(INTERSIL FOR VHF AMPLIFIER OSCILLATOR MIXER APPLICATIONS Noise Figure < 2.5 dB at 100 MHz *@ Low Capacitance Transconductance up to 6500 umho ABSOLUTE MAXIMUM RATINGS (25C) Gate-Source Voltage Gate-Drain Voitage Gate Current Total Device Dissipation at (or below) 25C Free-Air Temperature Storage Temperature Range Lead Temperature 1/16" From Case to 10 Sec ELECTRICAL CHARACTERISTICS (25C) 300 mW 2N3823 N-Channel JFET PIN CHIP CONFIGURATION TOPOGRAPHY 10-72 oo3s 5000 9025 mes <a 8 0038 | 9035 on LT 28 02s ola wal Le C oes f- NOTE SUBSTRATE D cos ORDERING INFORMATION DICE 2N3823/D 10-72 2N3823 WAFER 2N3823/W CHARACTERISTIC MIN | MAX UNIT TEST CONDITIONS 0.5 nA P " Vas = ~20V, Vos = 0 lass Gate Reverse Current 0.5 pA Gs os 150C BVess_ _Gate-Source Breakdown Voitage ~30 Iq = 1 pA, Vos = 0 Vesiotf) Gate-Source Cutoff Voltage -8 Vv Vos = 15V, Ip = 0.5 nA Vas Gate-Source Voltage -1.0 75 Vos = 15V, Ip = 400 wA loss Saturation Drain Current 4 20 mA Vos = 15V, Vas = 0 (Note 3) Gfs Common-Source Forward 3,500 | 6,500 f= 1 kHz (Note 1) Transconductance Ivts| Common-Source Forward 3,200 f= 100 MHz Transadmittance Qos Common-Source Output 35 umho f= 1 kHz (Note 1) Transconductance Qiss Common-Source Input 800 Vos = 15V, Ves = 0 Conductance _s Goss Common-Source Output 200 f= 260 MHz Conductance Ciss Common-Source Input 6 Capacitance Crss Common-Source Reverse 2 pF f= 1 MHz Transfer Capacitance NF i i . = = Noise Figure 2.5 dB Vos 15V, Vas =0 f = 100 MHz Re =1k0Q NOTE 1: These parameters are measured during a 2 msec interval 100 msec after d-c power is applied.