DSA 9 Avalanche Diode VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Type A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 150C; 180 sine 18 11 A A PRSM TVJM, tp = 10 ms 4.5 kW IFSM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 250 265 A TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 220 A TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 310 295 A2s TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 190 A2s -40...+180 180 -40...+180 C C C 2.2...2.8 Nm 5 g 4.4 2.6 Characteristic Values max. VR = VRRM TVJ = TVJM 3 mA VF IF = 36 A TVJ = 25C 1.4 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 15 V mW RthJC RthJH DC current 180 sine DC current 2 2.17 3.0 K/W K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 2.0 2.0 100 mm mm m/s2 2 IR max. typ. 2 Conditions Dimensions in mm (1 mm = 0.0394") 4 Symbol * Space and weight savings * Simple mounting * Improved temperature & power cycling * Reduced protection circuits 4 typical Advantages 10.5 Weight * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Data according to IEC 60747 (c) 2011 IXYS All rights reserved 2.3 0.5 M5 SW 11 IXYS reserves the right to change limits, test conditions and dimensions. O2 0.5 mounting torque Applications 19.7 Md * International standard package JEDEC DO-203 AA * Planar passivated chips 0.8 TVJ TVJM Tstg Features 11.5 I2t Maximum Ratings 10.3 V(BR)min 7.8 VRSM VRRM = 1200-1800 V IF(RMS) = 18 A IFAVM = 11 A 20110114a 1-2 DSA 9 50 300 1000 A A 250 800 A2s typ. 40 lim. 50Hz, 80%VRRM IFSM IF 30 TVJ= 180C TVJ= 25C 600 TVJ = 45C TVJ = 180C 200 2 It 400 150 20 TVJ=45C 100 10 200 TVJ=180C 50 0 V 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF 0 10-3 Fig. 1 Forward characteristics 10-2 10-1 100 s t 101 Fig. 2 Surge overload current IFSM: crest value, t: duration 100 25 W A RthJA : 20 3 4 5 6 7 ms 8 910 t DC d = 180 sin d = 120 d= 60 d= 30 IF(AV)M 13 K/W (CU80x80) 18 K/W 15 2 20 8.3 K/W PF 1 Fig. 3 I2t versus time (1-10 ms) 25 15 10 10 DC 180 sin 120 60 30 5 0 VR = 0 V 0 5 10 15 IF(AV)M 5 A 20 00 50 0 50 100 150 Tamb Fig. 4 Power dissipation versus forward current and ambient temperature RthJH for various conduction angles d: 30 60 K/W 4 120 180 ZthJH 200 C 250 Tcase Fig. 5 Max. forward current at case temperature 5 DC 3 2 d RthJH (K/W) DC 180 120 60 30 3.0 3.35 3.56 4.0 4.64 Constants for ZthJH calculation: i 1 0 10-3 0 150 C 200 100 10-2 10-1 100 101 102 103 s t 104 1 2 3 4 Rthi (K/W) ti (s) 0.095 0.515 1.39 1.0 0.00032 0.0102 0.360 2.30 Fig. 6 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110114a 2-2