S29JL032H 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory S29JL032H Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information, Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions. Publication Number S29JL032H_00 Revision B Amendment 8 Issue Date August 31, 2009 D at a S hee t Notice On Data Sheet Designations Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions. Advance Information The Advance Information designation indicates that Spansion Inc. is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion Inc. therefore places the following conditions upon Advance Information content: "This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice." Preliminary The Preliminary designation indicates that the product development has progressed such that a commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the manufacturing process that occur before full production is achieved. Changes to the technical specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content: "This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications." Combination Some data sheets contain a combination of products with different designations (Advance Information, Preliminary, or Full Production). This type of document distinguishes these products and their designations wherever necessary, typically on the first page, the ordering information page, and pages with the DC Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first page refers the reader to the notice on this page. Full Production (No Designation on Document) When a product has been in production for a period of time such that no changes or only nominal changes are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include those affecting the number of ordering part numbers available, such as the addition or deletion of a speed option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following conditions to documents in this category: "This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur." Questions regarding these document designations may be directed to your local sales office. 2 S29JL032H S29JL032H_00_B8 August 31, 2009 S29JL032H 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Data Sheet Distinctive Characteristics Architectural Advantages - 10 mA active read current at 5 MHz - 200 nA in standby or automatic sleep mode Simultaneous Read/Write Operations - Data can be continuously read from one bank while executing erase/program functions in another bank. - Zero latency between read and write operations Cycling Endurance: 1 million cycles per sector typical Data Retention: 20 years typical Software Features Multiple Bank Architecture - Four bank architectures available (refer to Table 8.2 on page 16). Boot Sectors Supports Common Flash Memory Interface (CFI) Erase Suspend/Erase Resume - Top and bottom boot sectors in the same device - Any combination of sectors can be erased - Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation. Manufactured on 0.13 m Process Technology Data# Polling and Toggle Bits Secured Silicon Sector: Extra 256 Byte sector - Customer lockable: One-time programmable only. Once locked, data cannot be changed Zero Power Operation - Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. - Provides a software method of detecting the status of program or erase cycles Unlock Bypass Program Command - Reduces overall programming time when issuing multiple program command sequences Hardware Features Compatible with JEDEC standards - Pinout and software compatible with single-power-supply flash standard Ready/Busy# Output (RY/BY#) - Hardware method for detecting program or erase cycle completion Hardware Reset Pin (RESET#) Package options - Hardware method of resetting the internal state machine to the read mode 48-pin TSOP WP#/ACC Input Pin Performance Characteristics High Performance - Access time as fast as 60 ns - Program time: 4 s/word typical using accelerated programming function Ultra Low Power Consumption (typical values) - 2 mA active read current at 1 MHz - Write protect (WP#) function protects the two outermost boot sectors regardless of sector protect status - Acceleration (ACC) function accelerates program timing Sector Protection - Hardware method to prevent any program or erase operation within a sector - Temporary Sector Unprotect allows changing data in protected sectors in-system General Description The S29JL032H is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15-DQ0; byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 60, 70, or 90 ns and is offered in a 48-pin TSOP package. Standard control pins--chip enable (CE#), write enable (WE#), and output enable (OE#)--control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Publication Number S29JL032H_00 Revision B Amendment 8 Issue Date August 31, 2009 D at a S hee t Table of Contents Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4 1. Simultaneous Read/Write Operations with Zero Latency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1.1 S29JL032H Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2. Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1 4 Bank Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.2 2 Bank Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4. Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5. Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6. Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8. Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.1 Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.2 Requirements for Reading Array Data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3 Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.4 Simultaneous Read/Write Operations with Zero Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5 Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.6 Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7 RESET#: Hardware Reset Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8 Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.9 Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.10 Sector/Sector Block Protection and Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.11 Write Protect (WP#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.12 Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.13 Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.14 Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9. Common Flash Memory Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 10. Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.1 Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.2 Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3 Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.4 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence . . . . . . . . . 10.5 Byte/Word Program Command Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.6 Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.7 Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.8 Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 31 31 32 32 32 34 34 36 11. Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.2 RY/BY#: Ready/Busy#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.5 Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6 DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.7 DQ3: Sector Erase Timer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 38 39 39 41 41 41 42 12. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 13 13 14 14 15 15 15 15 16 21 22 24 24 26 27 13. Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 14. DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 14.1 CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 14.2 Zero-Power Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 15. Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et 16. Key To Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 17. AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.1 Read-Only Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.2 Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.3 Word/Byte Configuration (BYTE#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4 Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5 Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.6 Alternate CE# Controlled Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . 18. Erase and Programming Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 19. TSOP Pin Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 20. Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 20.1 TS 048--48-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 21. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.1 Revision A0 (May 21, 2004). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.2 Revision A1 (August 5, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.3 Revision A2 (March 10, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.4 Revision B0 (September 21, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.5 Revision B1 (November 28, 2005). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.6 Revision B2 (March 13, 2006) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.7 Revision B3 (May 19, 2006). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.8 Revision B4 (June 7, 2007) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.9 Revision B5 (August 10, 2007) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.10 Revision B6 (March 7, 2008) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.11 Revision B7 (July 7, 2008) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.12 Revision B8 (August 31, 2009) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . August 31, 2009 S29JL032H_00_B8 S29JL032H 47 47 48 49 50 54 55 59 59 59 59 59 59 59 60 60 60 60 60 60 5 D at a S hee t Figures Figure 8.1 Figure 8.2 Figure 8.3 Figure 10.1 Figure 10.2 Figure 11.1 Figure 11.2 Figure 12.1 Figure 12.2 Figure 14.1 Figure 14.2 Figure 15.1 Figure 16.1 Figure 17.1 Figure 17.2 Figure 17.3 Figure 17.4 Figure 17.5 Figure 17.6 Figure 17.7 Figure 17.8 Figure 17.9 Figure 17.10 Figure 17.11 Figure 17.12 Figure 17.13 Figure 17.14 6 Temporary Sector Unprotect Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . In-System Sector Protect/Unprotect Algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Secured Silicon Sector Protect Verify . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data# Polling Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Toggle Bit Algorithm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) . . . . . . . . . . . . . . . . Typical ICC1 vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BYTE# Timings for Read Operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BYTE# Timings for Write Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Program Operation Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Accelerated Program Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Back-to-back Read/Write Cycle Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data# Polling Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Toggle Bit Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temporary Sector Unprotect Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sector/Sector Block Protect and Unprotect Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . Alternate CE# Controlled Write (Erase/Program) Operation Timings . . . . . . . . . . . . . . . . . . S29JL032H 24 25 27 33 35 39 40 43 43 45 45 46 46 47 48 49 49 51 51 52 52 53 53 54 54 55 56 S29JL032H_00_B8 August 31, 2009 Data She et Tables Table 8.1 Table 8.2 Table 8.3 Table 8.4 Table 8.5 Table 8.6 Table 8.7 Table 8.8 Table 9.1 Table 9.2 Table 9.3 Table 9.4 Table 10.1 Table 11.1 Table 15.1 S29JL032H Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29JL032H Bank Architecture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29JL032H Sector Addresses - Top Boot Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29JL032H Sector Addresses - Bottom Boot Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29JL032H Autoselect Codes (High Voltage Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29JL032H Boot Sector/Sector Block Addresses for Protection/Unprotection (Top Boot Devices) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29JL032H Sector/Sector Block Addresses for Protection/Unprotection (Bottom Boot Devices) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WP#/ACC Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CFI Query Identification String. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S29JL032H Command Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write Operation Status. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Test Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . August 31, 2009 S29JL032H_00_B8 S29JL032H 13 16 17 19 21 22 23 24 28 28 29 30 37 42 46 7 D at a 1. S hee t Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into separate banks (see Table 8.2 on page 16). Sector addresses are fixed, system software can be used to form user-defined bank groups. During an Erase/Program operation, any of the non-busy banks may be read from. Note that only two banks can operate simultaneously. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. The S29JL032H can be organized as both a top and bottom boot sector configuration. 1.1 S29JL032H Features The Secured Silicon Sector is an extra 256 byte sector capable of being permanently locked by the customer. The Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been locked and is 0 if lockable. Customers may utilize the Secured Silicon Sector as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This is an advantage compared to systems where user-written software must keep track of the old data location, status, logical to physical translation of the data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash memory by calling one of only six functions. The device offers complete compatibility with the JEDEC 42.4 single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to the read mode. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both modes. 2. Product Selector Guide Part Number Speed Option Standard Voltage Range: VCC = 3.0-3.6 V S29JL032H 60 Standard Voltage Range: VCC = 2.7-3.6 V 8 70 90 Max Access Time (ns), tACC 60 70 90 CE# Access (ns), tCE 60 70 90 OE# Access (ns), tOE 25 30 35 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et 3. Block Diagram 4 Bank Device VCC VSS OE# Mux BYTE# Bank 1 Bank 2 Address Bank 2 X-Decoder A20-A0 RESET# WE# CE# BYTE# WP#/ACC STATE CONTROL & COMMAND REGISTER Status DQ15-DQ0 Control Mux DQ15-DQ0 DQ0-DQ15 Bank 3 Bank 3 Address X-Decoder A20-A0 Bank 4 Address Y-gate A20-A0 X-Decoder DQ15-DQ0 RY/BY# DQ15-DQ0 A20-A0 X-Decoder DQ15-DQ0 Bank 1 Address A20-A0 Y-gate 3.1 Bank 4 Mux August 31, 2009 S29JL032H_00_B8 S29JL032H 9 D at a 2 Bank Device OE# BYTE# A20-A0 RY/BY# X-Decoder A20-A0 RESET# WE# CE# BYTE# Upper Bank DQ15-DQ0 Upper Bank Address A20-A0 Y-Decoder VCC VSS Latches and Control Logic 3.2 S hee t STATE CONTROL & COMMAND REGISTER Status DQ15-DQ0 Control WP#/ACC Y-Decoder Lower Bank Address Latches and Control Logic X-Decoder A20-A0 A20-A0 DQ15-DQ0 DQ15-DQ0 Lower Bank OE# BYTE# 4. Connection Diagrams A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# NC WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-Pin Standard TSOP S29JL032H 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 S29JL032H_00_B8 August 31, 2009 Data She et 5. Pin Description A20-A0 21 Addresses DQ14-DQ0 15 Data Inputs/Outputs (x16-only devices) DQ15/A-1 DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# Chip Enable OE# Output Enable WE# Write Enable WP#/ACC Hardware Write Protect/Acceleration Pin RESET# Hardware Reset Pin, Active Low BYTE# Selects 8-bit or 16-bit mode RY/BY# Ready/Busy Output VCC 3.0 volt-only single power supply (see Product Selector Guide on page 8 for speed options and voltage supply tolerances) VSS Device Ground NC Pin Not Connected Internally 6. Logic Symbol 21 A20-A0 16 or 8 DQ15-DQ0 (A-1) CE# OE# WE# WP#/ACC RESET# RY/BY# BYTE# August 31, 2009 S29JL032H_00_B8 S29JL032H 11 D at a 7. S hee t Ordering Information The order number (Valid Combination) is formed by the following: S29JL032H 60 T A I 00 0 Packing Type 0 = Tray 3 = 13-inch Tape and Reel Model Number 01 = Top Boot Device, 4 Banks: 4/12/12/4 Mb 02 = Bottom Boot Device, 4 Banks: 4/12/12/4 Mb 21 = Top Boot Device, 2 Banks: 4/28 Mb 22 = Bottom Boot Device, 2 Banks: 4/28 Mb 31 = Top Boot Device, 2 Banks: 8/24 Mb 32 = Bottom Boot Device, 2 Banks: 8/24 Mb 41 = Top Boot Device, 2 Banks: 16/16 Mb 42 = Bottom Boot Device, 2 Banks: 16/16 Mb Temperature Range I = Industrial (-40C to +85C) Package Material Set A = Standard F = Pb-free Package Type T = Thin Small Outline Package (TSOP) Standard Pinout Speed Option 60 = 60 ns 70 = 70 ns 90 = 90 ns Device Family S29JL032H 3.0 Volt-only, 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) Simultaneous Read/Write Flash Memory Manufactured on 130 nm process technology S29JL032H Valid Combinations Device Family Speed Option Package, Material, Set and Temperature Range Model Number Packing Type Package Type 01 02 21 60 S29JL032H 70 TAI 22 90 TFI 31 (Note 2) 0 3 TS048 TSOP (Note 1) 32 41 42 Note 1. Type 0 is standard. Specify others as required; TSOPs can be packed in Types 0 and 3. 2. Operating voltage VCC varies depending on speed option. Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local Spansion sales office to confirm availability of specific valid combinations and to check on newly released combinations. 12 S29JL032H S29JL032H_00_B8 August 31, 2009 Data 8. She et Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 8.1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 8.1 S29JL032H Device Bus Operations Operation WE# RESET# WP#/ACC Addresses (Note 1) DQ15-DQ8 CE# OE# BYTE# = VIH BYTE# = VIL DQ7-DQ0 Read L L H H L/H AIN DOUT DOUT Write L H L H (Note 3) AIN DIN DQ14-DQ8 = High-Z, DQ15 = A-1 L/H X High-Z High-Z High-Z DIN VCC 0.3 V X X VCC 0.3 V Output Disable L H H H L/H X High-Z High-Z High-Z Reset X X X L L/H X High-Z High-Z High-Z L H L VID L/H SA, A6 = L, A1 = H, A0 = L X X DIN Sector Unprotect (Note 2) L H L VID (Note 3) SA, A6 = H, A1 = H, A0 = L X X DIN Temporary Sector Unprotect X X X VID (Note 3) AIN DIN High-Z DIN Standby Sector Protect (Note 2) Legend L = Logic Low = VIL H = Logic High = VIH VID = 8.5-12.5 V VHH = 9.0 0.5 V X = Don't Care SA = Sector Address AIN = Address In DIN = Data In DOUT = Data Out Notes 1. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector/Sector Block Protection and Unprotection on page 22. 3. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, protection on the two outermost boot sectors depends on whether they were last protected or unprotected using the method described in Sector/Sector Block Protection and Unprotection on page 22. If WP#/ACC = VHH, all sectors will be unprotected. 8.1 Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic `1', the device is in word configuration, DQ15-DQ0 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic `0', the device is in byte configuration, and only data I/O pins DQ7-DQ0 are active and controlled by CE# and OE#. The data I/O pins DQ14-DQ8 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. August 31, 2009 S29JL032H_00_B8 S29JL032H 13 D at a 8.2 S hee t Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. Refer to the Read-Only Operations on page 47 for timing specifications and to Figure 17.1 on page 47 for the timing diagram. ICC1 in DC Characteristics on page 44 represents the active current specification for reading array data. 8.3 Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to Word/Byte Configuration on page 13 for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. Byte/ Word Program Command Sequence on page 32 has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 8.3 on page 17 and Table 8.4 on page 19 indicate the address space that each sector occupies. Similarly, a "sector address" is the address bits required to uniquely select a sector. Command Definitions on page 31 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. The device address space is divided into four banks. A "bank address" is the address bits required to uniquely select a bank. ICC2 in the DC Characteristics table represents the active current specification for the write mode. AC Characteristics on page 47 contains timing specification tables and timing diagrams for write operations. 8.3.1 Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. See Write Protect (WP#) on page 24 for related information. 8.3.2 Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15-DQ0. Standard read cycle timings apply in this mode. Refer to Autoselect Mode on page 21 and Autoselect Command Sequence on page 32 for more information. 14 S29JL032H S29JL032H_00_B8 August 31, 2009 Data 8.4 She et Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Figure 17.8 on page 52 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in DC Characteristics on page 44 represent the current specifications for read-while-program and read-while-erase, respectively. 8.5 Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in DC Characteristics on page 44 represents the standby current specification. 8.6 Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC5 in DC Characteristics on page 44 represents the automatic sleep mode current specification. 8.7 RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is "1"), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to AC Characteristics on page 47 for RESET# parameters and to Figure 17.2 on page 48 for the timing diagram. August 31, 2009 S29JL032H_00_B8 S29JL032H 15 D at a 8.8 S hee t Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Table 8.2 S29JL032H Bank Architecture Device Model Number 01, 02 16 Bank 1 Bank 2 Bank 3 Bank 4 Megabit Sector Size Megabit Sector Size Megabit Sector Size Megabit Sector Size 4 Mbit Eight 8 Kbyte/ 4 Kword, seven 64 Kbyte/ 32 Kword 12 Mbit Twenty-four 64 Kbyte/ 32 Kword 12 Mbit Twenty-four 64 Kbyte/ 32 Kword 4 Mbit Eight 64 Kbyte/ 32 Kword Bank 1 Bank 2 Device Model Number Megabits Sector Size Megabit 21, 22 4 Mbit Eight 8 Kbyte/4 Kword, seven 64 Kbyte/32 Kword 28 Mbit 31, 32 8 Mbit Eight 8 Kbyte/4 Kword, fifteen 64 Kbyte/32 Kword 24 Mbit Forty-eight 64 Kbyte/32 Kword 41, 42 16 Mbit Eight 8 Kbyte/4 Kword, thirty-one 64 Kbyte/32 Kword 16 Mbit Thirty-two 64 Kbyte/32 Kword S29JL032H Sector Size Fifty-six 64 Kbyte/32 Kword S29JL032H_00_B8 August 31, 2009 Data She et S29JL032H (Model 01) S29JL032H (Model 21) Bank 2 Bank 3 Bank 2 Bank 2 Bank 4 S29JL032H (Model 31) S29JL032H (Model 41) Table 8.3 S29JL032H Sector Addresses - Top Boot Devices (Sheet 1 of 2) August 31, 2009 S29JL032H_00_B8 Sector Sector Address A20-A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA0 000000xxx 64/32 000000h-00FFFFh 000000h-07FFFh 008000h-0FFFFh SA1 000001xxx 64/32 010000h-01FFFFh SA2 000010xxx 64/32 020000h-02FFFFh 010000h-17FFFh SA3 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh SA4 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh SA5 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh SA6 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh SA7 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh SA8 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh 048000h-04FFFFh SA9 001001xxx 64/32 090000h-09FFFFh SA10 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh SA11 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh SA12 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh SA13 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh SA14 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh SA15 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh SA16 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh SA17 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh SA18 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh SA19 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh SA20 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh SA21 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh SA22 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh SA23 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh SA24 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh SA25 011001xxx 64/32 190000h-19FFFFh SA26 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh SA27 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh SA28 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh SA29 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh SA30 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh SA31 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh S29JL032H 17 D at a S hee t S29JL032H (Model 01) S29JL032H (Model 21) S29JL032H (Model 31) 18 Bank 2 Bank 1 Bank 1 Bank 1 Bank 1 Bank 2 (cont'd) Bank 2 (cont'd) S29JL032H (Model 41) Table 8.3 S29JL032H Sector Addresses - Top Boot Devices (Sheet 2 of 2) Sector Sector Address A20-A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA32 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh SA33 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh SA34 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh SA35 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh SA36 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh SA37 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh SA38 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh SA39 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh SA40 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh SA41 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh SA42 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh SA43 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh SA44 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh SA45 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh SA46 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh SA47 101111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh SA48 110000xxx 64/32 300000h-30FFFFh 180000h-187FFFh SA49 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh SA50 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh SA51 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh SA52 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh SA53 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh SA54 110110xxx 64/32 360000h-36FFFFh 1B0000h-1BFFFFh SA55 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh SA56 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh SA57 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh SA58 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1DFFFFh SA59 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh SA60 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh SA61 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh SA62 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh SA63 111111000 8/4 3F0000h-3F1FFFh 1F8000h-1F8FFFh SA64 111111001 8/4 3F2000h-3F3FFFh 1F9000h-1F9FFFh SA65 111111010 8/4 3F4000h-3F5FFFh 1FA000h-1FAFFFh SA66 111111011 8/4 3F6000h-3F7FFFh 1FB000h-1FBFFFh SA67 111111100 8/4 3F8000h-3F9FFFh 1FC000h-1FCFFFh SA68 111111101 8/4 3FA000h-3FBFFFh 1FD000h-1FDFFFh SA69 111111110 8/4 3FC000h-3FDFFFh 1FE000h-1FEFFFh SA70 111111111 8/4 3FE000h-3FFFFFh 1FF000h-1FFFFFh S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et S29JL032H (Model 02) Bank 1 S29JL032H (Model 22) Bank 2 Bank 2 Bank 2 Bank 1 Bank 1 Bank 1 S29JL032H (Model 32) S29JL032H (Model 42) Table 8.4 S29JL032H Sector Addresses - Bottom Boot Devices (Sheet 1 of 2) August 31, 2009 S29JL032H_00_B8 Sector Sector Address A20-A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA0 000000000 8/4 000000h-001FFFh 000000h-000FFFh SA1 000000001 8/4 002000h-003FFFh 001000h-001FFFh SA2 000000010 8/4 004000h-005FFFh 002000h-002FFFh SA3 000000011 8/4 006000h-007FFFh 003000h-003FFFh SA4 000000100 8/4 008000h-009FFFh 004000h-004FFFh SA5 000000101 8/4 00A000h-00BFFFh 005000h-005FFFh SA6 000000110 8/4 00C000h-00DFFFh 006000h-006FFFh SA7 000000111 8/4 00E000h-00FFFFh 007000h-007FFFh SA8 000001xxx 64/32 010000h-01FFFFh 008000h-00FFFFh SA9 000010xxx 64/32 020000h-02FFFFh 010000h-017FFFh SA10 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh SA11 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh SA12 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh SA13 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh SA14 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh SA15 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh SA16 001001xxx 64/32 090000h-09FFFFh 048000h-04FFFFh SA17 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh SA18 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh SA19 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh SA20 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh SA21 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh SA22 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh SA23 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh SA24 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh SA25 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh SA26 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh SA27 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh SA28 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh SA29 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh SA30 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh SA31 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh SA32 011001xxx 64/32 190000h-19FFFFh 0C8000h-0CFFFFh SA33 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh SA34 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh SA35 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh SA36 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh SA37 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh SA38 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh S29JL032H 19 D at a S hee t S29JL032H (Model 02) Bank 4 Bank 2 (cont'd) Bank 2 (cont'd) Bank 2 Bank 3 S29JL032H (Model 22) S29JL032H (Model 32) S29JL032H (Model 42) Table 8.4 S29JL032H Sector Addresses - Bottom Boot Devices (Sheet 2 of 2) 20 Sector Sector Address A20-A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA39 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh SA40 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh SA41 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh SA42 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh SA43 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh SA44 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh SA45 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh SA46 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh SA47 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh SA48 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh SA49 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh SA50 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh SA51 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh SA52 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh SA53 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh SA54 110111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh SA55 111000xxx 64/32 300000h-30FFFFh 180000h-187FFFh SA56 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh SA57 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh SA58 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh SA59 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh SA60 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh SA61 110110xxx 64/32 360000h-36FFFFh 1B0000h-1B7FFFh SA62 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh SA63 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh SA64 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh SA65 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh SA66 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh SA67 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh SA68 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh SA69 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh SA70 111111xxx 64/32 3F0000h-3F1FFFh 1F8000h-1FFFFFh S29JL032H S29JL032H_00_B8 August 31, 2009 Data 8.9 She et Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7-DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins must be as shown in Table 8.5. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. Table 8.5 shows the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. However, the autoselect codes can also be accessed in-system through the command register, for instances when the S29JL032H is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 10.1 on page 37. Note that if a Bank Address (BA) on address bits A20, A19 and A18 is asserted during the third write cycle of the autoselect command, the host system can read autoselect data from that bank and then immediately read array data from another bank, without exiting the autoselect mode. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 10.1 on page 37. This method does not require VID. Refer to Autoselect Command Sequence on page 32 for more information. Table 8.5 S29JL032H Autoselect Codes (High Voltage Method) Description Device ID (Models 01, 02) Manufacturer ID: Spansion Products CE# OE# WE# A20 to A12 L L H BA A11 to A10 X A9 A8 to A7 VID X DQ15 to DQ8 A0 BYTE# = VIH BYTE# = VIL DQ7 to DQ0 L L X X 01h A6 A5 to A4 A3 A2 A1 L X L L Read Cycle 1 L L L L H 22h Read Cycle 2 L H H H L 22h L L H BA X VID X Read Cycle 3 Device ID (Models 21, 22) Device ID (Models 31, 32) Device ID (Models 41, 42) X L L L L L L L H H H BA BA BA X X X VID VID VID X X X L L L X X X 7Eh 0Ah X H H H H 22h H X X L 22h H H X X X X L L 22h 22h 00h (bottom boot) 01h (top boot) X X X 56h (bottom boot) 55h (top boot) 53h (bottom boot) 50h (top boot) 5Fh (bottom boot) 5Ch (top boot) Sector Protection Verification L L H SA X VID X L X L L H L X X 01h (protected), 00h (unprotected) Secured Silicon Indicator Bit (DQ6, DQ7) L L H BA X VID X L X L L H H X X 42h (customer locked), 82h (not customer locked) (See Note) Legend L = Logic Low = VIL H = Logic High = VIH BA = Bank Address SA = Sector Address X = Don't care. Note Some current and most future Spansion devices (including future revisions of this device) offer an option for programming and permanently locking the Secured Silicon Sector at the factory. The Secured Silicon Indicator data changes to 82h if factory locked, 42h if customer locked, and 02h (not 82h) if non-factory/customer locked. August 31, 2009 S29JL032H_00_B8 S29JL032H 21 D at a 8.10 S hee t Sector/Sector Block Protection and Unprotection Note: For the following discussion, the term "sector" applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 8.6). The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. Table 8.6 S29JL032H Boot Sector/Sector Block Addresses for Protection/Unprotection (Top Boot Devices) Sector A20-A12 Sector/ Sector Block Size SA0 000000XXX 64 Kbytes 000001XXX SA1-SA3 000010XXX 192 (3X64) Kbytes 000011XXX SA4-SA7 0001XXXXX 256 (4X64) Kbytes SA8-SA11 0010XXXXX 256 (4X64) Kbytes SA12-SA15 0011XXXXX 256 (4X64) Kbytes SA16-SA19 0100XXXXX 256 (4X64) Kbytes SA20-SA23 0101XXXXX 256 (4X64) Kbytes SA24-SA27 0110XXXXX 256 (4X64) Kbytes SA28-SA31 0111XXXXX 256 (4X64) Kbytes SA32-SA35 1000XXXXX 256 (4X64) Kbytes SA36-SA39 1001XXXXX 256 (4X64) Kbytes SA40-SA43 1010XXXXX 256 (4X64) Kbytes SA44-SA47 1011XXXXX 256 (4X64) Kbytes SA48-SA51 1100XXXXX 256 (4X64) Kbytes SA52-SA55 1101XXXXX 256 (4X64) Kbytes SA56-SA59 1110XXXXX 256 (4X64) Kbytes 111100XXX SA60-SA62 111101XXX 192 (3X64) Kbytes 111110XXX 22 SA63 111111000 8 Kbytes SA64 111111001 8 Kbytes SA65 111111010 8 Kbytes SA66 111111011 8 Kbytes SA67 111111100 8 Kbytes SA68 111111101 8 Kbytes SA69 111111110 8 Kbytes SA70 111111111 8 Kbytes S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Table 8.7 S29JL032H Sector/Sector Block Addresses for Protection/Unprotection (Bottom Boot Devices) Sector A20-A12 Sector/ Sector Block Size SA70 111111XXX 64 Kbytes 111110XXX SA69-SA67 111101XXX 192 (3X64) Kbytes 111100XXX SA66-SA63 1110XXXXX 256 (4X64) Kbytes SA62-SA59 1101XXXXX 256 (4X64) Kbytes SA58-SA55 1100XXXXX 256 (4X64) Kbytes SA54-SA51 1011XXXXX 256 (4X64) Kbytes SA50-SA47 1010XXXXX 256 (4X64) Kbytes SA46-SA43 1001XXXXX 256 (4X64) Kbytes SA42-SA39 1000XXXXX 256 (4X64) Kbytes SA38-SA35 0111XXXXX 256 (4X64) Kbytes SA34-SA31 0110XXXXX 256 (4X64) Kbytes SA30-SA27 0101XXXXX 256 (4X64) Kbytes SA26-SA23 0100XXXXX 256 (4X64) Kbytes SA22-SA19 0011XXXXX 256 (4X64) Kbytes SA18-SA15 0010XXXXX 256 (4X64) Kbytes SA14-SA11 0001XXXXX 256 (4X64) Kbytes 000011XXX SA10-SA8 000010XXX 192 (3X64) Kbytes 000001XXX SA7 000000111 8 Kbytes SA6 000000110 8 Kbytes SA5 000000101 8 Kbytes SA4 000000100 8 Kbytes SA3 000000011 8 Kbytes SA2 000000010 8 Kbytes SA1 000000001 8 Kbytes SA0 000000000 8 Kbytes Sector protect/Sector Unprotect requires VID on the RESET# pin only, and can be implemented either insystem or via programming equipment. Figure 8.2 on page 25 shows the algorithms and Figure 17.13 on page 55 shows the timing diagram. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Note that the sector unprotect algorithm unprotects all sectors in parallel. All previously protected sectors must be individually re-protected. To change data in protected sectors efficiently, the temporary sector unprotect function is available. See Temporary Sector Unprotect on page 54.. The device is shipped with all sectors unprotected. Optional Spansion programming service enable programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office for details. It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 21 for details. August 31, 2009 S29JL032H_00_B8 S29JL032H 23 D at a 8.11 S hee t Write Protect (WP#) The Write Protect function provides a hardware method of protecting certain boot sectors without using VID. This function is one of two provided by the WP#/ACC pin. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two outermost 8 Kbyte boot sectors independently of whether those sectors were protected or unprotected using the method described in Sector/Sector Block Protection and Unprotection on page 22. The two outermost 8 Kbyte boot sectors are the two sectors containing the lowest addresses in a bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-configured device. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8K Byte boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotected using the method described in Sector/ Sector Block Protection and Unprotection on page 22. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Table 8.8 WP#/ACC Modes WP# Input Voltage 8.12 Device Mode VIL Disables programming and erasing in the two outermost boot sectors VIH Enables programming and erasing in the two outermost boot sectors, dependent on whether they were last protected or unprotected VHH Enables accelerated programming (ACC). See Accelerated Program Operation on page 14. Temporary Sector Unprotect (Note: For the following discussion, the term "sector" applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 8.6 on page 22 and Table 8.7 on page 23).) This feature allows temporary unprotection of previously protected sectors to change data in-system. The Temporary Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 8.1 shows the algorithm, and Figure 17.12 on page 54 shows the timing diagrams, for this feature. If the WP#/ACC pin is at VIL, the two outermost boot sectors will remain protected during the Temporary sector Unprotect mode. Figure 8.1 Temporary Sector Unprotect Operation START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) Notes 1. All protected sectors unprotected (If WP#/ACC = VIL, the outermost two boot sectors will remain protected). 2. All previously protected sectors are protected once again. 24 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Figure 8.2 In-System Sector Protect/Unprotect Algorithms START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 ms Temporary Sector Unprotect Mode No PLSCNT = 1 RESET# = VID Wait 1 ms No First Write Cycle = 60h? First Write Cycle = 60h? Yes Yes Set up sector address No All sectors protected? Sector Protect: Write 60h to sector address with A6=0, A3=0, A2=0, A1=1, A0=0 Yes Set up first sector address Sector Unprotect: Write 60h to sector address with Wait 150 s Increment PLSCNT Temporary Sector Unprotect Mode A6=1, A3=0, A2=0, A1=1, A0=0 Verify Sector Protect: Write 40h to sector address with A6=0, A3=0, Reset PLSCNT = 1 Wait 15 ms A2=0, A1=1, A0=0 Verify Sector Unprotect: Write 40h to sector address with Read from sector address with A6=0, A3=0, A2=0, A1=1, A0=0 Increment PLSCNT No A6=1, A3=0, A2=0, A1=1, A0=0 No PLSCNT = 25? Read from sector address with Data = 01h? Yes Yes No Yes Device failed PLSCNT = 1000? Protect another sector? No Yes Remove VID from RESET# Device failed Write reset command Sector Protect Algorithm Sector Protect complete A6=1, A3=0, A2=0, A1=1, A0=0 Set up next sector address No Data = 00h? Yes Last sector verified? No Yes Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete August 31, 2009 S29JL032H_00_B8 S29JL032H 25 D at a 8.13 S hee t Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length, and is shipped unprotected, allowing customers to utilize that sector in any manner they choose. The Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been customer locked and is 0 if customer lockable. DQ7, alternatively, is set to 0 if the part has been customer locked, and is 1 if customer-lockable. Some current and most future Spansion devices (including future revisions of this device) will offer an option for programming and permanently locking the Secured Silicon Sector at the factory. DQ7 will become the Secured Silicon Factory Indicator bit, and as such the Secured Silicon Indicator Bit data will change to 82h for factory locked, 42h for customer locked, and 02h (no longer 82h) for not factory/customer locked. The system accesses the Secured Silicon through a command sequence (see Enter Secured Silicon Sector/ Exit Secured Silicon Sector Command Sequence on page 32). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of Sector 0. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. 8.13.1 Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory In a factory locked device, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. The device is preprogrammed with both a random number and a secure ESN. The 8-word random number is at addresses 000000h-000007h in word mode (or 000000h-00000Fh in byte mode). The secure ESN is programmed in the next 8 words at addresses 000008h-00000Fh (or 000010h-00001Fh in byte mode). The device is available preprogrammed with one of the following: A random, secure ESN only Customer code through Spansion programming services Both a random, secure ESN and customer code through Spansion programming services Contact an your local sales office for details on using Spansion programming services. 8.13.2 Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory If the security feature is not required, the Secured Silicon Sector can be treated as an additional Flash memory space. The Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the Secured Silicon Sector. The Secured Silicon Sector area can be protected using one of the following procedures: Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the insystem sector protect algorithm as shown in Figure 8.2 on page 25, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured Silicon Sector Region without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector. To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in Figure 8.3 on page 27. Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing the remainder of the array. The Secured Silicon Sector lock must be used with caution since, once locked, there is no procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. 26 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Figure 8.3 Secured Silicon Sector Protect Verify START RESET# = VIH or VID Wait 1 ms Write 60h to any address Write 40h to Secure Silicon Sector address with A6 = 0, A1 = 1, A0 = 0 Read from Secure Silicon Sector address with A6 = 0, A1 = 1, A0 = 0 8.14 If data = 00h, Secure Silicon Sector is unprotected. If data = 01h, Secure Silicon Sector is protected. Remove VIH or VID from RESET# Write reset command Secure Silicon Sector Protect Verify complete Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 10.1 on page 37 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. 8.14.1 Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. 8.14.2 Write Pulse "Glitch" Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. 8.14.3 Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. 8.14.4 Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. August 31, 2009 S29JL032H_00_B8 S29JL032H 27 D at a S hee t 9. Common Flash Memory Interface (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 9.1. To terminate reading CFI data, the system must write the reset command. The CFI Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table 9.1. The system must write the reset command to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales office for copies of these documents. Table 9.1 CFI Query Identification String Addresses (Word Mode) Addresses (Byte Mode) Data 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h Query Unique ASCII string "QRY" 13h 14h 26h 28h 0002h 0000h Primary OEM Command Set 15h 16h 2Ah 2Ch 0040h 0000h Address for Primary Extended Table 17h 18h 2Eh 30h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 32h 34h 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Description Table 9.2 System Interface String Addresses (Word Mode) 28 Addresses (Byte Mode) Data Description 1Bh 36h 0027h VCC Min. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1Ch 38h 0036h VCC Max. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0003h Typical timeout per single byte/word write 2N s 20h 40h 0000h Typical timeout for Min. size buffer write 2N s (00h = not supported) 21h 42h 0009h Typical timeout per individual block erase 2N ms 22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0005h Max. timeout for byte/word write 2N times typical 24h 48h 0000h Max. timeout for buffer write 2N times typical 25h 4Ah 0004h Max. timeout per individual block erase 2N times typical 26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Table 9.3 Device Geometry Definition Addresses (Word Mode) Addresses (Byte Mode) Data 27h 4Eh 0016h Device Size = 2N byte 28h 29h 50h 52h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 58h 0002h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 003Eh 0000h 0000h 0001h Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100) 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100) August 31, 2009 S29JL032H_00_B8 Description S29JL032H 29 D at a S hee t Table 9.4 Primary Vendor-Specific Extended Query Addresses (Word Mode) Addresses (Byte Mode) Data 40h 41h 42h 80h 82h 84h 0050h 0052h 0049h Query-unique ASCII string "PRI" 43h 86h 0031h Major version number, ASCII (reflects modifications to the silicon) 44h 88h 0033h Minor version number, ASCII (reflects modifications to the CFI table) 45h 8Ah 000Ch Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Description Silicon Revision Number (Bits 7-2) 46h 8Ch 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 8Eh 0001h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 90h 0001h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 92h 0004h Sector Protect/Unprotect scheme 01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode Number of sectors (excluding Bank 1) 4Ah 94h 00XXh XX = 38 (models 01, 02, 21, 22) XX = 30 (models 31, 32) XX = 20 (models 41, 42) 4Bh 96h 0000h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 98h 0000h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page 4Dh 9Ah 0085h 4Eh 9Ch 0095h 4Fh 9Eh 000Xh 50h A0h 0001h ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device Program Suspend 0 = Not supported, 1 = Supported Bank Organization 57h AEh 000Xh 00 = Data at 4Ah is zero X = 4 (4 banks, models 01, 02) X = 2 (2 banks, all other models) Bank 1 Region Information - Number of sectors on Bank 1 58h B0h 00XXh XX = 0F (models 01, 02, 21, 22) XX = 17 (models 31, 32) XX = 27 (models 41, 42) Bank 2 Region Information - Number of sectors in Bank 2 XX = 18 (models 01, 02) 59h B2h 00XXh XX = 38 (models 21, 22) XX = 30 (models 31, 32) XX = 20 (models 41, 42) Bank 3 Region Information - Number of sectors in Bank 3 5Ah B4h 00XXh XX = 18 (models 01, 02) XX = 00 (all other models) Bank 4 Region Information - Number of sectors in Bank 4 5Bh B6h 00XXh XX = 08 (models 01, 02) XX = 00 (all other models) 30 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et 10. Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. Table 10.1 on page 37 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A hardware reset may be required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to AC Characteristics on page 47 for timing diagrams. 10.1 Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspendread mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands on page 36 for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See Reset Command on page 31, for more information. See also Requirements for Reading Array Data on page 14 for more information. Read-Only Operations on page 47 provides the read parameters, and Figure 17.1 on page 47 shows the timing diagram. 10.2 Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erase-suspend-read mode if that bank was in Erase Suspend). August 31, 2009 S29JL032H_00_B8 S29JL032H 31 D at a 10.3 S hee t Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in another bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of autoselect codes without reinitiating the command sequence. Table 10.1 on page 37 shows the address and data requirements. To determine sector protection information, the system must write to the appropriate bank address (BA) and sector address (SA). Table 8.3 on page 17 and Table 8.4 on page 19 show the address range and bank number associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). 10.4 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation. The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table 10.1 on page 37 shows the address and data requirements for both command sequences. See also Secured Silicon Sector Flash Memory Region on page 26 for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. 10.5 Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 10.1 on page 37 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to Write Operation Status on page 38 for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from "0" back to a "1." Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still "0." Only erase operations can convert a "0" to a "1." 32 S29JL032H S29JL032H_00_B8 August 31, 2009 Data 10.5.1 She et Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 10.1 on page 37 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. (Table 10.1 on page 37). The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for any operation other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 10.1 illustrates the algorithm for the program operation. Refer to Erase and Program Operations on page 50 for parameters, and Figure 17.5 on page 51 for timing diagrams. Figure 10.1 Program Operation START Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed Note See Table 10.1 on page 37 for program command sequence. August 31, 2009 S29JL032H_00_B8 S29JL032H 33 D at a 10.6 S hee t Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 10.1 on page 37 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/ BY#. Refer to Write Operation Status on page 38 for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. Figure 10.2 on page 35 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 50 for parameters, and Figure 17.7 on page 52 for timing diagrams. 10.7 Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 10.1 on page 37 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 80 s occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 80 s, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to the read mode. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# or CE# pulse (first rising edge) in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation Status on page 38 for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. Figure 10.2 on page 35 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 50 for parameters, and Figure 17.7 on page 52 for timing diagrams. 34 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Figure 10.2 Erase Operation START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes 1. See Table 10.1 on page 37 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. August 31, 2009 S29JL032H_00_B8 S29JL032H 35 D at a 10.8 S hee t Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 80 s time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. The bank address must contain one of the sectors currently selected for erase. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status on page 38 for information on these status bits. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to Write Operation Status on page 38 for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to Autoselect Mode on page 21 and Autoselect Command Sequence on page 32 for details. To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. 36 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Cycles Table 10.1 S29JL032H Command Definitions Command Sequence (Note 1) Bus Cycles (Notes 2-5) First Second Addr Data Read (Note 6) 1 RA RD Reset (Note 7) 1 XXX F0 Word Manufacturer ID 555 4 Autoselect (Note 8) Byte Byte Word Secured Silicon Sector Factory Protect (Note 10) Byte Word Sector/Sector Block Protect Verify (Note 11) Byte Enter Secured Silicon Sector Region Byte Exit Secured Silicon Sector Region Byte Word Word Word Program Word Unlock Bypass 2AA 2 XXX A0 PA PD 2 XXX 90 XXX 00 6 Byte Word Sector Erase 2AA AA AAA 1 BA B0 Erase Resume (Note 15) 1 BA 30 Word CFI Query (Note 16) XXX 00 A0 PA PD 555 555 80 10 AAA 2AA AA AAA 555 55 555 555 80 AAA 2AA AA AAA 555 55 555 Erase Suspend (Note 14) 00/01 90 AAA 2AA AA AAA (SA)X02 (SA)X04 20 55 555 555 6 Byte 82/02 AAA Unlock Bypass Reset (Note 13) Chip Erase (BA)X1E 555 55 555 555 (BA)X1C AAA Unlock Bypass Program (Note 12) Word See Table 8.5 555 55 AA (BA)X0F 555 555 AAA See Table 8.5 AAA 2AA 555 3 Byte (BA)X0E 88 55 AA Data 555 555 AAA Addr AAA 2AA 555 4 Byte Data (BA)X03 90 55 AA Sixth Addr (BA)X06 (BA)555 555 AAA (BA)X02 (BA)AAA 2AA 555 4 See Table 8.5 90 55 AA AAA (BA)X01 (BA)555 555 555 3 01 (BA)AAA 2AA AA (BA)X00 90 55 555 AAA 90 (BA)AAA 2AA 555 4 Data (BA)555 55 AA AAA Fifth Addr (BA)555 555 555 4 Fourth Data (BA)AAA 2AA AA AAA Third Addr 55 555 555 6 Data 2AA AA AAA Word Device ID (Note 9) Addr 55 SA 30 555 55 1 Byte 98 AA Legend X = Don't care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A20-A12 uniquely select any sector. Refer to Table 8.3 on page 17 and Table 8.4 on page 19 for information on sector addresses. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. A20-A18 uniquely select a bank. Notes 1. See Table 8.1 on page 13 for description of bus operations. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth, fifth, and sixth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ15-DQ8 are don't care in command sequences, except for RD and PD. 5. Unless otherwise noted, address bits A20-A11 are don't cares for unlock and command cycles, unless SA or PA is required. 6. No unlock or command cycles required when bank is reading array data. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or Secured Silicon Sector factory protect information. Data bits DQ15-DQ8 are don't care. While reading the autoselect addresses, the bank address must be the same until a reset command is given. See Autoselect Command Sequence on page 32 for more information. 9. For models 01, 02, the device ID must be read across the fourth, fifth, and sixth cycles. August 31, 2009 S29JL032H_00_B8 S29JL032H 37 D at a S hee t 10. The data is 42h for customer locked, and 82h for not customer locked. Some current and most future Spansion devices (including future revisions of this device) will offer an option for programming and permanently locking the Secured Silicon Sector at the factory. The Secured Silicon Indicator data will change to 82h for factory locked, 42h for customer locked, and 02h (no longer 82h) for not factory/customer locked. 11. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. 12. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 13. The Unlock Bypass Reset command is required to return to the read mode when the bank is in the unlock bypass mode. 14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. 16. Command is valid when device is ready to read array data or when device is in autoselect mode. 11. Write Operation Status The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 11.1 on page 42 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. 11.1 DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 s, then that bank returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a "0" on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a "1" on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 s, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15-DQ0 (or DQ7-DQ0 for x8-only device) on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ15-DQ8 (DQ7-DQ0 for x8-only device) while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ15-DQ0 may be still invalid. Valid data on DQ15-DQ0 (or DQ7-DQ0 for x8-only device) will appear on successive read cycles. Table 11.1 on page 42 shows the outputs for Data# Polling on DQ7. Figure 11.1 on page 39 shows the Data# Polling algorithm. Figure 17.9 on page 53 shows the Data# Polling timing diagram. 38 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Figure 11.1 Data# Polling Algorithm START Read DQ7-DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7-DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5. 11.2 RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read mode. Table 11.1 on page 42 shows the outputs for RY/BY#. 11.3 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. August 31, 2009 S29JL032H_00_B8 S29JL032H 39 D at a S hee t After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 s, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 38). If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Figure 11.2 Toggle Bit Algorithm START Read Byte (DQ7-DQ0) Address =VA Read Byte (DQ7-DQ0) Address =VA Toggle Bit = Toggle? No Yes No DQ5 = 1? Yes Read Byte Twice (DQ7-DQ0) Address = VA Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note The system should recheck the toggle bit even if DQ5 = "1" because the toggle bit may stop toggling as DQ5 changes to "1." See the subsections on DQ6 and DQ2 for more information. 40 S29JL032H S29JL032H_00_B8 August 31, 2009 Data 11.4 She et DQ2: Toggle Bit II The "Toggle Bit II" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 11.1 on page 42 to compare outputs for DQ2 and DQ6. Figure 11.2 on page 40 shows the toggle bit algorithm in flowchart form, and DQ2: Toggle Bit II on page 41 explains the algorithm. See also DQ6: Toggle Bit I on page 39. Figure 17.10 on page 53 shows the toggle bit timing diagram. Figure 17.11 on page 54 shows the differences between DQ2 and DQ6 in graphical form. 11.5 Reading Toggle Bits DQ6/DQ2 Refer to Figure 11.2 on page 40 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15-DQ0 (or DQ7-DQ0 for x8-only device) at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ15-DQ0 (or DQ7-DQ0 for x8-only device) on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 11.2 on page 40). 11.6 DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1," indicating that the program or erase cycle was not successfully completed. The device may output a "1" on DQ5 if the system tries to program a "1" to a location that was previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a "1." Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). August 31, 2009 S29JL032H_00_B8 S29JL032H 41 D at a 11.7 S hee t DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a "0" to a "1." If the time between additional sector erase commands from the system can be assumed to be less than 80 s, the system need not monitor DQ3. See also Sector Erase Command Sequence on page 34. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is "1," the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is "0," the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 11.1 shows the status of DQ3 relative to the other status bits. Table 11.1 Write Operation Status Status Standard Mode Erase Suspend Mode Embedded Program Algorithm Embedded Erase Algorithm Erase-SuspendRead DQ7 (Note 2) DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) RY/BY# DQ7# Toggle 0 N/A No toggle 0 0 Toggle 0 1 Toggle 0 Erase Suspended Sector 1 No toggle 0 N/A Toggle 1 Non-Erase Suspended Sector Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Erase-Suspend-Program Notes 1. DQ5 switches to `1' when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. 42 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et 12. Absolute Maximum Ratings Storage Temperature, Plastic Packages -65C to +150C Ambient Temperature with Power Applied -65C to +125C Voltage with Respect to Ground, VCC (Note 1) -0.5 V to +4.0 V A9, OE#, and RESET# (Note 2) -0.5 V to +12.5 V WP#/ACC -0.5 V to +9.5 V -0.5 V to VCC +0.5 V All other pins (Note 1) Output Short Circuit Current (Note 3) 200 mA Notes 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 12.1 on page 43. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 12.2 on page 43. 2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is -0.5 V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 12.1 on page 43. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Figure 12.1 Maximum Negative Overshoot Waveform 20 ns 20 ns +0.8 V -0.5 V -2.0 V 20 ns Figure 12.2 Maximum Positive Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns August 31, 2009 S29JL032H_00_B8 S29JL032H 20 ns 43 D at a S hee t 13. Operating Ranges Industrial (I) Devices Ambient Temperature (TA) -40C to +85C VCC Supply Voltages VCC for standard voltage range 2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. 14. DC Characteristics 14.1 CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ILIT A9, OE# and RESET# Input Load Current VCC = VCC max, OE# = VIH; A9 or OE# or RESET# = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max, OE# = VIH ILR Reset Leakage Current VCC = VCC max; RESET# = 12.5 V ICC1 VCC Active Read Current (Notes 1, 2) Typ Max Unit 1.0 A 35 A 1.0 A 35 A CE# = VIL, OE# = VIH, Byte Mode 5 MHz 10 16 1 MHz 2 4 CE# = VIL, OE# = VIH, Word Mode 5 MHz 10 16 mA 1 MHz 2 4 ICC2 VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH, WE# = VIL 15 30 mA ICC3 VCC Standby Current (Note 2) CE#, RESET# = VCC 0.3 V 0.2 10 A ICC4 VCC Reset Current (Note 2) RESET# = VSS 0.3 V 0.2 10 A ICC5 Automatic Sleep Mode (Notes 2, 4) VIH = VCC 0.3 V; VIL = VSS 0.3 V 0.2 10 A VCC Active Read-While-Program Current (Notes 1, 2) Byte 21 45 ICC6 CE# = VIL, OE# = VIH Word 21 45 VCC Active Read-While-Erase Current (Notes 1, 2) Byte 21 45 ICC7 CE# = VIL, OE# = VIH Word 21 45 ICC8 VCC Active Program-While-EraseSuspended Current (Notes 2, 5) CE# = VIL, OE# = VIH 17 35 mA mA mA VIL Input Low Voltage -0.5 0.8 V VIH Input High Voltage 0.7 x VCC VCC + 0.3 V VHH Voltage for WP#/ACC Sector Protect/ Unprotect and Program Acceleration VCC = 3.0 V 10% 8.5 9.5 V VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 3.0 V 10% 8.5 12.5 V VOL Output Low Voltage IOL = 2.0 mA, VCC = VCC min 0.45 V VOH1 Output High Voltage VOH2 VLKO IOH = -2.0 mA, VCC = VCC min 0.85 x VCC IOH = -100 A, VCC = VCC min VCC-0.4 Low VCC Lock-Out Voltage (Note 5) 1.8 V 2.0 2.3 V Notes 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 5. Not 100% tested. 44 S29JL032H S29JL032H_00_B8 August 31, 2009 Data 14.2 She et Zero-Power Flash Figure 14.1 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) Supply Current in mA 25 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 Time in ns Note Addresses are switching at 1 MHz Figure 14.2 Typical ICC1 vs. Frequency 12 3.6 V 10 2.7 V Supply Current in mA 8 6 4 2 0 1 2 3 4 5 Frequency in MHz Note T = 25 C August 31, 2009 S29JL032H_00_B8 S29JL032H 45 D at a S hee t 15. Test Conditions Figure 15.1 Test Setup 3.3 V 2.7 k Device Under Test CL 6.2 k Note Diodes are IN3064 or equivalent. Table 15.1 Test Specifications Test Condition 60 70, 90 Output Load Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 100 Input Rise and Fall Times Input Pulse Levels pF 5 ns 0.0 or Vcc V Input timing measurement reference levels 0.5 Vcc V Output timing measurement reference levels 0.5 Vcc V 16. Key To Switching Waveforms Waveform Inputs Outputs Steady Changing from H to L Changing from L to H Don't Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) Figure 16.1 Input Waveforms and Measurement Levels Vcc Input 0.5 Vcc Measurement Level 0.5 Vcc Output 0.0 V 46 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et 17. AC Characteristics 17.1 Read-Only Operations Parameter JEDEC Std. tAVAV tRC tAVQV Speed Options Description Test Setup Read Cycle Time (Note 1) tACC Address to Output Delay CE#, OE# = VIL OE# = VIL 60 70 90 Unit Min 60 70 90 ns Max 60 70 90 ns ns tELQV tCE Chip Enable to Output Delay Max 60 70 90 tGLQV tOE Output Enable to Output Delay Max 25 30 35 tEHQZ tDF Chip Enable to Output High Z (Notes 1, 3) Max 16 ns tGHQZ tDF Output Enable to Output High Z (Notes 1, 3) Max 16 ns tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns Read Min 0 ns tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling Min tAXQX 5 10 ns ns Notes 1. Not 100% tested. 2. See Figure 15.1 on page 46 and Table 15.1 on page 46 for test specifications 3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC/2. The time from OE# high to the data bus driven to VCC/2 is taken as tDF. Figure 17.1 Read Operation Timings tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# August 31, 2009 S29JL032H_00_B8 0V S29JL032H 47 D at a 17.2 S hee t Hardware Reset (RESET#) Parameter JEDEC Std Description tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) All Speed Options Unit Max 20 s Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 s tRB RY/BY# Recovery Time Min 0 ns Note Not 100% tested. Figure 17.2 Reset Timings RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP 48 S29JL032H S29JL032H_00_B8 August 31, 2009 Data 17.3 She et Word/Byte Configuration (BYTE#) Parameter JEDEC Speed Options Std. Description tELFL/tELFH 60 CE# to BYTE# Switching Low or High 70 Max tFLQZ BYTE# Switching Low to Output HIGH Z Max tFHQV BYTE# Switching High to Output Active Max 90 5 ns 16 60 70 Unit ns 90 ns Figure 17.3 BYTE# Timings for Read Operations CE# OE# BYTE# tELFL BYTE# Switching from word to byte mode Data Output (DQ14-DQ0) DQ14-DQ0 Data Output (DQ7-DQ0) Address Input DQ15 Output DQ15/A-1 tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode Data Output (DQ7-DQ0) DQ14-DQ0 Address Input DQ15/A-1 Data Output (DQ14-DQ0) DQ15 Output tFHQV Figure 17.4 BYTE# Timings for Write Operations CE# The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note Refer to the Erase/Program Operations table for tAS and tAH specifications. August 31, 2009 S29JL032H_00_B8 S29JL032H 49 D at a 17.4 S hee t Erase and Program Operations Parameter Speed Options JEDEC Std Description tAVAV tWC Write Cycle Time (Note 1) tAS Min 60 70 90 Unit 60 70 90 ns Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 12 ns tAH Address Hold Time Min tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min tDVWH tDS Data Setup Time Min tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tAVWL tWLAX tGHWL 35 40 45 0 35 40 ns ns 45 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 25 30 35 ns tWPH Write Pulse Width High Min 25 30 30 ns tSR/W Latency Between Read and Write Operations Min 0 Byte Typ 4 Word Typ 6 Typ 4 s tWHDL tWHWH1 tWHWH1 Programming Operation (Note 2) tWHWH1 tWHWH1 Accelerated Programming Operation, Byte or Word (Note 2) tWHWH2 tWHWH2 ns s Sector Erase Operation (Note 2) Typ 0.4 sec tVCS VCC Setup Time (Note 1) Min 50 s tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Max 90 ns tBUSY Notes 1. Not 100% tested. 2. See Erase and Programming Performance on page 57 for more information. 50 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Figure 17.5 Program Operation Timings Read Status Data (last two cycles) Program Command Sequence (last two cycles) tAS tWC Addresses 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH PD A0h Data Status tBUSY DOUT tRB RY/BY# VCC tVCS Notes 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 17.6 Accelerated Program Timing Diagram VHH WP#/ACC VIL or VIH VIL or VIH tVHH August 31, 2009 S29JL032H_00_B8 tVHH S29JL032H 51 D at a S hee t Figure 17.7 Chip/Sector Erase Operation Timings Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 38. 2. These waveforms are for the word mode. Figure 17.8 Back-to-back Read/Write Cycle Timings Addresses tWC tWC tRC Valid PA Valid RA tWC Valid PA Valid PA tAH tCPH tACC tCE CE# tCP tOE OE# tOEH tGHWL tWP WE# tWPH tDF tDS tOH tDH Data Valid Out Valid In Valid In Valid In tSR/W WE# Controlled Write Cycle 52 Read Cycle S29JL032H CE# or CE2# Controlled Write Cycles S29JL032H_00_B8 August 31, 2009 Data She et Figure 17.9 Data# Polling Timings (During Embedded Algorithms) Addresses VA VA VA tACC tCE CE# tCH tOE OE tOEH WE# tOH DQ7 DQ0-DQ6 Complement Compleme Status Status Valid Data Tru Valid Data Tru High Z High Z tBUSY RY/BY# Note VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 17.10 Toggle Bit Timings (During Embedded Algorithms) tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 Valid Data tOE Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Note VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. August 31, 2009 S29JL032H_00_B8 S29JL032H 53 D at a S hee t Figure 17.11 DQ2 vs. DQ6 Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Suspend Read Erase Resume Erase Suspend Read Erase Complete Erase DQ6 DQ2 Note DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. 17.5 Temporary Sector Unprotect Parameter JEDEC Std Description All Speed Options Unit tVIDR VID Rise and Fall Time (See Note) Min 500 ns tVHH VHH Rise and Fall Time (See Note) Min 250 ns tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 s tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min 4 s Note Not 100% tested. Figure 17.12 Temporary Sector Unprotect Timing Diagram VID RESET# VID VSS, VIL, or VIH VSS, VIL, or VIH tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRRB tRSP RY/BY# 54 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Figure 17.13 Sector/Sector Block Protect and Unprotect Timing Diagram VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Group Protect/Unprotect Data 60h Valid* Verify 60h 40h Status 1 s Sector Group Protect: 150 s Sector Group Unprotect: 15 ms CE# WE# OE# Note *For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0 17.6 Alternate CE# Controlled Erase and Program Operations Parameter Speed Options JEDEC Std. tAVAV tWC Write Cycle Time (Note 1) Description Min 60 70 90 60 70 90 tAVWL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 35 40 45 35 40 45 0 Unit ns ns ns tDVEH tDS Data Setup Time Min tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min tELEH tCP CE# Pulse Width Min 25 30 35 ns tEHEL tCPH CE# Pulse Width High Min 25 30 30 ns 0 Byte Typ 4 Word Typ 6 ns ns tWHWH1 tWHWH1 Programming Operation (Note 2) tWHWH1 tWHWH1 Accelerated Programming Operation, Byte or Word (Note 2) Typ 4 s tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec s Notes 1. Not 100% tested. 2. See Erase and Programming Performance on page 57 for more information. August 31, 2009 S29JL032H_00_B8 S29JL032H 55 D at a S hee t Figure 17.14 Alternate CE# Controlled Write (Erase/Program) Operation Timings 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. 4. Waveforms are for the word mode. 56 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et 18. Erase and Programming Performance Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time Parameter 0.4 5 sec Chip Erase Time 28 Excludes 00h programming prior to erasure (Note 4) Byte Program Time 4 80 s Word Program Time 6 100 s Accelerated Byte/Word Program Time 4 70 s Byte Mode 12.6 50 Word Mode 12.0 35 10 30 Chip Program Time (Note 3) Accelerated Mode sec Excludes system level overhead (Note 5) sec Notes 1. Typical program and erase times assume the following conditions: 25C, VCC = 3.0 V, 100,000 cycles; checkerboard data pattern. 2. Under worst case conditions of 90C, VCC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10.1 on page 37 for further information on command definitions. 6. The device has a minimum cycling endurance of 100,000 cycles per sector. 19. TSOP Pin Capacitance Parameter Symbol Parameter Description Typ Max Unit CIN Input Capacitance VIN = 0 Test Setup TSOP 6 7.5 pF COUT Output Capacitance VOUT = 0 TSOP 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 TSOP 7.5 9 pF Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz. August 31, 2009 S29JL032H_00_B8 S29JL032H 57 D at a S hee t 20. Physical Dimensions 20.1 TS 048--48-Pin Standard TSOP 2X 0.10 STANDARD PIN OUT (TOP VIEW) 2X (N/2 TIPS) 2X 2 0.10 0.10 1 A2 N SEE DETAIL B A REVERSE PIN OUT (TOP VIEW) 3 B 1 N E 5 N +1 2 N 2 D1 2X (N/2 TIPS) 9 A1 4 D 0.25 e 5 B A B N +1 2 N 2 C SEATING PLANE SEE DETAIL A 0.08MM (0.0031") b M C A-B S 6 7 WITH PLATING 7 (c) c1 b1 SECTION B-B BASE METAL R (c) e/2 GAUGE PLANE PARALLEL TO SEATING PLANE 0.25MM (0.0098") BSC X C L X = A OR B DETAIL A Package TS/TSR 048 Jedec MO-142 (D) DD Symbol A A1 A2 b1 b c1 c D D1 E e L 0 R N MAX 1.20 0.15 0.05 1.05 1.00 0.95 0.20 0.23 0.17 0.27 0.22 0.17 0.16 0.10 0.21 0.10 19.80 20.00 20.20 18.30 18.40 18.50 11.90 12.00 12.10 0.50 BASIC 0.70 0.50 0.60 8 0 0.20 0.08 48 MIN NOM DETAIL B NOTES: 1 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm). (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982) 2 PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP). 3 PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK. 4 TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. 5 DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS 0.15mm (.0059") PER SIDE. 6 DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE 0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028"). 7 THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND 0.25MM (0.0098") FROM THE LEAD TIP. 8 LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE. 9 DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. 3355 \ 16-038.10c 58 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et 21. Revision History 21.1 Revision A0 (May 21, 2004) Initial release. 21.2 Revision A1 (August 5, 2004) Secured Silicon Sector Flash Memory Region Reworded how the Secured Silicon Sector area can be protected. Removed Secured Silicon Sector Protect Verify flowchart. CMOS Compatible Updated Output Low Voltage. Erase and Programming Performance Updated Word and Byte Mode for the Chip Program Time. 21.3 Revision A2 (March 10, 2005) Deleted 55 ns speed option Changed operating voltage (VCC) range for 60ns option Changed standby current (ICC3, ICC4, ICC5) Deleted Secured Silicon sector protection functionality with RESET#=VIH method 21.4 Revision B0 (September 21, 2005) Changed data sheet status from Advance to Preliminary. 21.5 Revision B1 (November 28, 2005) Removed text or changed text in the following sections. Distinctive Characteristics Eliminated sub-bullet under the Secured Silicon Sector information bullet. General Description Eliminated text in the S29JL032H Features section. Device Bus Operations Added Note and made changes to the S29JL032H Autoselect Codes table. Eliminated text from the Secured Silicon Sector Flash Memory Region section. Command Definitions Modified a note in the S29JL032H Command Definitions table. DC Characteristics Modified VOL Parameters. 21.6 Revision B2 (March 13, 2006) Erase and Programming Performance Changed chip program time for byte and word modes. August 31, 2009 S29JL032H_00_B8 S29JL032H 59 D at a 21.7 S hee t Revision B3 (May 19, 2006) Changed document status from Preliminary to Full Production. 21.8 Revision B4 (June 7, 2007) Removed the 7 inch Tape and Reel Packing Type option. 21.9 Revision B5 (August 10, 2007) DC Characteristics Changed VLKO minimum, typical, and maximum values. 21.10 Revision B6 (March 7, 2008) Erase and Programming Performance Changed the maximum sector erase time from 2 seconds to 5 seconds. Global Corrected minor typos 21.11 Revision B7 (July 7, 2008) Word/Byte Configuration (BYTE#) Changed tFHQV condition from Min. to Max. 21.12 Revision B8 (August 31, 2009) Secured Silicon Sector Flash Memory Region Modified Section Section Added Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory In-System Sector Protect/Unprotect Algorithms Updated table 60 S29JL032H S29JL032H_00_B8 August 31, 2009 Data She et Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks and Notice The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind arising out of the use of the information in this document. Copyright (c) 2004-2009 Spansion Inc. All rights reserved. Spansion(R), the Spansion logo, MirrorBit(R), MirrorBit(R) EclipseTM, ORNANDTM, EcoRAMTM and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries. Other names used are for informational purposes only and may be trademarks of their respective owners. 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