
MSC4001
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DESCRIPTION:DESCRIPTION:
The MSC4001 common-base, hermetically sealed silicon NPN
microwave power transistor features a unique Microgrid
structure and can withstand 3:1 VSWR at any phase angle under
rated conditions. It is designed for Class C amplifier applications
in the 2.0 – 4.4 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (TABSOLUTE MAXIMUM RATINGS (TCASECASE = 25 = 25°°C)C)
Symbol Parameter Value Unit
PDISS Power Dissipation* 7.0 W
IC Device Current* 0.25 A
VCC Collector Supply Voltage* 30 V
TJ Junction Temperature (Pulsed RF Operation) +200 °°C
TSTG Storage Temperature -65 to +200 °°C
THERMAL DATATHERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance* 25 °°C/W
*Applies only to rated RF amplifier operation
FeaturesFeatures
• 3:1 VSWR AT RATED CONDITIONS
• HERMETIC STRIPAC PACKAGE
• POUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz
RF AND MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855