MBR1030 MBR1050
Document number: DS23009 Rev. 11 - 4
1 of 4
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June 2015
© Diodes Incorporated
MBR1030 MBR1050
OBSOL ETE PA RT DI S CONT INU E D
10A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Mechanical Data
Case: TO-220AC
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Tin. Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 2.24 grams (approximate)
Ordering Information (Note 3)
Part Number
Packaging
MBR10xx*
50/Tube
* xx = Device type, e.g. MBR1045
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pb
MBR10xx = Product Type Marking Code
AB = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 13 = 2013)
WW = Week (01 - 53)
MBR10xx
YYWW AB
Package Pin Out
Configuration
Base
Cathode
Cathode Anode
1 3
1
PART OBSOLETE
MBR1030 MBR1050
Document number: DS23009 Rev. 11 - 4
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June 2015
© Diodes Incorporated
MBR1030 MBR1050
OBSOL ETE PA RT DI S CONT INU E D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
1030
MBR
1035
MBR
1045
MBR
1050
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 7)
VRRM
VRWM
VR
30
35
45
50
V
RMS Reverse Voltage
VR(RMS)
21
24.5
31.5
35
V
Average Rectified Output Current
(Note 4) @TC = +125°C
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Thermal Characteristics
Characteristic
Symbol
MBR
1030
MBR
1035
MBR
1045
MBR
1050
Unit
Typical Thermal Resistance Junction to Case (Note 5)
RθJC
2.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
MBR
1030
MBR
1035
MBR
1045
MBR
1050
Unit
Forward Voltage Drop @ IF = 10A, TC = +25°C
@ IF = 10A, TC = +125°C
VFM
0.84
0.57
0.95
0.70
V
Peak Reverse Current @TC = +25°C
at Rated DC Blocking Voltage (Note 7) @TC = +125°C
IRM
0.1
15
0.1
25
mA
Typical Total Capacitance (Note 5)
CT
400
pF
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. RoHS revision 13.2.2003. High temperature solder exemptions applied, see EU Directive Annex Note 7.
7. Short duration pulse test used to minimize self-heating effect.
0
2
4
6
8
10
050 100 150
I , AVERAGE FORWARD CURRENT (A)
(AV)
T , CASE TEMPERATURE ( C)
Figure 1 Forward Current Derating Curve
C°
0.1
1.0
10
50
0.2 0.4 1.0
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
F
MBR1030 - MBR1045
MBR1050 / MBR1060
MBR1030 MBR1050
Document number: DS23009 Rev. 11 - 4
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June 2015
© Diodes Incorporated
MBR1030 MBR1050
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0
50
100
150
200
250
300
110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Figure 3 Max Non-Repetitive Surge Current
100
1,000
0.1 1.0 10 100
C , CAPACITANCE (pF)
TTOTAL
V , DC REVERSE VOLTAGE (V)
Figure 4 Typical Total Capacitance
R
T = 25 C
f = 1.0MHz
J°
0.001
0.01
0.1
1.0
10
020 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Figure 5 Typical Reverse Characteristics
T = 125 C°
J
T = 75 C
J°
T = 25 C°
J
TO220AC
Dim
Min
Typ
Max
A
3.56
-
4.82
A1
0.51
-
1.39
A2
2.04
-
2.92
b
0.39
0.81
1.01
b2
1.15
1.24
1.77
c
0.356
-
0.61
D
14.22
-
16.51
D1
8.39
-
9.01
e1
5.08
E
9.66
-
10.66
H1
5.85
-
6.85
L
12.70
-
14.73
L1
-
-
6.35
P
3.54
-
4.08
Q
2.54
-
3.42
All Dimensions in mm
AA1
c
D
E
L
b
e1
b2
P
H1
Q
L1
A2
SEATING PLANE
D1
MBR1030 MBR1050
Document number: DS23009 Rev. 11 - 4
4 of 4
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June 2015
© Diodes Incorporated
MBR1030 MBR1050
OBSOL ETE PA RT DI S CONT INU E D
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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