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MRF5S21100HR3 MRF5S21100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
!Typical 2--carrier W--CDMA Performance: VDD =28Volts,I
DQ = 1050 mA,
Pout = 23 Watts Avg., f = 2167.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Channel Bandwidth
!Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
!Characterized with Series Equivalent Large--Signal Impedance Parameters
!Internally Matched for Ease of Use
!Qualified Up to a Maximum of 32 VDD Operation
!Integrated ESD Protection
!Lower Thermal Resistance Package
!Low Gold Plating Thickness on Leads, 40"# Nominal.
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +15 Vdc
Total Device Dissipation @ TC=25$C
Derate above 25$C
PD273
1.56
W
W/$C
Storage Temperature Range Tstg -- 65 to +150 $C
Case Operating Temperature TC150 $C
Operating Junction Temperature TJ200 $C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 80$C, 100 W CW
Case Temperature 78$C, 23 W CW
R%JC
0.57
0.64
$C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF5S21100H
Rev. 4, 12/2010
Freescale Semiconductor
Technical Data
MRF5S21100HR3
MRF5S21100HSR3
2110--2170 MHz, 23 W AVG., 28 V
2xW--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF5S21100HR3
CASE 465A--06, STYLE 1
NI--780S
MRF5S21100HSR3
&Freescale Semiconductor, Inc., 2006, 2010.
A
ll rights reserved.
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RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
Charge Device Model C7 (Minimum)
Table 4. Electrical Characteristics (TA=25$C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 "Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 "Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 0.5 "Adc
On Characteristics (DC)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 250 "Adc)
VGS(th) 2.5 2.8 3.5 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
D= 1050 mAdc)
VGS(Q) —3.8 —Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.5Adc)
VDS(on) —0.24 0.3 Vdc
Forward Transconductance
(VDS =10Vdc,I
D=2.5Adc)
gfs — 6 — S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =28Vdc'30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —2.14 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1050 mA, Pout = 23 W Avg., f1 = 2157.5 MHz, f2 =
2167.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ '5MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ '10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain Gps 12.5 13.5 —dB
Drain Efficiency (D24 26 — %
Intermodulation Distortion IM3 —-- 3 7 -- 3 5 dBc
Adjacent Channel Power Ratio ACPR —-- 4 0 -- 3 8 dBc
Input Return Loss IRL — -- 1 6 -- 9 dB
1. Part is internally matched both on input and output.
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RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
R2
VBIAS
VSUPPLY
C11C8C7C5
C14
C3
C10
C1
RF
OUTPUT
RF
INPUT
R1
Z1 Z2 Z3 Z4 Z5 Z6
Z7 Z9
Z8 Z16
Z10 Z11 Z12 Z15 Z17
+
Z10 0.368#x 1.136#Microstrip
Z11 0.151#x 0.393#Microstrip
Z12 0.280#x 0.220#Microstrip
Z13 0.481#x 0.142#Microstrip
Z14 0.138#x 0.080#Microstrip
Z15 0.344#x 0.080#Microstrip
Z16 0.147#x 0.099#Microstrip
Z17 0.859#x 0.080#Microstrip
PCB Arlon GX--0300--SS--22, 0.030#,)r=2.55
Z1 0.674#x 0.080#Microstrip
Z2 0.421#x 0.080#Microstrip
Z3 0.140#x 0.080#Microstrip
Z4 1.031#x 0.080#Microstrip
Z5 0.380#x 0.643#Microstrip
Z6 0.080#x 0.643#Microstrip
Z7 0.927#x 0.048#Microstrip
Z8 0.620#x 0.048#Microstrip
Z9 0.079#x 1.136#Microstrip
DUT
B1
R3
C4
C13
C15
Z13 Z14
C2
C6
W1
R4
C12
+C9
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short RF Bead 2743019447 Fair--Rite
C1, C2 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC
C3 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C4 0.1 "F Chip Capacitor C1210C104J5RAC Kemet
C5, C7 7.5 pF Chip Capacitors ATC100B7R5JT500XT ATC
C6 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C8 1K pF Chip Capacitor ATC100B102JT500XT ATC
C9, C10 0.56 "F Chip Capacitors C1825C564J5RAC Kemet
C11 470 "F, 63 V Electrolytic Capacitor EKME630ELL471MK25S Multicomp
C12 100 "F, 50 V Electrolytic Capacitor MCHT101M1HB--1017--RH Multicomp
C13 0.6--4.5 pF Gigatrim Variable Capacitor 27271SL Johanson
C14 2.7 pF Chip Capacitor ATC100B2R7CT500XT ATC
C15 0.4--2.5 pF Gigatrim Variable Capacitor 27271SL Johanson
R1 1kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA Vishay
R3, R4 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay
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RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
B1
R2 C4
C12
C9
C3 C10
C5 C11C6
C7 C8
W1
R4
C15C14C13
C1
R3
R1
C2
Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout
CUT OUT AREA
VGG VDD
MRF5S21100L
Rev 03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
42
48
56
34
P3dB = 51.88 dBm (154.17 W)
VDD =28Vdc,I
DQ = 1050 mA
Pulsed CW, 8 "sec(on), 1msec(off)
f = 2140 MHz
Actual
Ideal
P1dB = 51.18 dBm (131.22 W)
55
53
52
50
49
36 37 38 4140
54
51
35 39
5
15
2040
-- 4 5
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance
Gps, POWER GAIN (dB)
VDD =28Vdc,P
out =23W(Avg.),I
DQ = 1050 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
-- 5 0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
INPUT RETURN LOSS (dB)IRL,
0
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
14 35
13 30
12 25
11 20
10 --20
9--25
8--30
7--35
6--40
100
11
16
1
IDQ = 1400 mA
650 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
Gps, POWER GAIN (dB)
VDD =28Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
1050 mA
850 mA
1250 mA
15
14
13
12
10 100
-- 5 5
-- 1 5
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
VDD =28Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
IDQ = 1400 mA
650 mA
1050 mA
850 mA
1250 mA
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
10
10
-- 6 0
-- 2 0
1
7th Order
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)IMD,
VDD =28Vdc,P
out = 100 W (PEP), IDQ = 1050 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
0.1
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Pout , OUTPUT POWER (dBm)
(D
(D, DRAIN
EFFICIENCY (%)
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RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
TYPICAL CHARACTERISTICS
0
40
1
-- 5 5
-- 1 5
Gps
ACPR
IM3
Pout, OUTPUT POWER (WATTS) AVG. W--CDMA
Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3 (dBc), ACPR (dBc)
VDD =28Vdc,I
DQ = 1050 mA
f1 = 2135 MHz, f2 = 2145 MHz
2x W--CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
35 --20
30 --25
25 --30
20 --35
15 --40
10 --45
5--50
10
(D
(D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
220
10
9
100
108
107
106
120 140 160 180 200
TJ, JUNCTION TEMPERATURE (_C)
Figure 9. MTTF Factor versus Junction Temperatur
e
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than '10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2for MTTF in a particular application.
MTTF FACTOR (HOURS x AMPS2)
W--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY (%)
10
1
0.1
0.01
0.001
2468
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
-- 11 0
--120
-- 7 0
-- 2 0
-- 8 0
-- 6 0
-- 5 0
(dB)
-- 9 0
--100
-- 4 0
-- 3 0
3.84 MHz
Channel BW
-- I M 3 i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
--ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
20515100-- 5-- 1 0-- 1 5-- 2 0--25 25
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ '5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ '10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
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RF Device Data
Freescale Semiconductor
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Zsource
*
Zload
*
2100
2120
2160
1.2 -- j2.1
2.2 -- j3.0
1.4 -- j2.3
3.4 -- j7.2
3.4 -- j6.5
4.9 -- j7.0
VDD =28Vdc,I
DQ = 1050 mA, Pout =23WAvg.
Zo=10*
Zload
f = 2100 MHz
f = 2200 MHz
Zsource
f = 2100 MHz f = 2200 MHz
2200 1.7 -- j2.13.4 -- j8.6
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
PACKAGE DIMENSIONS
CASE 465--06
ISSUE G
NI--780
MRF5S21100HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
CASE 465A--06
ISSUE H
NI--780S
MRF5S21100HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U-- -- -- 0 . 0 4 0 -- -- -- 1 . 0 2
Z-- -- -- 0 . 0 3 0 -- -- -- 0 . 7 6
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
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MRF5S21100HR3 MRF5S21100HSR3
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RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
4Dec. 2010 !Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
!Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
!Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
!Added Revision History, p. 9
!Data sheet archived. Parts no longer manufactured.
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RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
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Document Number: MRF5S21100H
Rev. 4, 12/2010
