1Motorola Small–Signal Transistors, FETs and Diodes Device Data
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
•Extremely Fast Switching Speed
•Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 Volts
Forward Power Dissipation, FR–5 Board(1)
@ TA = 25°C
Derate above 25°C
PF400
3.2 mW
mW/°C
Thermal Resistance, Junction to Case RθJL 174 °C/W
Thermal Resistance, Junction to Ambient RθJA 492 °C/W
Forward Current (DC) IF200 Max mA
Non–Repetitive Peak Forward Current
tp < 10 msec IFSM 600 mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA
Junction Temperature TJ125 Max °C
Storage Temperature Range Tstg –55 to +150 °C
DEVICE MARKING
BAT54T1 = BU
1. FR-5 = 1.0 x 0.75 x 0.062 in.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
Order this document
by BAT54T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 425–04, STYLE 1
SOD–123
1
2
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
Motorola, Inc. 1997
1
Cathode 2
Anode
REV 4
BAT54T1
2Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 30 — — Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT— 7.6 10 pF
Reverse Leakage (VR = 25 V) IR—0.5 2.0 µAdc
Forward Voltage (IF = 0.1 mAdc) VF— 0.22 0.24 Vdc
Forward Voltage (IF = 30 mAdc) VF— 0.41 0.5 Vdc
Forward Voltage (IF = 100 mAdc) VF— 0.52 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns
Forward Voltage (IF = 1.0 mAdc) VF— 0.29 0.32 Vdc
Forward Voltage (IF = 10 mAdc) VF— 0.35 0.40 Vdc
Forward Current (DC) IF— — 200 mAdc
Repetitive Peak Forward Current IFRM — — 300 mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc
BAT54T1
3Motorola Small–Signal Transistors, FETs and Diodes Device Data
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820
Ω
0.1
µ
F
DUT
VR
100
µ
H0.1
µ
F
50
Ω
OUTPUT
PULSE
GENERATOR
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0 0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85
°
C
10
0VR, REVERSE VOLT AGE (VOLTS)
1.0
0.1
0.01
0.001 510152025
14
0VR, REVERSE VOLT AGE (VOLTS)
12
4
2
0
CT, TOTAL CAPACITANCE (pF)
51015 30
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
–40
°
C
25
°
C
TA = 150
°
C
TA = 125
°
C
TA = 85
°
C
TA = 25
°
C
IR, REVERSE CURRENT (
µ
A)
0.6
–55
°
C
150
°
C
125
°
C
100
1000
30
2520
6
8
10
BAT54T1
4Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOD–123
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
mm
inches
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
SOD–123 POWER DISSIPATION
The power dissipation of the SOD–123 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOD–123
package, PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOD–123 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOD–123 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
BAT54T1
5Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 425–04
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
ÂÂÂÂ
ÂÂÂÂ
B
D
K
AC
E
J
1
2
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.055 0.071 1.40 1.80
B0.100 0.112 2.55 2.85
C0.037 0.053 0.95 1.35
D0.020 0.028 0.50 0.70
E0.004 ––– 0.25 –––
H0.000 0.004 0.00 0.10
J––– 0.006 ––– 0.15
K0.140 0.152 3.55 3.85
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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BAT54T1/D
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