LESHAN RADIO COMPANY, LTD.
LBC817_S-1/3
1
3
2
General Purpose Transistors
LBC817-16LT1
LBC817-25LT1
LBC817-40LT1
SOT–23
2
EMITTER
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V CEO 45 V
Collector–Base V oltage V CBO 50 V
Emitter–Base V oltage V EBO 5.0 V
Collector Current — Continuous I C500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D
TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 5 5 6 °C/W
Total Device Dissipation P D
Alumina Substrate, (2) TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
FEATURE
ƽCollector current capability IC = 500 mA.
ƽCollector-emitter voltage VCEO(max) = 45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device Marking Shipping
LBC817-16LT1 6A 3000/Tape&Reel
LBC817-16LT1G 6A
(Pb-Free) 3000/Tape&Reel
LBC817-25LT1 6B 3000/Tape&Reel
LBC817-25LT1G 6B
(Pb-Free) 3000/Tape&Reel
LBC817-40LT1 6C 3000/Tape&Reel
LBC817-40LT1G 6C
(Pb-Free) 3000/Tape&Reel
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN Silicon