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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BSS138L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Description * High Density Cell Design for Low RDS(ON) * Rugged and Reliable * Compact Industry Standard SOT-23 Surface Mount Package * Very Low Capacitance * Fast Switching Speed This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply and switching applications. D D S G SOT-23 G S Ordering Information Part Number Marking Package Packing Method BSS138L SL SOT-23 3L Tape and Reel (c) 2014 Fairchild Semiconductor Corporation BSS138L Rev. 1.0.1 www.fairchildsemi.com 1 BSS138L -- N-Channel Logic Level Enhancement Mode Field Effect Transistor October 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VDSS Drain-Source Voltage 50 V VGSS Gate-Source Voltage 20 V ID TJ, TSTG TL Maximum Drain Current Continuous 0.20 Pulsed 0.80 A -55 to +150 C 300 C Value Unit 0.35 W Derate Above 25C 2.8 mW/C Thermal Resistance, Junction-to-Ambient(1) 380 C/W Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16 inch from Case for 10 Seconds Thermal Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter (1) PD RJA Maximum Power Dissipation Note: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 380C/W when mounted on a minimum pad. Scale 1: 1 on letter size paper ESD Rating(2) Symbol Parameter Value HBM Human Body Model per ANSI/ESDA/JEDEC JS-001-2012 CDM Charged Device Model per JEDEC C101C Unit 50 V >2000 Note: 2. ESD values are in typical, no over-voltage rating is implied, ESD CDM zap voltage is 2000 V maximum. (c) 2014 Fairchild Semiconductor Corporation BSS138L Rev. 1.0.1 www.fairchildsemi.com 2 BSS138L -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Absolute Maximum Ratings Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 50.0 65.4 V 58 mV/C Off Characteristics BVDSS BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C VDS = 50 V, VGS = 0 V 0.263 500 nA Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V, TJ = 125C 0.109 5 A VDS = 30 V, VGS = 0 V 0.062 100 nA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 0.058 100 IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -0.06 -100 1.25 1.50 nA On Characteristics(3) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VGS(th) TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25C RDS(ON) Static Drain-Source On-Resistance VGS = 5 V, ID = 0.20 A 2.78 3.50 VGS = 2.75 V, ID = 0.20 A 3.78 10 On-State Drain Current VGS = 10 V, VDS = 5 V 0.20 0.67 A Forward Transconductance VDS = 10 V, ID = 0.22 A 0.12 0.35 S ID(ON) gFS 0.80 -2.42 V mV/C Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics(3) td(on) Turn-On Delay tr td(off) Turn-On Rise Time Turn-Off Delay tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 15 V, VGS = 1.0 MHz VDD = 30 V, ID = 0.29 A, VGS = 10 V VDS = 25 V, ID = 0.22 A, VGS = 10 V, IG = 0.1 mA 12.2 50 pF 3.04 25 pF 1.43 5 pF 26.6 2.2 5 ns 1.8 18 ns 5.3 36 ns 5.1 14 ns 0.549 2.4 nC 0.075 nC 0.117 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 115 mA 0.93 0.22 A 1.4 V Note: 3. Pulse test: pulse width 300 s, duty cycle 2.0%. (c) 2014 Fairchild Semiconductor Corporation BSS138L Rev. 1.0.1 www.fairchildsemi.com 3 BSS138L -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Electrical Characteristics 3.0 ID, DRAIN CURRENT (A) 0.8 RDS(ON), NORMALIZED DRAIN-SOUCE ON-RESISTANCE 1.0 6.0 VGS=10V 4.5 0.6 3.5 3.0 0.4 2.5 0.2 2.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS=2.5V 2.6 3.0 3.5 2.2 4.5 6.0 1.8 10 1.4 1.0 5.0 0 0.2 VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOUCE ON-RESISTANCE ID = 0.11 A 7.5 1.7 1.5 1.3 1.1 0.9 0.7 7 6.5 6 5.5 5 4.5 TJ = 125oC 4 3.5 3 2.5 TJ = 25oC 2 1.5 0.5 -75 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 1 150 Figure 3. On-Resistance Variation with Temperature 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1 VDS = 10 V 0.9 IS, REVERSE DRAIN CURRENT (A) 1.0 ID, DRAIN CURRENT (A) 1 8 ID = 0.22A VGS = 10V 1.9 0.8 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current Figure 1. On-Region Characteristics 2.1 0.4 0.6 ID, DRAIN CURRENT (A) TJ = 125oC 0.8 0.7 0.6 -55oC 0.5 25oC 0.4 0.3 0.2 VGS = 0V 0.1 TJ= 125oC 25oC -55oC 0.01 0.1 0.0 0 1 2 3 4 5 6 0.001 7 0.2 VGS, GATE TO SOURCE VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics (c) 2014 Fairchild Semiconductor Corporation BSS138L Rev. 1.0.1 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com 4 BSS138L -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics VDS= 25V Ciss 8 VDS= 8V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 VDS= 30V 6 4 10 Coss Crss 2 f = 1MHz VGS = 0V 0 0 0.2 0.4 1 0.01 0.6 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 8. Capacitance Characteristics 1 PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 100 s 0.2 RDS(ON) LIMIT 1ms SINGLE PULSE RJA = 380oC/W TA = 25oC 0.02 10ms 100ms 1s 10s DC 10 1 SINGLE PULSE R JA = 380oC/W TA = 25oC 0.1 0.0001 0.002 0.01 0.1 1 10 100 0.001 0.01 0.1 200 1 10 100 1000 t1 (s) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Maximum Safe Operating Area TRANSIENT THERMAL IMPEDANCE Normalized Thermal Impedance ZoJA 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t, Rectangular Pulse Duration Figure 11. Transient Thermal Response Curve. (c) 2014 Fairchild Semiconductor Corporation BSS138L Rev. 1.0.1 www.fairchildsemi.com 5 BSS138L -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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