAN RADIO COMPANY, LTD.
M2–1/2
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 45 V
Collector–Base V oltage V CBO 50 V
Emitter–Base V oltage V EBO 5.0 V
Collector Current — Continuous I C500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D
TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D
Alumina Substrate, (2) TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA) V (BR)CEO 45 — — V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA) V (BR)CES 50 — — V
Emitter–Base Breakdown Voltage
(I E = –1.0 µA) V (BR)EBO 5.0 — — V
Collector Cutoff Current I CBO
(VCB = 20 V) — — 100 nA
(VCB = 20 V, TA = 150°C) — — 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC817-16LT1
BC817-25LT1
BC817-40LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)