Vishay Siliconix
SUD50P06-15L
Document Number: 72250
S10-2545-Rev. C, 08-Nov-10
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1
P-Channel 60 V (D-S), 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A)
- 60 0.015 at VGS = - 10 V - 50d
0.020 at VGS = - 4.5 V - 50
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information: SUD50P06-15L-E3 (Lead-(Pb)-free)
S
G
D
P-Channel MOSFET
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID
- 50d
A
TC = 125 °C - 39
Pulsed Drain Current IDM - 80
Avalanche Current IAR - 50
Repetitive Avalanche EnergyaL = 0.1 mH EAR 125 mJ
Power Dissipation TC = 25 °C PD
136c
W
TA = 25 °C 3b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambientbt 10 s RthJA
15 18
°C/W
Steady State 40 50
Junction-to-Case RthJC 0.82 1.1
RoHS
COMPLIANT
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Document Number: 72250
S10-2545-Rev. C, 08-Nov-10
Vishay Siliconix
SUD50P06-15L
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functional opera tion
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 48 V, VGS = 0 V - 1
µA
VDS = - 48 V, VGS = 0 V, TJ = 125 °C - 50
VDS = - 48 V, VGS = 0 V, TJ = 175 °C - 150
On-State Drain CurrentaID(on) V
DS = -5 V, VGS = - 10 V - 50 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 17 A 0.012 0.015
VGS = - 10 V, ID = - 50 A, TJ = 125 °C 0.025
VGS = - 10 V, ID = - 50 A, TJ = 175 °C 0.030
VGS = - 4.5 V, ID = - 14 A 0.020
Forward Transconductanceagfs VDS = - 15 V, ID = - 17 A 61 S
Dynamicb
Input Capacitance Ciss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
4950
pFOutput Capacitance Coss 480
Reverse Transfer Capacitance Crss 405
Total Gate ChargecQg
VDS = - 30 V, VGS = - 10 V, ID = - 50 A
110 165
nC
Gate-Source ChargecQgs 19
Gate-Drain ChargecQgd 28
Tur n - O n D e l ay Timectd(on)
VDD = - 30 V, RL = 0.6
ID - 50 A, VGEN = - 10 V, RG = 6
15 23
ns
Rise Timectr70 105
Turn-Off Delay Timectd(off) 175 260
Fall Timectf175 260
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
Continuous Current IS- 50 A
Pulsed Current ISM - 80
Forward VoltageaVSD IF = - 50 A, VGS = 0 V 1.0 1.6 V
Reverse Recovery Time trr IF = - 50 A, dI/dt = 100 A/µs 45 70 ns
Document Number: 72250
S10-2545-Rev. C, 08-Nov-10
www.vishay.com
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Vishay Siliconix
SUD50P06-15L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
3 V
0
10
20
30
40
50
60
70
80
012345
VGS = 10 V thru 4 V
0
20
40
60
80
100
0 102030405060
VGS - Gate-to-Source Voltage (V)
- Transconductance (S)gfs
TC = - 55 °C 25 °C
125 °C
0
1000
2000
3000
4000
5000
6000
7000
8000
0 102030405060
VDS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
Ciss
Coss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
25 °C
- 55 °C
TC = 125 °C
0.000
0.005
0.010
0.015
0.020
0.025
0 1020304050607080
- On-Resistance ()
ID
- Drain Current (A)
RDS(on)
VGS = 10 V
VGS = 4.5 V
0
2
4
6
8
10
0 20 40 60 80 100 120
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 30 V
I
D
= 50 A
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Document Number: 72250
S10-2545-Rev. C, 08-Nov-10
Vishay Siliconix
SUD50P06-15L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72250.
On-Resistance vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150 175
(Normalized)
- On-Resistance
TJ
- Junction Temperature (°C)
RDS(on)
VGS = 10 V
ID = 17 A
Source-Drain Diode Forward Voltage
0.0 0.3 0.6 0.9 1.2 1.5
VSD
- Source-to-Drain Voltage (V)
- Source Current (A)IS
100
10
1
TJ = 25 °C
TJ = 150 °C
Maximum Avalanche and Drain Current
vs. Case Temperature
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
- Drain Current (A)ID
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
0.05
Duty Cycle = 0.5
Single Pulse
0.02
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Revision: 12-Mar-12 1Document Number: 91000
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