IRF7342PbF HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS RDS(on) max. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Base part number Package Type IRF7342PbF SO-8 Absolute Maximum Ratings Symbol 0.105 -3.4A ID Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. -55V SO-8 IRF7342PbF G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number IRF7342PbF Max. Units VDS Drain-Source Voltage -55 V ID @ TA = 25C Continuous Drain Current, VGS @ -10V -3.4 ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation -2.7 -27 2.0 PD @TA = 70C Maximum Power Dissipation Linear De rating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp < 10s Single Pulse Avalanche Energy (Thermally Limited) Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range VGS VGSM EAS dv/dt TJ TSTG Thermal Resistance Symbol RJA 1 Parameter Parameter Junction-to-Ambient A 1.3 0.016 20 30 114 5.0 -55 to + 150 W mW/C V mJ V/ns C Typ. Max. Units --- 62.5 C/W 2016-5-26 IRF7342PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Reverse Recovery Charge Qrr Min. Typ. Max. Units Conditions -55 --- --- V VGS = 0V, ID = -250A --- -0.054 --- V/C Reference to 25C, ID = -1mA --- 0.095 0.105 VGS = -10V, ID = -3.4A --- 0.150 0.170 VGS = -4.5V, ID = -2.7A -1.0 --- --- V VDS = VGS, ID = -250A 3.3 --- --- S VDS = -10V, ID = -3.1A --- --- -2.0 VDS = -55V, VGS = 0V A --- --- -25 VDS = -55V,VGS = 0V,TJ =55C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V --- 26 38 ID = -3.1A --- 3.0 4.5 nC VDS = -44V VGS = -10V, See Fig.10 --- 8.4 13 --- 14 22 VDD = -28V --- 10 15 ID = -1.0A ns --- 43 64 RG = 6.0 --- 22 32 RD = 16 --- 690 --- VGS = 0V pF VDS = -25V --- 210 --- = 1.0MHz, See Fig.9 --- 86 --- Min. Typ. Max. Units Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -2.0A,VGS = 0V ns TJ = 25C ,IF = -2.0A, nC di/dt = 100A/s --- --- -2.0 --- --- -27 --- --- --- --- 54 85 -1.2 80 130 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8) ISD -3.4A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. When mounted on 1" square copper board , t 10sec. 2 2016-5-26 IRF7342PbF 100 VGS TOP -15V -12V -10V -8.0V -6.0V -4.0V -3.5V BOTTOM -3.0V 10 VGS -15V -12V -10V -8.0V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 -3.0V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 -3.0V 1 0.1 0.1 100 100 100 -ISD , Reverse Drain Current (A) 100 -I D , Drain-to-Source Current (A) 10 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics TJ = 25 C TJ = 150 C 10 V DS = -25V 20s PULSE WIDTH 3 4 5 6 -VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH TJ = 150 C 7 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VSD ,Source-to-Drain Voltage (V) Fig. 4 Typical Source-Drain Diode Forward Voltage 2016-5-26 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = -3.4 A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 R DS (on), Drain-to-Source On Resistance IRF7342PbF 0.240 0.200 VGS = -4.5V 0.160 0.120 VGS = -10V 0.080 0 2 4 6 8 10 12 -I D , Drain Current (A) TJ , Junction Temperature( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.45 EAS , Single Pulse Avalanche Energy (mJ) 300 0.35 0.25 I D = -3.4 A 0.15 0.05 2 5 8 11 14 A ID -1.5A -2.7A BOTTOM -3.4A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting T J, Junction Temperature 150 ( C) -V GS , Gate-to-Source Voltage (V) Fig. 7 Typical On-Resistance Vs. Gate Voltage 4 Fig 8. Maximum Avalanche Energy 2016-5-26 IRF7342PbF 1200 -VGS , Gate-to-Source Voltage (V) 960 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 720 480 Coss 240 Crss 0 1 10 VDS =-48V VDS =-30V VDS =-12V 16 12 8 4 0 100 ID = -3.1A 0 10 20 30 40 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig. 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2016-5-26 IRF7342PbF SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] 8X L 8X c 7 B F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information E X A M P L E : T H IS IS A N IR F 7 1 0 1 (M O S F E T ) IN T E R N A T IO N A L R E C T IF IE R LO G O XXXX F7101 D A T E C O D E (Y W W ) P = D E S IG N A T E S L E A D -F R E E P R O D U C T (O P T IO N A L ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK A = A S S E M B L Y S IT E C O D E LO T C O D E PART N U M BER Note: For the most current drawing please refer to Infineon's web site www.infineon.com 6 2016-5-26 IRF7342PbF SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to Infineon's web site www.infineon.com 7 2016-5-26 IRF7342PbF Qualification Information Consumer Qualification Level Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D) SO-8 Yes RoHS Compliant Qualification standards can be found at Infineon's web site www.infineon.com Applicable version of JEDEC standard at the time of product release. Revision History Date 05/26/2016 Comments Updated datasheet with corporate template Added disclaimer on last page. Trademarks of Infineon Technologies AG HVICTM, IPMTM, PFCTM, AUConvertIRTM, AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolDPTM, CoolGaNTM, COOLiRTM, CoolMOSTM, CoolSETTM, CoolSiCTM, DAVETM, DIPOLTM, DirectFETTM, DrBladeTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, GaNpowIRTM, HEXFETTM, HITFETTM, HybridPACKTM, iMOTIONTM, IRAMTM, ISOFACETM, IsoPACKTM, LEDrivIRTM, LITIXTM, MIPAQTM, ModSTACKTM, mydTM, NovalithICTM, OPTIGATM, Op MOSTM, ORIGATM, PowIRaudioTM, PowIRStageTM, PrimePACKTM, PrimeSTACKTM, PROFETTM, PROSILTM, RASICTM, REAL3TM, SmartLEWISTM, SOLID FLASHTM, SPOCTM, StrongIRFETTM, SupIRBuckTM, TEMPFETTM, TRENCHSTOPTM, TriCoreTM, UHVICTM, XHPTM, XMCTM Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respec ve owners. Edi on 20160419 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2016 Infineon Technologies AG. All Rights Reserved. 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