IRF7342TRPBF - INTERNATIONAL RECTIFIER

IRF7342PbF

VDSS -55V

RDS(on) max. 0.105

ID -3.4A

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized lead frame for

enhanced thermal characteristics and multiple-die capability making it

ideal in a variety of power applications. With these improvements,

multiple devices can be used in an application with dramatically

reduced board space. The package is designed for vapor phase, infra

red, or wave soldering techniques. Power dissipation of greater than

0.8W is possible in a typical PCB mount application.

 Generation V Technology

 Ultra Low On-Resistance

 Dual P Channel MOSFET

 Surface Mount

 Available in Tape & Reel

 Dynamic dv/dt Rating

 Fast Switching

 Lead-Free

1 2016-5-26



Symbol Parameter Max. Units

VDS Drain-Source Voltage -55 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4

A 

ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7

IDM Pulsed Drain Current  -27

PD @TA = 25°C Maximum Power Dissipation 2.0 W 

PD @TA = 70°C Maximum Power Dissipation 1.3

Linear De rating Factor 0.016 mW°/C

VGS Gate-to-Source Voltage ± 20 V

VGSM Gate-to-Source Voltage Single Pulse tp < 10µs 30

EAS Single Pulse Avalanche Energy (Thermally Limited)  114

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

TJ Operating Junction and -55 to + 150 °C

TSTG Storage Temperature Range

Absolute Maximum Ratings

Thermal Resistance 

Symbol Parameter Typ. Max. Units

°C/W

RJA Junction-to-Ambient  ––– 62.5

SO-8

IRF7342PbF

Base part number Package Type Standard Pack Orderable Part Number

Form Quantity

IRF7342PbF SO-8 Tape and Reel 4000 IRF7342PbF

G D S

Gate Drain Source

Top View

HEXFET® Power MOSFET

IRF7342PbF

2 2016-5-26

Notes:

 Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)

 Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8)

ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ  150°C.

 Pulse width 300µs; duty cycle  2%.

 When mounted on 1" square copper board , t 10sec.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA

RDS(on) Static Drain-to-Source On-Resistance ––– 0.095 0.105  VGS = -10V, ID = -3.4A 

––– 0.150 0.170 VGS = -4.5V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA

gfs Forward Trans conductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A

IDSS Drain-to-Source Leakage Current ––– ––– -2.0 µA VDS = -55V, VGS = 0V

––– ––– -25 VDS = -55V,VGS = 0V,TJ =55°C

IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

Qg Total Gate Charge ––– 26 38

nC 

ID = -3.1A

Qgs Gate-to-Source Charge ––– 3.0 4.5 VDS = -44V

Qgd Gate-to-Drain (‘Miller’) Charge ––– 8.4 13 VGS = -10V, See Fig.10 

td(on) Turn-On Delay Time ––– 14 22

VDD = -28V

tr Rise Time ––– 10 15 ID = -1.0A

td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0

tf Fall Time ––– 22 32 RD = 16

Ciss Input Capacitance ––– 690 –––

pF 

VGS = 0V

Coss Output Capacitance ––– 210 ––– VDS = -25V

Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig.9

Diode Characteristics 

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current ––– ––– -2.0

MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– -27 integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C,IS = -2.0A,VGS = 0V 

trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C ,IF = -2.0A,

Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs 

IRF7342PbF

3 2016-5-26

Fig. 2 Typical Output Characteristics

Fig. 3 Typical Transfer Characteristics

Fig. 1 Typical Output Characteristics

Fig. 4 Typical Source-Drain Diode

Forward Voltage

0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

100

34567

V = -25V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

IRF7342PbF

4 2016-5-26

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain

Current



Fig 8. Maximum Avalanche Energy

Fig. 7 Typical On-Resistance Vs. Gate Voltage

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-3.4 A

0 2 4 6 8 10 12

0.080

0.120

0.160

0.200

0.240

R , Drain-to-Source On Resistance

-I , Drain Current (A)

DS (on)

VGS = -4.5V

VGS = -10V



0.05

0.15

0.25

0.35

0.45

2581114

-V , Gate-to-Source Voltage (V)

I = -3.4 A

25 50 75 100 125 150

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

IRF7342PbF

5 2016-5-26

Fig. 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

1 10 100

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

iss

oss

rss

010 20 30 40

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-3.1A

V =-12V

V =-30V

V =-48V

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF7342PbF

6 2016-5-26



SO-8 Part Marking Information

SO-8 Package Outline (Dimensions are shown in millimeters (inches)

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSIN C H ES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C AB

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

N O TES:

1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.

2. CONTROLLING DIM ENSION: MILLIMETER

3. DIM ENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].

5 DIM ENSIO N D O ES N O T IN C LU D E M O LD PRO TRU SIO NS.

6 DIM ENSIO N D O ES N O T IN C LU D E M O LD PRO TRU SIO NS.

M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].

7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO

A S U B S T R A T E .

M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].

8X 1.78 [.070]

DATE CODE (YWW)

XXXX

IN TE R N A TIO N A L

RECTIFIER

LOGO

F7101

Y = LAST D IG IT O F TH E YEAR

PART NUM BER

LOT CODE

WW = WEEK

EXAM PLE: THIS IS AN IRF7101 (M OSFET)

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

A = ASSEM BLY SITE CODE

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

IRF7342PbF

7 2016-5-26

SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

IRF7342PbF

8 2016-5-26

Revision History

Date Comments

05/26/2016  Updated datasheet with corporate template

 Added disclaimer on last page.

Qualification Information† 

Qualification Level

Moisture Sensitivity Level SO-8 MSL1

(per JEDEC J-STD-020D)††

RoHS Compliant Yes

Consumer

† Qualification standards can be found at Inﬁneon’swebsitewww.inﬁneon.com

†† Applicable version of JEDEC standard at the time of product release.

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