SIEMENS BCR 112 NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, Griver circuit * Built in bias resistor (Ry=4.7kQ, Ro=4.7k22) PS05161 aaeries Type Marking |Ordering Code | Pin Configuration Package BCR 112 WFs Q62702-C2254 1=B {2 =E 3=C SOT-23 Maximum Ratings Parameter Symbol} Values Unit Collector-emitter voltage VoEo 50 Vv Collector-base voltage Vepo 50 Emitter-base voltage Veso 10 input on Voltage Viton) 15 DC collector current Io 100 mA Total power dissipation, Ts = 102C Prot 200 mw Junction temperature Tj 150 C Storage temperature Tetg - 65... + 150 Thermal Resistance Junction ambient 7 Fino $350 K/w Junction - soldering point Rings $240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6om? Cu Semiconductor Group 591 11.96 SIEMENS BCR 112 Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage ViprycEO Vv lo = 100 pA, fg = 0 50 - . Collector-base breakdown voltage ViarycBo Io = 10 UA, Ig =0 50 - - Collector cutoff current Icpo nA Vop = 40 V, fg = 0 - - 100 Emitter cutoff current leEBo mA Veg = 10V, ig =O - - 1.61 DC current gain hee - Ilo =5MA, Vee =5V 20 - - Collector-emitter saturation voltage 1) VoEsat Vv lo = 10 MA, ig = 0.5 mA - - 0.3 Input off voltage Vicott) Io = 100 PA, Vog = 5 V 0.8 - 1.5 Input on Voltage Vion) lo =2 MA, Vog = 0.3 V 1 - 2.5 Input resistor Ay 3.2 4.7 6.2 kQ Resistor ratio Aiy/Re 0.9 1.1 - AC Characteristics Transition frequency fy MHz Ig = 10 MA, Vog = 5 V, f= 100 MHz - 140 - Collector-base capacitance Cob pF Vop = 10 V, f=1 MHz - 3 - 1) Pulse test: t < 300s; D < 2% Semiconductor Group 592 11.96 SIEMENS BCR 112 DC Current Gain here = f (Ic) Vcr = 5V (common emitter configuration) 103 0 1071 10 10 10 10 mA Input on Voltage Vion) = A/c) Voce = 0.3V (common emitter configuration) 103 101 10 10" 10 Vion Semiconductor Group Collector-Emitter Saturation Voltage Voesat = Alc), Are = 20 10? 103 0.0 0.1 0.2 0.3 v 0.5 _r Voeeat Input off voltage Vigotn, = A/c) Voge = 5V (common emitter configuration) te Vion 11.96 SIEMENS BCR 112 Total power dissipation P,.; = f (7; Ts) * Package mounted on epoxy mw oA . \\ \ 0 20 40 60 80 100 120 C 150 wm Ty Ts Permissible Pulse Load Ainis = At) 10 10" Ana 10 10 107% 10 s 10 Semiconductor Group Permissible Pulse Load Protmax / Ptotoc = Af) ar I Hs 594 11.96