To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SK1400, 2SK1400A Silicon N-Channel MOS FET ADE-208-1280 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1400 Symbol Ratings Unit VDSS 300 V 2SK1400A 350 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 30 V 7 A 28 A 7 A Channel dissipation Pch* 50 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK1400, 2SK1400A Electrical Characteristics (Ta = 25C) Item Symbol Min Drain to source K1400 breakdown voltage K1400A V(BR)DSS Typ Max Unit Test conditions 300 -- -- V I D = 10 mA, VGS = 0 350 -- -- Gate to source breakdown voltage V(BR)GSS 30 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 25 V, V DS = 0 Zero gate voltage K1400 I DSS -- -- 250 A VDS = 240 V, VGS = 0 drain current K1400A VDS = 280 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 -- 3.0 V I D = 1 mA, VDS = 10 V Static drain to source K1400 RDS(on) -- 0.50 0.70 I D = 4 A, VGS = 10 V *1 -- 0.60 0.80 on state resistance K1400A Forward transfer admittance |yfs| 3.0 5.0 -- S I D = 4 A, VDS = 10 V *1 Input capacitance Ciss -- 635 -- pF VDS = 10 V, VGS = 0, Output capacitance Coss -- 230 -- pF f = 1 MHz Reverse transfer capacitance Crss -- 40 -- pF Turn-on delay time t d(on) -- 10 -- ns I D = 4 A, VGS = 10 V, Rise time tr -- 50 -- ns RL = 7.5 Turn-off delay time t d(off) -- 60 -- ns Fall time tf -- 40 -- ns Body to drain diode forward voltage VDF -- 1.0 -- V I F = 7 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 240 -- ns I F = 7 A, VGS = 0, diF/dt = 100 A/s Note: 1. Pulse test 3 2SK1400, 2SK1400A Maximum Safe Operation Area Power vs. Temperature Derating 50 DS 5 PW 0 = 1 10 n tio ra pe 2 1 0.5 s s m s m s (1 = (T C 20 (o n) O i s per lim ati ite on d in by th R is a 40 10 10 10 O Sh ot ) ) C 25 Drain Current ID (A) 20 C D Channel Dissipation Pch (W) re a 60 0.2 0.1 Ta = 25C 2SK1400 2SK1400A 0.05 0 50 100 Case Temperature TC (C) 1 150 Typical Output Characteristics 15 V Drain Current ID (A) 8 Pulse Test 8 5V 6 4 2 0 4 5.5 V 6V 10 V Typical Transfer Characteristics 10 Drain Current ID (A) 10 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) 4.5 V 4 12 16 8 Drain to Source Voltage VDS (V) 6 4 75C 2 4V VGS = 3.5 V 20 VDS = 20 V Pulse Test 0 Ta = 25C -25C 2 6 8 4 Gate to Source Voltage VGS (V) 10 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 ID = 10 A 6 4 5A 2 2A 0 4 8 12 16 Gate to Source Voltage VGS (V) 5 Pulse Test 2 1 0.2 0.1 Pulse Test VGS = 10 V 10 A 5A 2A 0.8 0.4 0 -40 0 40 80 120 Case Temperature TC (C) 1.0 10 2 5 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 2.0 1.2 15 V 0.5 Static Drain to Source on State Resistance vs. Temperature 1.6 VGS = 10 V 0.05 0.5 20 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 2SK1400, 2SK1400A 160 50 20 VDS = 20 V Pulse Test 10 -25C TC = 25C 5 75C 2 1 0.5 0.1 0.2 0.5 2 1 Drain Current ID (A) 5 10 5 2SK1400, 2SK1400A Static Drain-Source on State Resistance vs. Drain Current Body to Drain Diode Reverse Recovery Time 10,000 Ciss 200 Capacitance C (pF) Reverse Recovery Time t rr (ns) 500 100 50 20 1,000 Coss 100 Crss di/dt = 50 A/s, VGS = 0 Ta = 25C Pulse Test 10 5 0.2 VGS = 0 V f = 1 MHz 10 5 1 0.5 2 10 Reverse Drain Current IDR (A) 20 0 50 Switching Characteristics Dynamic Input Characteristics 500 10 30 40 20 Drain to Source Voltage VDS (V) 500 20 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% 200 16 12 VGS VDS 8 100 200 V 100 V VDD = 50 V 8 ID = 7 A 24 32 16 Gate Charge Qg (nc) 4 0 40 * Switching Time t (ns) 300 0 6 VDD = 50V 100 V 200 V 400 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) * 200 100 td (off) 50 tf tr 20 td (on) 10 5 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK1400, 2SK1400A Reverse Drain Current vs. Sourse to Drain Voltage Reverse Dratin Current IDR (A) 10 Pulse Test 8 6 4 2 5 V, 10 V VGS = 0, -5 V 0 Normalized Transient Thermal Impedance S (t) 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25C D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 2.50C/W, TC = 25C PDM 0.02 0.03 e 1 0.0 t Puls o h 1S 0.01 10 T 100 1m 10 m Pulse Width PW (s) 100 m Switching Time Test Circuit PW D = PW T 1 10 Waveforms Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Vin 10 V Vout VDD . =. 30 V 10% 10% 90% td (on) tr 10% 90% td (off) tf 7 2SK1400, 2SK1400A Package Dimensions As of January, 2001 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 3.6 -0.08 +0.1 1.26 0.15 15.0 0.3 6.4 18.5 0.5 1.27 +0.2 -0.1 8.0 4.44 0.2 7.8 0.5 1.5 MAX 0.76 0.1 2.54 0.5 2.54 0.5 14.0 0.5 2.7 MAX 0.5 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 TO-220AB Conforms Conforms 1.8 g 2SK1400, 2SK1400A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 9