BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series Zener Voltage Regulators www.onsemi.com 250 mW SOT-23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. SOT-23 CASE 318 STYLE 8 3 Cathode Features * * * * * * * * 1 Anode MARKING DIAGRAM 250 mW Rating on FR-4 or FR-5 Board Zener Breakdown Voltage Range - 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Tight Tolerance Series Available (See Page 4) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant XXXMG G 1 XXX = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V-0 Package Shipping BZX84CxxxLT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SZBZX84CxxxLT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BZX84CxxxLT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SZBZX84CxxxLT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel BZX84BxxxLT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SZBZX84BxxxLT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BZX84BxxxLT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SZBZX84BxxxLT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2016 October, 2016 - Rev. 22 1 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Publication Order Number: BZX84C2V4LT1/D BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series MAXIMUM RATINGS Rating Symbol Total Power Dissipation on FR-5 Board, (Note 1) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient Max Unit 250 2.0 500 mW mW/C C/W mW mW/C C/W C PD RqJA Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient PD RqJA 300 2.4 417 Junction and Storage Temperature Range TJ, Tstg -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IF Parameter Symbol QVZ I VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator www.onsemi.com 2 V BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS - BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4LT1G Z11 2.2 2.4 2.6 BZX84C2V7LT1G Z12 2.5 2.7 2.9 BZX84C3V0LT1G Z13 2.8 3 BZX84C3V3LT1G Z14 3.1 BZX84C3V6LT1G Z15 3.4 BZX84C3V9LT1G Z16 BZX84C4V3LT1G BZX84C4V7LT1/T3G VZ2 (V) @ IZT2 = 1 mA (Note 3) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.6 3.8 90 3.7 3.9 4.1 W9 4 4.3 Z1 4.4 4.7 BZX84C5V1LT1/T3G Z2 4.8 BZX84C5V6LT1/T3G Z3 5.2 BZX84C6V2LT1/T3G Z4 BZX84C6V8LT1/T3G BZX84C7V5LT1G VZ3 (V) @ IZT3 = 20 mA (Note 3) Min Max ZZT3 (W) @ IZT3 = 20 mA 600 2.6 3.2 50 600 3 3.6 50 2.7 600 3.3 3.9 2.3 2.9 600 3.6 2.7 3.3 600 3.9 90 2.9 3.5 600 4.6 90 3.3 4 5 80 3.7 4.7 5.1 5.4 60 4.2 5.3 5.6 6 40 4.8 6 5.8 6.2 6.6 10 5.6 Z5 6.4 6.8 7.2 15 Z6 7 7.5 7.9 15 BZX84C8V2LT1G Z7 7.7 8.2 8.7 BZX84C9V1LT1/T3G Z8 8.5 9.1 BZX84C10LT1G Z9 9.4 10 BZX84C11LT1G Y1 10.4 11 BZX84C12LT1G Y2 11.4 BZX84C13LT1G Y3 12.4 BZX84C15LT1/T3G Y4 BZX84C16LT1G BZX84C18LT1/T3G Max Reverse Leakage Current qVZ (mV/k) @ IZT1 = 5 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 50 1 -3.5 0 450 20 1 -3.5 0 450 50 10 1 -3.5 0 450 4.2 40 5 1 -3.5 0 450 4.5 40 5 1 -3.5 0 450 4.1 4.7 30 3 1 -3.5 -2.5 450 600 4.4 5.1 30 3 1 -3.5 0 450 500 4.5 5.4 15 3 2 -3.5 0.2 260 480 5 5.9 15 2 2 -2.7 1.2 225 400 5.2 6.3 10 1 2 -2.0 2.5 200 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 Device* VZ1 Below @ IZT1 = 2 mA VZ2 Below @ IZT2 = 0.1 mA VZ3 Below @ IZT3 = 10 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 BZX84C43LT1G Y15 40 43 46 150 39.7 46 BZX84C47LT1G Y16 44 47 50 170 43.7 50 BZX84C51LT1G Y17 48 51 54 180 47.6 BZX84C56LT1G Y18 52 56 60 200 51.5 BZX84C62LT1G Y19 58 62 66 215 BZX84C68LT1G Y20 64 68 72 BZX84C75LT1G Y21 70 75 79 Device* IR mA @ Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 37.1 41.5 70 0.05 27.3 33.4 41.2 45 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. *Includes SZ-prefix devices where applicable. www.onsemi.com 3 IR mA @ BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS - BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ (Volts) @ IZT = 5 mA (Note 4) Max Reverse Leakage Current ZZT (W) @ IZT = 5 mA (Note 4) IR mA qVZ (mV/k) @ IZT = 5 mA Max C (pF) @ VR =0, f = 1 MHz -3.5 0 450 -3.5 0.2 260 -2.7 1.2 225 2 -2 2.5 200 4 0.4 3.7 185 2 4 1.2 4.5 155 15 1 5 2.5 5.3 140 15 0.7 5 3.2 6.2 135 9.28 15 0.5 6 3.8 7 130 10.2 20 0.2 7 4.5 8 130 12 12.2 25 0.1 8 6 10 130 14.7 15 15.3 30 0.05 10.5 9.2 13 110 15.7 16 16.3 40 0.05 11.2 10.4 14 105 T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85 BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80 Device Marking Min Nom Max Max BZX84B3V3LT1G T2A 3.23 3.3 3.37 95 BZX84B4V7LT1G T10 4.61 4.7 4.79 80 BZX84B5V1LT1G T11 5.00 5.1 5.20 BZX84B5V6LT1G T12 5.49 5.6 BZX84B6V2LT1G T13 6.08 6.2 BZX84B6V8LT1G T14 6.66 BZX84B7V5LT1G T15 BZX84B8V2LT1G T16 BZX84B9V1LT1G, T3G BZX84B10LT1G BZX84B12LT1G VR @ Volts Min 5 1 3 2 60 2 2 5.71 40 1 6.32 10 3 6.8 6.94 15 7.35 7.5 7.65 8.04 8.2 8.36 T17 8.92 9.1 T2E 9.8 10 T18 11.8 BZX84B15LT1G T22 BZX84B16LT1G T19 BZX84B18LT1G Device 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. ELECTRICAL CHARACTERISTICS - BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ (Volts) @ IZT = 2 mA (Note 4) Device* BZX84B27LT1G ZZT (W) @ IZT = 2 mA (Note 4) Device Marking Min Nom Max Max T27 26.5 27 27.5 80 *Includes SZ-prefix devices where applicable. www.onsemi.com 4 Max Reverse Leakage Current IR mA 0.05 qVZ (mV/k) @ IZT = 2 mA Volts Min Max C (pF) @ VR =0, f = 1 MHz 18.9 21.4 25.3 70 VR @ BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series 8 100 7 VZ, TEMPERATURE COEFFICIENT (mV/C) VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C) 1000 IZ = 1 mA TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0.6 0C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage www.onsemi.com 5 1.1 1.2 BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (A) TA = 25C 100 BIAS AT 50% OF VZ NOM 10 1 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 10 1 +150C 0.1 0.01 0.001 +25C 0.0001 -55C 0.00001 0 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) TA = 25C 10 1 0.1 0.01 80 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) www.onsemi.com 6 90 BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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