SUD50P06-15L Vishay Siliconix P-Channel 60 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V - 50 * TrenchFET(R) Power MOSFET * 175 C Junction Temperature * Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P06-15L-E3 (Lead-(Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 C) TC = 25 C TC = 125 C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Power Dissipation L = 0.1 mH TC = 25 C TA = 25 C V - 50d ID - 39 IDM - 80 IAR - 50 EAR 125 A mJ c 136 PD W 3b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t 10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.82 1.1 Unit C/W Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 www.vishay.com 1 SUD50P06-15L Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 A - 60 VGS(th) VDS = VGS, ID = - 250 A -1 IGSS VDS = 0 V, VGS = 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS -1 VDS = - 48 V, VGS = 0 V, TJ = 125 C - 50 VDS = - 48 V, VGS = 0 V, TJ = 175 C - 150 ID(on) Forward Transconductancea RDS(on) 100 VDS = - 48 V, VGS = 0 V VDS = -5 V, VGS = - 10 V VGS = - 10 V, ID = - 17 A Drain-Source On-State Resistancea -3 - 50 A 0.015 0.025 VGS = - 10 V, ID = - 50 A, TJ = 175 C 0.030 VGS = - 4.5 V, ID = - 14 A 0.020 VDS = - 15 V, ID = - 17 A nA A 0.012 VGS = - 10 V, ID = - 50 A, TJ = 125 C gfs V 61 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 4950 VGS = 0 V, VDS = - 25 V, f = 1 MHz 480 pF 405 110 VDS = - 30 V, VGS = - 10 V, ID = - 50 A 165 nC 19 Gate-Drain Charge Qgd 28 Turn-On Delay Timec td(on) 15 23 70 105 175 260 175 260 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDD = - 30 V, RL = 0.6 ID - 50 A, VGEN = - 10 V, RG = 6 tf Source-Drain Diode Ratings and Characteristics (TC = 25 ns C)b IS - 50 Pulsed Current ISM - 80 Forward Voltagea VSD IF = - 50 A, VGS = 0 V 1.0 1.6 V trr IF = - 50 A, dI/dt = 100 A/s 45 70 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 SUD50P06-15L Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 80 80 VGS = 10 V thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 C 20 25 C 10 10 - 55 C 0 0.0 0 0 1 2 3 4 5 0.5 Output Characteristics 2.0 2.5 3.0 3.5 4.0 70 80 0.025 R DS(on) - On-Resistance () 25 C TC = - 55 C 80 125 C 60 40 20 0 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 60 0 10 20 VGS - Gate-to-Source Voltage (V) 30 40 50 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 8000 VGS - Gate-to-Source Voltage (V) 7000 6000 C - Capacitance (pF) 1.5 Transfer Characteristics 100 g fs - Transconductance (S) 1.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 5000 4000 3000 2000 VDS = 30 V ID = 50 A 8 6 4 2 Coss 1000 Crss 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 50 60 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD50P06-15L Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 100 2.0 VGS = 10 V ID = 17 A I S - Source Current (A) 1.6 (Normalized) R DS(on) - On-Resistance 1.8 1.4 1.2 1.0 TJ = 150 C TJ = 25 C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 0.0 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature 1.5 Source-Drain Diode Forward Voltage THERMAL RATINGS 100 60 IDM Limited Limited by R DS(on)* 50 I D - Drain Current (A) I D - Drain Current (A) P(t) = 0.0001 40 30 20 ID(on) Limited 10 P(t) = 0.001 TC = 25 C Single Pulse P(t) = 0.01 10 1 0.1 0 0 25 50 75 100 125 150 TC - Case Temperature (C) 175 P(t) = 0.1 BVDSS Limited P(t) = 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72250. www.vishay.com 4 Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000